DE1421973A1 - Elektrolytisches AEtzverfahren fuer Halbleitermaterial - Google Patents

Elektrolytisches AEtzverfahren fuer Halbleitermaterial

Info

Publication number
DE1421973A1
DE1421973A1 DE19621421973 DE1421973A DE1421973A1 DE 1421973 A1 DE1421973 A1 DE 1421973A1 DE 19621421973 DE19621421973 DE 19621421973 DE 1421973 A DE1421973 A DE 1421973A DE 1421973 A1 DE1421973 A1 DE 1421973A1
Authority
DE
Germany
Prior art keywords
semiconductor body
etchant
percent
semiconductor
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19621421973
Other languages
German (de)
English (en)
Inventor
Teichner Robert W
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of DE1421973A1 publication Critical patent/DE1421973A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
DE19621421973 1961-12-22 1962-12-06 Elektrolytisches AEtzverfahren fuer Halbleitermaterial Pending DE1421973A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US161573A US3161576A (en) 1961-12-22 1961-12-22 Electroetch process for semiconductors

Publications (1)

Publication Number Publication Date
DE1421973A1 true DE1421973A1 (de) 1968-11-07

Family

ID=22581750

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19621421973 Pending DE1421973A1 (de) 1961-12-22 1962-12-06 Elektrolytisches AEtzverfahren fuer Halbleitermaterial

Country Status (3)

Country Link
US (2) US3161576A (en, 2012)
DE (1) DE1421973A1 (en, 2012)
GB (1) GB995104A (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0296348A1 (de) * 1987-05-27 1988-12-28 Siemens Aktiengesellschaft Ätzverfahren zum Erzeugen von Lochöffnungen oder Gräben in n-dotiertem Silizium
DE102016114969A1 (de) * 2016-06-21 2017-12-21 Extrude Hone Gmbh Verfahren und Vorrichtung zum elektrolytischen Polieren und Verfahren zum Herstellen einer Kathode

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1332173A (en, 2012) * 1961-06-19 1963-12-16
US4268348A (en) * 1963-12-16 1981-05-19 Signetics Corporation Method for making semiconductor structure
US3395092A (en) * 1965-05-24 1968-07-30 Ribes Vincent Dressing apparatus for diamond wheels
NL6703014A (en, 2012) * 1967-02-25 1968-08-26
US4108738A (en) * 1977-02-18 1978-08-22 Bell Telephone Laboratories, Incorporated Method for forming contacts to semiconductor devices
US4166782A (en) * 1978-11-06 1979-09-04 The United States Of America As Represented By The Secretary Of The Navy Method of anodically leveling semiconductor layers
FR2516408B1 (fr) * 1981-11-19 1985-07-26 Dassault Electronique Machine a laver les circuits electroniques
JPH085011B2 (ja) * 1989-07-10 1996-01-24 オリンパス光学工業株式会社 研削装置
US5091067A (en) * 1989-07-26 1992-02-25 Olympus Optical Company Limited Method and an apparatus for machining optical components
DE3929484A1 (de) * 1989-09-05 1991-03-14 Wacker Chemitronic Verfahren zum zweiseitigen chemomechanischen polieren von halbleiterscheiben, sowie vorrichtung zu seiner durchfuehrung und dadurch erhaeltliche halbleiterscheiben
US5491030A (en) * 1992-06-26 1996-02-13 Asahi Tec Corporation Surface finishing for metal moldings
US5893966A (en) 1997-07-28 1999-04-13 Micron Technology, Inc. Method and apparatus for continuous processing of semiconductor wafers
US10390582B2 (en) 2014-12-05 2019-08-27 Two Guys And A Hat Inc. Protective headgear

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2965556A (en) * 1959-04-15 1960-12-20 Struers Chemiske Lab H Apparatus for the electro-mechanical polishing of surfaces

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0296348A1 (de) * 1987-05-27 1988-12-28 Siemens Aktiengesellschaft Ätzverfahren zum Erzeugen von Lochöffnungen oder Gräben in n-dotiertem Silizium
US4874484A (en) * 1987-05-27 1989-10-17 Siemens Aktiengesellschaft Etching method for generating apertured openings or trenches in layers or substrates composed of n-doped silicon
DE102016114969A1 (de) * 2016-06-21 2017-12-21 Extrude Hone Gmbh Verfahren und Vorrichtung zum elektrolytischen Polieren und Verfahren zum Herstellen einer Kathode
DE102016114969B4 (de) 2016-06-21 2019-05-09 Extrude Hone Gmbh Verfahren und Vorrichtung zum elektrolytischen Polieren

Also Published As

Publication number Publication date
GB995104A (en) 1965-06-16
USB161573I5 (en, 2012)
US3161576A (en) 1964-12-15

Similar Documents

Publication Publication Date Title
DE1421973A1 (de) Elektrolytisches AEtzverfahren fuer Halbleitermaterial
DE2706519C2 (de) Verfahren zum Reinigen der Oberfläche von polierten Siliciumplättchen
EP0301471B1 (de) Verfahren zur Wiederverwendung von Silizium-Basismaterial einer Metall-Isolator-Halbleiter-(MIS)-Inversionsschicht-Solarzelle
WO2010088898A2 (de) Siliziumsolarzelle
DE2913802A1 (de) Emitter fuer feldelektronenemission und verfahren zum herstellen eines solchen emitters
DE2007865A1 (de) Verfahren und Vorrichtung zum Polieren einer Silicium-Oberflache
DE1489240B1 (de) Verfahren zum Herstellen von Halbleiterbauelementen
EP0204189A1 (de) Verfahren zum mechanisch-chemischen Polieren von Siliciumscheiben
DE1614995B1 (de) Verfahren zum Herstellen von Aluminiumkontakten an planaren Halbleiteranordnungen
DE2226264C2 (de) Verfahren zum zweistufigen Ätzen einer Ausnehmung
DE1194064B (de) Verfahren zum elektrolytischen AEtzen der Ober-flaeche eines mit Legierungselektroden aus einer Bleilegierung versehenen npn-Transistors mit einem Halbleiterkoerper aus Germanium
DE1961230C3 (de) Verfahren zum Passivieren eines PN-Übergänge aufweisenden Halbleiterkörpers und Anwendung des Verfahrens zur Herstellung eines Halbleiterbauelements
DE69211771T2 (de) Verfahren zur Behandlung der gravierten Oberfläche eines Halbleiters oder Halbisolierers, durch ein solches Verfahren hergestellte integrierte Schaltkreise, sowie Apparat zur anodischen Oxidation zur Durchführung eines solchen Verfahrens
DE1696084C (de) Verfahren zur Herstellung von Halbleitervorrichtungen mit Hilfe selektiver elektrolytischer Ätzung
DE506374C (de) Vorrichtung zum oberflaechlichen Reduzieren der Oxydschicht von Metall-Oxyd-Gleichrichterplatten
DE10238593A1 (de) Verfahren zur Herstellung von Halbleiterscheiben
DE7428330U (de) Vorrichtung zur aetzung von halbleiteraktivteilen
DE1439485A1 (de) Integriertes Stromkreisgebilde und Verfahren zu seiner Herstellung
DE1122635B (de) Verfahren zur galvanoplastischen Herstellung von Kontaktierungen auf Halbleiterkoerpern
DE1614995C (de) Verfahren zum Herstellen von Aluminiumkontakten an planaren Halbleiteranordnungen
DE1496992A1 (de) Verfahren zum elektrolytischen Polieren der Oberflaeche von insbesondere scheibenfoermigen Halbleiterkoerpern
AT232545B (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE1092974B (de) Verfahren zum Entfernen eines elektrisch leitenden Metalloxydueberzuges
DE533486C (de) Elektrische Gleichrichterzelle
DE2245788B2 (de) Verfahren zum aufbringen von metallkontakten an halbleiterbauelementen mit pn-uebergaengen