NL274819A - - Google Patents
Info
- Publication number
- NL274819A NL274819A NL274819DA NL274819A NL 274819 A NL274819 A NL 274819A NL 274819D A NL274819D A NL 274819DA NL 274819 A NL274819 A NL 274819A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A50/00—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE in human health protection, e.g. against extreme weather
- Y02A50/20—Air quality improvement or preservation, e.g. vehicle emission control or emission reduction by using catalytic converters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/92—Controlling diffusion profile by oxidation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Gases (AREA)
- Glass Compositions (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB6150/61A GB945097A (en) | 1961-02-20 | 1961-02-20 | Improvements in and relating to methods of diffusing boron into semi-conductor bodies |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL274819A true NL274819A (enExample) | 1900-01-01 |
Family
ID=9809328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL274819D NL274819A (enExample) | 1961-02-20 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3164501A (enExample) |
| DE (1) | DE1268117B (enExample) |
| GB (1) | GB945097A (enExample) |
| NL (1) | NL274819A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3244567A (en) * | 1962-09-10 | 1966-04-05 | Trw Semiconductors Inc | Impurity diffusion method |
| US3497368A (en) * | 1964-06-02 | 1970-02-24 | Union Carbide Corp | Strengthening of transition metal carbides to withstand deformation at high temperatures |
| US3477887A (en) * | 1966-07-01 | 1969-11-11 | Motorola Inc | Gaseous diffusion method |
| US3484314A (en) * | 1967-02-23 | 1969-12-16 | Itt | Water vapor control in vapor-solid diffusion of boron |
| GB1143907A (en) * | 1967-07-10 | 1969-02-26 | Marconi Co Ltd | Improvements in or relating to methods of manufacturing semiconductor devices |
| US3542609A (en) * | 1967-11-22 | 1970-11-24 | Itt | Double depositions of bbr3 in silicon |
| GB1332994A (en) * | 1971-01-11 | 1973-10-10 | Mullard Ltd | Method of diffusing an impurity into a semiconductor body |
| CN115094521B (zh) * | 2022-06-27 | 2023-12-19 | 中南大学 | 一种硼扩散反应系统及其工艺方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE840418C (de) * | 1949-05-30 | 1952-06-05 | Licentia Gmbh | Verfahren zum Herstellen Stoerstellen enthaltender Halbleiter, insbesondere fuer Trockengleichrichter |
| US2804405A (en) * | 1954-12-24 | 1957-08-27 | Bell Telephone Labor Inc | Manufacture of silicon devices |
| NL109817C (enExample) * | 1955-12-02 | |||
| DE1044981B (de) * | 1956-10-24 | 1958-11-27 | Siemens Ag | Verfahren zur Dotierung von Halbleiterkoerpern mit Bor |
| US2879190A (en) * | 1957-03-22 | 1959-03-24 | Bell Telephone Labor Inc | Fabrication of silicon devices |
| US2873222A (en) * | 1957-11-07 | 1959-02-10 | Bell Telephone Labor Inc | Vapor-solid diffusion of semiconductive material |
| AT212881B (de) * | 1958-06-09 | 1961-01-10 | Western Electric Co | Verfahren zur Einführung einer die Leitfähigkeitstype bestimmenden Verunreinigung in einen Siliziumkörper |
-
0
- NL NL274819D patent/NL274819A/xx unknown
-
1961
- 1961-02-20 GB GB6150/61A patent/GB945097A/en not_active Expired
-
1962
- 1962-02-16 DE DEP1268A patent/DE1268117B/de active Pending
- 1962-02-16 US US173669A patent/US3164501A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3164501A (en) | 1965-01-05 |
| GB945097A (en) | 1963-12-23 |
| DE1268117B (de) | 1968-05-16 |