DE1268117B - Verfahren zum Eindiffundieren von Bor in einen Halbleiterkoerper - Google Patents

Verfahren zum Eindiffundieren von Bor in einen Halbleiterkoerper

Info

Publication number
DE1268117B
DE1268117B DEP1268A DE1268117A DE1268117B DE 1268117 B DE1268117 B DE 1268117B DE P1268 A DEP1268 A DE P1268A DE 1268117 A DE1268117 A DE 1268117A DE 1268117 B DE1268117 B DE 1268117B
Authority
DE
Germany
Prior art keywords
inert gas
boron
water
passed
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEP1268A
Other languages
German (de)
English (en)
Inventor
Julian Robert Anthony Beale
Henry Edward Brockman
Peter Eric Krebs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1268117B publication Critical patent/DE1268117B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A50/00—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE in human health protection, e.g. against extreme weather
    • Y02A50/20—Air quality improvement or preservation, e.g. vehicle emission control or emission reduction by using catalytic converters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/92—Controlling diffusion profile by oxidation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Gases (AREA)
  • Glass Compositions (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
DEP1268A 1961-02-20 1962-02-16 Verfahren zum Eindiffundieren von Bor in einen Halbleiterkoerper Pending DE1268117B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB6150/61A GB945097A (en) 1961-02-20 1961-02-20 Improvements in and relating to methods of diffusing boron into semi-conductor bodies

Publications (1)

Publication Number Publication Date
DE1268117B true DE1268117B (de) 1968-05-16

Family

ID=9809328

Family Applications (1)

Application Number Title Priority Date Filing Date
DEP1268A Pending DE1268117B (de) 1961-02-20 1962-02-16 Verfahren zum Eindiffundieren von Bor in einen Halbleiterkoerper

Country Status (4)

Country Link
US (1) US3164501A (enExample)
DE (1) DE1268117B (enExample)
GB (1) GB945097A (enExample)
NL (1) NL274819A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3244567A (en) * 1962-09-10 1966-04-05 Trw Semiconductors Inc Impurity diffusion method
US3497368A (en) * 1964-06-02 1970-02-24 Union Carbide Corp Strengthening of transition metal carbides to withstand deformation at high temperatures
US3477887A (en) * 1966-07-01 1969-11-11 Motorola Inc Gaseous diffusion method
US3484314A (en) * 1967-02-23 1969-12-16 Itt Water vapor control in vapor-solid diffusion of boron
GB1143907A (en) * 1967-07-10 1969-02-26 Marconi Co Ltd Improvements in or relating to methods of manufacturing semiconductor devices
US3542609A (en) * 1967-11-22 1970-11-24 Itt Double depositions of bbr3 in silicon
GB1332994A (en) * 1971-01-11 1973-10-10 Mullard Ltd Method of diffusing an impurity into a semiconductor body
CN115094521B (zh) * 2022-06-27 2023-12-19 中南大学 一种硼扩散反应系统及其工艺方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE840418C (de) * 1949-05-30 1952-06-05 Licentia Gmbh Verfahren zum Herstellen Stoerstellen enthaltender Halbleiter, insbesondere fuer Trockengleichrichter
DE1044981B (de) * 1956-10-24 1958-11-27 Siemens Ag Verfahren zur Dotierung von Halbleiterkoerpern mit Bor
AT212881B (de) * 1958-06-09 1961-01-10 Western Electric Co Verfahren zur Einführung einer die Leitfähigkeitstype bestimmenden Verunreinigung in einen Siliziumkörper

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2804405A (en) * 1954-12-24 1957-08-27 Bell Telephone Labor Inc Manufacture of silicon devices
NL109817C (enExample) * 1955-12-02
US2879190A (en) * 1957-03-22 1959-03-24 Bell Telephone Labor Inc Fabrication of silicon devices
US2873222A (en) * 1957-11-07 1959-02-10 Bell Telephone Labor Inc Vapor-solid diffusion of semiconductive material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE840418C (de) * 1949-05-30 1952-06-05 Licentia Gmbh Verfahren zum Herstellen Stoerstellen enthaltender Halbleiter, insbesondere fuer Trockengleichrichter
DE1044981B (de) * 1956-10-24 1958-11-27 Siemens Ag Verfahren zur Dotierung von Halbleiterkoerpern mit Bor
AT212881B (de) * 1958-06-09 1961-01-10 Western Electric Co Verfahren zur Einführung einer die Leitfähigkeitstype bestimmenden Verunreinigung in einen Siliziumkörper

Also Published As

Publication number Publication date
NL274819A (enExample) 1900-01-01
US3164501A (en) 1965-01-05
GB945097A (en) 1963-12-23

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