GB825356A - Process for the production of crystals - Google Patents

Process for the production of crystals

Info

Publication number
GB825356A
GB825356A GB20280/58A GB2028058A GB825356A GB 825356 A GB825356 A GB 825356A GB 20280/58 A GB20280/58 A GB 20280/58A GB 2028058 A GB2028058 A GB 2028058A GB 825356 A GB825356 A GB 825356A
Authority
GB
United Kingdom
Prior art keywords
layer
crystals
substrate
semi
vacuum evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20280/58A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Europ Res Associates S A
Original Assignee
Europ Res Associates S A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Europ Res Associates S A filed Critical Europ Res Associates S A
Publication of GB825356A publication Critical patent/GB825356A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Crystals of semi-conductor material are prepared by depositing a layer less than 0.1 mm. thick of the material by vacuum evaporation on a substrate, activating the layer by deposition by vacuum evaporation of an activator material to promote the crystal growth of the layer and transforming the layer by heating in an inert atmosphere into crystals having a main diameter larger than the thickness, the crystals growing in a direction parallel to the surface of the substrate. The semi-conductor material is cadmium sulphide, zinc sulphide, lead sulphide, germanium, silicon or tellurium, and the activator is silver, copper, lead, zinc, aluminium, gallium, indium, boron, phosphorus or antimony. The substrate may be polished glass. The amount of activator material is of the order of 10-3 atoms per cent based on the semi-conductor material. The vacuum evaporation is effected at a pressure below 10-4 mms. of mercury. The substrate is heated to 100 DEG to 200 DEG C. prior to the deposition. The layer is heated in argon at a temperature whereat a maximum of 10 crystals per square centimetre are produced, and the velocity of growth of the crystal front is less than 0.1 mm. per second.
GB20280/58A 1957-06-26 1958-06-25 Process for the production of crystals Expired GB825356A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE825356X 1957-06-26

Publications (1)

Publication Number Publication Date
GB825356A true GB825356A (en) 1959-12-16

Family

ID=6747511

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20280/58A Expired GB825356A (en) 1957-06-26 1958-06-25 Process for the production of crystals

Country Status (1)

Country Link
GB (1) GB825356A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3362795A (en) * 1962-10-13 1968-01-09 Bayer Ag Production of highly pure hexagonal crystals of cadmium and zinc chalkogenides by sublimation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3362795A (en) * 1962-10-13 1968-01-09 Bayer Ag Production of highly pure hexagonal crystals of cadmium and zinc chalkogenides by sublimation

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