DE1521327A1 - Verfahren und Vorrichtung zum Herstellen von zaehen Ueberzuegen auf einer Obernaeche - Google Patents
Verfahren und Vorrichtung zum Herstellen von zaehen Ueberzuegen auf einer ObernaecheInfo
- Publication number
- DE1521327A1 DE1521327A1 DE19661521327 DE1521327A DE1521327A1 DE 1521327 A1 DE1521327 A1 DE 1521327A1 DE 19661521327 DE19661521327 DE 19661521327 DE 1521327 A DE1521327 A DE 1521327A DE 1521327 A1 DE1521327 A1 DE 1521327A1
- Authority
- DE
- Germany
- Prior art keywords
- target body
- path
- ions
- chamber
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 20
- 238000000576 coating method Methods 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000000463 material Substances 0.000 claims description 30
- 238000010884 ion-beam technique Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000011343 solid material Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 230000003472 neutralizing effect Effects 0.000 claims description 3
- 229910052755 nonmetal Inorganic materials 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000002826 coolant Substances 0.000 claims 1
- 229910052574 oxide ceramic Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- -1 argon ions Chemical class 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 235000012771 pancakes Nutrition 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/084—Ion implantation of compound devices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46436565A | 1965-06-16 | 1965-06-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1521327A1 true DE1521327A1 (de) | 1969-08-07 |
Family
ID=23843654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19661521327 Pending DE1521327A1 (de) | 1965-06-16 | 1966-06-14 | Verfahren und Vorrichtung zum Herstellen von zaehen Ueberzuegen auf einer Obernaeche |
Country Status (4)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989004382A1 (en) * | 1987-11-02 | 1989-05-18 | Jens Christiansen | Process and device for producing thin layers of a material which melts or sublimes at high temperatures on a substrate |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3625848A (en) * | 1968-12-26 | 1971-12-07 | Alvin A Snaper | Arc deposition process and apparatus |
| US3904505A (en) * | 1970-03-20 | 1975-09-09 | Space Sciences Inc | Apparatus for film deposition |
| US3929512A (en) * | 1970-12-09 | 1975-12-30 | Philips Corp | Semiconductor devices |
| FR2129996B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1971-03-25 | 1975-01-17 | Centre Nat Etd Spatiales | |
| US3790411A (en) * | 1972-03-08 | 1974-02-05 | Bell Telephone Labor Inc | Method for doping semiconductor bodies by neutral particle implantation |
| US4210701A (en) * | 1972-08-14 | 1980-07-01 | Precision Thin Film Corporation | Method and apparatus for depositing film on a substrate, and products produced thereby |
| US4046712A (en) * | 1972-11-30 | 1977-09-06 | United Kingdom Atomic Energy Authority | Catalysts sputtered on substantially nonporous low surface area particulate supports |
| US4059067A (en) * | 1974-10-09 | 1977-11-22 | Balzers Patent-Und Beteiligungs-Aktiengesellschaft | Apparatus for determining the rate of flow of particles in a vacuum deposition device |
| US4001049A (en) * | 1975-06-11 | 1977-01-04 | International Business Machines Corporation | Method for improving dielectric breakdown strength of insulating-glassy-material layer of a device including ion implantation therein |
| DE2529598C3 (de) * | 1975-07-02 | 1978-05-24 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer monolithisch integrierten Halbleiterschaltung mit bipolaren Transistoren |
| US5054902B1 (en) * | 1975-12-29 | 1998-06-23 | William J King | Light control with color enhancement |
| JPS5372A (en) * | 1976-06-24 | 1978-01-05 | Agency Of Ind Science & Technol | Selective doping crystal growing method |
| US4108751A (en) * | 1977-06-06 | 1978-08-22 | King William J | Ion beam implantation-sputtering |
| US4278890A (en) * | 1977-07-01 | 1981-07-14 | The United States Of America As Represented By The United States Department Of Energy | Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering |
| US4384911A (en) * | 1978-07-31 | 1983-05-24 | Precision Thin Film Corporation | Method for depositing hard film on a substrate |
| JPS5930130B2 (ja) * | 1979-09-20 | 1984-07-25 | 富士通株式会社 | 気相成長方法 |
| US4503125A (en) * | 1979-10-01 | 1985-03-05 | Xebec, Inc. | Protective overcoating for magnetic recording discs and method for forming the same |
| EP0032788B2 (en) * | 1980-01-16 | 1989-12-06 | National Research Development Corporation | Method for depositing coatings in a glow discharge |
| FR2550681B1 (fr) * | 1983-08-12 | 1985-12-06 | Centre Nat Rech Scient | Source d'ions a au moins deux chambres d'ionisation, en particulier pour la formation de faisceaux d'ions chimiquement reactifs |
| US5387247A (en) * | 1983-10-25 | 1995-02-07 | Sorin Biomedia S.P.A. | Prosthetic device having a biocompatible carbon film thereon and a method of and apparatus for forming such device |
| US4537791A (en) * | 1984-03-27 | 1985-08-27 | Cordis Corporation | Carbon coating of grafts or catheters |
| US5082747A (en) * | 1985-11-12 | 1992-01-21 | Hedgcoth Virgle L | Magnetic recording disk and sputtering process and apparatus for producing same |
| US5084151A (en) * | 1985-11-26 | 1992-01-28 | Sorin Biomedica S.P.A. | Method and apparatus for forming prosthetic device having a biocompatible carbon film thereon |
| US4747922A (en) * | 1986-03-25 | 1988-05-31 | The United States Of America As Represented By The United States Department Of Energy | Confined ion beam sputtering device and method |
| GB8629409D0 (en) * | 1986-12-09 | 1987-01-21 | Evans B L | Multilayered structures |
| IT1196836B (it) * | 1986-12-12 | 1988-11-25 | Sorin Biomedica Spa | Protesi in materiale polimerico con rivestimento di carbonio biocompatibile |
| US5133845A (en) * | 1986-12-12 | 1992-07-28 | Sorin Biomedica, S.P.A. | Method for making prosthesis of polymeric material coated with biocompatible carbon |
| US4944754A (en) * | 1987-04-29 | 1990-07-31 | Vent-Plant Corporation | Method of manufacturing synthetic bone coated surgical implants |
| US4885070A (en) * | 1988-02-12 | 1989-12-05 | Leybold Aktiengesellschaft | Method and apparatus for the application of materials |
| GB2213501A (en) * | 1987-12-11 | 1989-08-16 | Plessey Co Plc | Production of superconducting thin films by ion beam sputtering from a single ceramic target |
| EP0357824B1 (en) * | 1988-09-08 | 1993-04-07 | Joshin Uramoto | A sheet plasma sputtering method and an apparatus for carrying out the method |
| JPH02163368A (ja) * | 1988-12-15 | 1990-06-22 | Matsushita Electric Ind Co Ltd | スパッタリング装置 |
| CA2065581C (en) * | 1991-04-22 | 2002-03-12 | Andal Corp. | Plasma enhancement apparatus and method for physical vapor deposition |
| GB2399350B (en) * | 2003-03-11 | 2006-06-21 | Trikon Technologies Ltd | Methods of forming tungsten or tungsten containing films |
| TWI520905B (zh) | 2005-08-30 | 2016-02-11 | 安特格利斯公司 | 利用選擇性氟化硼前驅物之硼離子植入方法，及供植入用之大群氫化硼之形成方法 |
| US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8968535B2 (en) * | 2009-12-14 | 2015-03-03 | Spp Process Technology Systems Uk Limited | Ion beam source |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE903017C (de) * | 1951-01-31 | 1954-02-01 | Sueddeutsche Lab G M B H | Herstellung kleiner Kugeln aus hochschmelzbaren Materialien |
-
1965
- 1965-06-16 US US464365A patent/US3472751A/en not_active Expired - Lifetime
-
1966
- 1966-06-14 DE DE19661521327 patent/DE1521327A1/de active Pending
- 1966-06-14 NL NL6608211A patent/NL6608211A/xx unknown
- 1966-06-15 GB GB26790/66A patent/GB1133936A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989004382A1 (en) * | 1987-11-02 | 1989-05-18 | Jens Christiansen | Process and device for producing thin layers of a material which melts or sublimes at high temperatures on a substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| US3472751A (en) | 1969-10-14 |
| GB1133936A (en) | 1968-11-20 |
| NL6608211A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1966-12-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| SH | Request for examination between 03.10.1968 and 22.04.1971 |