DE1261252C2 - Elektronisches, bistabiles sperrschichtfreies Halbleiterschaltelement und Verfahren zu seiner Herstellung - Google Patents
Elektronisches, bistabiles sperrschichtfreies Halbleiterschaltelement und Verfahren zu seiner HerstellungInfo
- Publication number
- DE1261252C2 DE1261252C2 DE1965D0048616 DED0048616A DE1261252C2 DE 1261252 C2 DE1261252 C2 DE 1261252C2 DE 1965D0048616 DE1965D0048616 DE 1965D0048616 DE D0048616 A DED0048616 A DE D0048616A DE 1261252 C2 DE1261252 C2 DE 1261252C2
- Authority
- DE
- Germany
- Prior art keywords
- switching element
- antimony
- semiconductor
- semiconductor switching
- mixing ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 title claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 21
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 21
- 239000000654 additive Substances 0.000 claims description 8
- 230000000996 additive effect Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 239000011669 selenium Substances 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 239000011593 sulfur Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims 2
- 150000001875 compounds Chemical group 0.000 claims 2
- 230000000737 periodic effect Effects 0.000 claims 2
- 239000000470 constituent Substances 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- MOUPNEIJQCETIW-UHFFFAOYSA-N lead chromate Chemical compound [Pb+2].[O-][Cr]([O-])(=O)=O MOUPNEIJQCETIW-UHFFFAOYSA-N 0.000 claims 1
- 229910052959 stibnite Inorganic materials 0.000 claims 1
- IHBMMJGTJFPEQY-UHFFFAOYSA-N sulfanylidene(sulfanylidenestibanylsulfanyl)stibane Chemical compound S=[Sb]S[Sb]=S IHBMMJGTJFPEQY-UHFFFAOYSA-N 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000005303 weighing Methods 0.000 claims 1
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Thermistors And Varistors (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1965D0048616 DE1261252C2 (de) | 1965-11-10 | 1965-11-10 | Elektronisches, bistabiles sperrschichtfreies Halbleiterschaltelement und Verfahren zu seiner Herstellung |
| AT975566A AT266264B (de) | 1965-11-10 | 1966-10-19 | Spannungsabhängiger Halbmetallschichtwiderstand mit negativer Stromspannungscharakteristik |
| CH1541566A CH454297A (de) | 1965-11-10 | 1966-10-21 | Elektronisches, bistabiles Halbleiterschaltelement und Verfahren zu seiner Herstellung |
| NL6615217A NL6615217A (enrdf_load_stackoverflow) | 1965-11-10 | 1966-10-27 | |
| GB48188/66A GB1147355A (en) | 1965-11-10 | 1966-10-27 | Improvements in or relating to semi-conductor switching elements |
| BE688955D BE688955A (enrdf_load_stackoverflow) | 1965-11-10 | 1966-10-27 | |
| FR83092A FR1498954A (fr) | 1965-11-10 | 1966-11-09 | élément de circuit électronique semi-conducteur bistable et procédé pour sa fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1965D0048616 DE1261252C2 (de) | 1965-11-10 | 1965-11-10 | Elektronisches, bistabiles sperrschichtfreies Halbleiterschaltelement und Verfahren zu seiner Herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1261252B DE1261252B (de) | 1968-02-15 |
| DE1261252C2 true DE1261252C2 (de) | 1974-01-03 |
Family
ID=7051308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1965D0048616 Expired DE1261252C2 (de) | 1965-11-10 | 1965-11-10 | Elektronisches, bistabiles sperrschichtfreies Halbleiterschaltelement und Verfahren zu seiner Herstellung |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT266264B (enrdf_load_stackoverflow) |
| BE (1) | BE688955A (enrdf_load_stackoverflow) |
| CH (1) | CH454297A (enrdf_load_stackoverflow) |
| DE (1) | DE1261252C2 (enrdf_load_stackoverflow) |
| FR (1) | FR1498954A (enrdf_load_stackoverflow) |
| GB (1) | GB1147355A (enrdf_load_stackoverflow) |
| NL (1) | NL6615217A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3203803B2 (ja) * | 1992-09-01 | 2001-08-27 | 株式会社デンソー | サーミスタ式温度センサ |
| DE102005001253A1 (de) * | 2005-01-11 | 2006-07-20 | Infineon Technologies Ag | Speicherzellenanordnung, Verfahren zu deren Herstellung und Halbleiterspeichereinrichtung |
| US7515454B2 (en) * | 2006-08-02 | 2009-04-07 | Infineon Technologies Ag | CBRAM cell and CBRAM array, and method of operating thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE622534A (enrdf_load_stackoverflow) * | 1961-09-19 | |||
| US2816228A (en) * | 1953-05-21 | 1957-12-10 | Rca Corp | Semiconductor phase shift oscillator and device |
| US2968014A (en) * | 1959-04-01 | 1961-01-10 | Kentucky Res Foundation | Synthetic stibnite crystal and method for producing the same |
-
1965
- 1965-11-10 DE DE1965D0048616 patent/DE1261252C2/de not_active Expired
-
1966
- 1966-10-19 AT AT975566A patent/AT266264B/de active
- 1966-10-21 CH CH1541566A patent/CH454297A/de unknown
- 1966-10-27 BE BE688955D patent/BE688955A/xx unknown
- 1966-10-27 GB GB48188/66A patent/GB1147355A/en not_active Expired
- 1966-10-27 NL NL6615217A patent/NL6615217A/xx unknown
- 1966-11-09 FR FR83092A patent/FR1498954A/fr not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2816228A (en) * | 1953-05-21 | 1957-12-10 | Rca Corp | Semiconductor phase shift oscillator and device |
| US2968014A (en) * | 1959-04-01 | 1961-01-10 | Kentucky Res Foundation | Synthetic stibnite crystal and method for producing the same |
| BE622534A (enrdf_load_stackoverflow) * | 1961-09-19 |
Also Published As
| Publication number | Publication date |
|---|---|
| BE688955A (enrdf_load_stackoverflow) | 1967-03-31 |
| DE1261252B (de) | 1968-02-15 |
| FR1498954A (fr) | 1967-10-20 |
| CH454297A (de) | 1968-04-15 |
| GB1147355A (en) | 1969-04-02 |
| NL6615217A (enrdf_load_stackoverflow) | 1967-05-11 |
| AT266264B (de) | 1968-11-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C2 | Grant after previous publication (2nd publication) |