DE1278416B - Verfahren zur Herstellung von reinem hexagonalem Kadmiumsulfid - Google Patents
Verfahren zur Herstellung von reinem hexagonalem KadmiumsulfidInfo
- Publication number
- DE1278416B DE1278416B DEF38031A DEF0038031A DE1278416B DE 1278416 B DE1278416 B DE 1278416B DE F38031 A DEF38031 A DE F38031A DE F0038031 A DEF0038031 A DE F0038031A DE 1278416 B DE1278416 B DE 1278416B
- Authority
- DE
- Germany
- Prior art keywords
- zone
- vacuum
- pure
- cadmium
- cadmium sulfide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052980 cadmium sulfide Inorganic materials 0.000 title claims description 66
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000012535 impurity Substances 0.000 claims description 24
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000000260 fractional sublimation Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 description 10
- 239000007858 starting material Substances 0.000 description 10
- 239000000047 product Substances 0.000 description 7
- 238000000859 sublimation Methods 0.000 description 7
- 230000008022 sublimation Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 5
- 229910052793 cadmium Inorganic materials 0.000 description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 5
- 229910052717 sulfur Inorganic materials 0.000 description 5
- 239000011593 sulfur Substances 0.000 description 5
- 239000012808 vapor phase Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 239000012494 Quartz wool Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 238000000441 X-ray spectroscopy Methods 0.000 description 1
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001661 cadmium Chemical class 0.000 description 1
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000012043 crude product Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/08—Sulfides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G11/00—Compounds of cadmium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/10—Solid density
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEF38031A DE1278416B (de) | 1962-10-13 | 1962-10-13 | Verfahren zur Herstellung von reinem hexagonalem Kadmiumsulfid |
| CH1201063A CH451893A (de) | 1962-10-13 | 1963-09-30 | Verfahren zur Herstellung von hochreinen hexagonalen Chalkogeniden des Zinks und Kadmiums |
| AT789263A AT250307B (de) | 1962-10-13 | 1963-10-02 | Verfahren zur Herstellung von hexagonalen Chalkogeniden des Zinks und Cadmiums mit Halbleiterreinheit |
| US313972A US3362795A (en) | 1962-10-13 | 1963-10-04 | Production of highly pure hexagonal crystals of cadmium and zinc chalkogenides by sublimation |
| GB40028/63A GB1018405A (en) | 1962-10-13 | 1963-10-10 | A process for the production of highly pure hexagonal cadmium and zinc chalkogenides |
| JP5513463A JPS4325126B1 (https=) | 1962-10-13 | 1963-10-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEF38031A DE1278416B (de) | 1962-10-13 | 1962-10-13 | Verfahren zur Herstellung von reinem hexagonalem Kadmiumsulfid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1278416B true DE1278416B (de) | 1968-09-26 |
Family
ID=7097185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEF38031A Pending DE1278416B (de) | 1962-10-13 | 1962-10-13 | Verfahren zur Herstellung von reinem hexagonalem Kadmiumsulfid |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3362795A (https=) |
| JP (1) | JPS4325126B1 (https=) |
| AT (1) | AT250307B (https=) |
| CH (1) | CH451893A (https=) |
| DE (1) | DE1278416B (https=) |
| GB (1) | GB1018405A (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3771970A (en) * | 1970-02-02 | 1973-11-13 | Tyco Laboratories Inc | Method of producing cadmium telluride crystals |
| US3870473A (en) * | 1970-09-02 | 1975-03-11 | Hughes Aircraft Co | Tandem furnace crystal growing device |
| SE380000B (https=) * | 1971-08-31 | 1975-10-27 | Atomic Energy Of Australia | |
| US4254093A (en) * | 1976-11-09 | 1981-03-03 | Gte Products Corporation | Solar energy grade cadmium sulfide |
| DE2949512C2 (de) * | 1979-12-08 | 1982-10-21 | W.C. Heraeus Gmbh, 6450 Hanau | Verfahren zur Nachbehandlung von Zinksulfid-Körpern für optische Zwecke |
| FR2545845B1 (fr) * | 1983-05-10 | 1987-03-20 | Centre Nat Etd Spatiales | Procede et dispositif perfectionnes pour la production de monocristaux |
| US4634493A (en) * | 1983-10-24 | 1987-01-06 | The United States Of America As Represented By The Secretary Of The Air Force | Method for making semiconductor crystals |
| KR100423740B1 (ko) * | 2001-09-14 | 2004-03-22 | 한국원자력연구소 | 방사성 인 핵종 제조를 위한 황의 증류방법 |
| US20090000700A1 (en) * | 2007-06-29 | 2009-01-01 | Hogan Patrick K | Treatment method for optically transmissive body |
| US7790072B2 (en) * | 2007-12-18 | 2010-09-07 | Raytheon Company | Treatment method for optically transmissive bodies |
| RU2376242C1 (ru) * | 2008-09-18 | 2009-12-20 | Исак Нохинович Лисичкин | Способ переработки отходов селенида цинка |
| CN114086251B (zh) * | 2021-12-02 | 2024-05-31 | 中国电子科技集团公司第四十六研究所 | 一种高电学均匀性低阻CdS多晶料的制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2860948A (en) * | 1949-05-24 | 1958-11-18 | Sherman M Fried | Separation of neptunium from plutonium by chlorination and sublimation |
| FR68542E (fr) * | 1955-10-25 | 1958-05-02 | Lampes Sa | Matériaux électro-luminescents et méthode de préparation |
| US3042501A (en) * | 1955-10-28 | 1962-07-03 | Harvey L Noblitt | Separation and recovery of volatile sulphides from sulphide materials |
| US2947613A (en) * | 1956-03-16 | 1960-08-02 | Donald C Reynolds | Growth of crystals |
| FR1148715A (fr) * | 1956-04-03 | 1957-12-13 | Pechiney | Sublimation |
| GB825356A (en) * | 1957-06-26 | 1959-12-16 | Europ Res Associates S A | Process for the production of crystals |
| US3218203A (en) * | 1961-10-09 | 1965-11-16 | Monsanto Co | Altering proportions in vapor deposition process to form a mixed crystal graded energy gap |
-
1962
- 1962-10-13 DE DEF38031A patent/DE1278416B/de active Pending
-
1963
- 1963-09-30 CH CH1201063A patent/CH451893A/de unknown
- 1963-10-02 AT AT789263A patent/AT250307B/de active
- 1963-10-04 US US313972A patent/US3362795A/en not_active Expired - Lifetime
- 1963-10-10 GB GB40028/63A patent/GB1018405A/en not_active Expired
- 1963-10-14 JP JP5513463A patent/JPS4325126B1/ja active Pending
Non-Patent Citations (1)
| Title |
|---|
| None * |
Also Published As
| Publication number | Publication date |
|---|---|
| US3362795A (en) | 1968-01-09 |
| GB1018405A (en) | 1966-01-26 |
| JPS4325126B1 (https=) | 1968-10-30 |
| AT250307B (de) | 1966-11-10 |
| CH451893A (de) | 1968-05-15 |
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