DE1248810B - - Google Patents

Info

Publication number
DE1248810B
DE1248810B DES61433A DES0061433A DE1248810B DE 1248810 B DE1248810 B DE 1248810B DE S61433 A DES61433 A DE S61433A DE S0061433 A DES0061433 A DE S0061433A DE 1248810 B DE1248810 B DE 1248810B
Authority
DE
Germany
Prior art keywords
semiconductor
additive
junction
rectifier
electropositive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DES61433A
Other languages
German (de)
English (en)
Other versions
DE1248810C2 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL127388D priority Critical patent/NL127388C/xx
Priority to NL247076D priority patent/NL247076A/xx
Application filed filed Critical
Priority to DE1959S0061433 priority patent/DE1248810C2/de
Priority to FR813091A priority patent/FR1291525A/fr
Priority to CH23560A priority patent/CH392696A/de
Priority to GB2310/60A priority patent/GB889318A/en
Publication of DE1248810B publication Critical patent/DE1248810B/de
Application granted granted Critical
Publication of DE1248810C2 publication Critical patent/DE1248810C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Paints Or Removers (AREA)
  • Thermistors And Varistors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
DE1959S0061433 1959-01-21 1959-01-21 Halbleiterbauelement mit Lackschutzschicht Expired DE1248810C2 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL127388D NL127388C (OSRAM) 1959-01-21
NL247076D NL247076A (OSRAM) 1959-01-21
DE1959S0061433 DE1248810C2 (de) 1959-01-21 1959-01-21 Halbleiterbauelement mit Lackschutzschicht
FR813091A FR1291525A (fr) 1959-01-21 1959-12-15 Procédé de fabrication de dispositifs semi-conducteurs à jonctions p-n tels que des redresseurs ou des transistors à jonctions
CH23560A CH392696A (de) 1959-01-21 1960-01-11 Verfahren zur Herstellung einer Halbleiteranordnung mit p-n-Übergang, welcher mit einer Lackschutzschicht versehen ist
GB2310/60A GB889318A (en) 1959-01-21 1960-01-21 A semi-conductor device having a p-n-junction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1959S0061433 DE1248810C2 (de) 1959-01-21 1959-01-21 Halbleiterbauelement mit Lackschutzschicht

Publications (2)

Publication Number Publication Date
DE1248810B true DE1248810B (OSRAM) 1967-08-31
DE1248810C2 DE1248810C2 (de) 1968-03-14

Family

ID=37436691

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1959S0061433 Expired DE1248810C2 (de) 1959-01-21 1959-01-21 Halbleiterbauelement mit Lackschutzschicht

Country Status (5)

Country Link
CH (1) CH392696A (OSRAM)
DE (1) DE1248810C2 (OSRAM)
FR (1) FR1291525A (OSRAM)
GB (1) GB889318A (OSRAM)
NL (2) NL247076A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764738B1 (de) * 1968-07-27 1970-09-24 Siemens Ag Halbleiterbauelement mit einem UEberzug aus bleihaltigem Isolierstoff am pn-UEbergang

Also Published As

Publication number Publication date
NL247076A (OSRAM) 1900-01-01
CH392696A (de) 1965-05-31
NL127388C (OSRAM) 1900-01-01
DE1248810C2 (de) 1968-03-14
FR1291525A (fr) 1962-04-27
GB889318A (en) 1962-02-14

Similar Documents

Publication Publication Date Title
DE1696625C3 (de) Verfahren zum Erzeugen einer Nitridschutzschicht auf einem Halbleiterkörper
DE2655341C2 (de) Halbleiteranordnung mit einer Passivierungsschicht aus Halbleitermaterial und Verfahren zu ihrer Herstellung
DE1589810B2 (de) Passiviertes halbleiterbauelement und verfahren zu seiner herstellung
DE2547304C2 (OSRAM)
Heilmann et al. Eine Methode zur Bestimmung der Nahordnung in Nickel-Eisen-Legierungen mit Hilfe des Mössbauer-Effektes
DE1032405B (de) Flaechenhalbleiter mit guter Waermeableitung
DE1248810C2 (de) Halbleiterbauelement mit Lackschutzschicht
DE2720327A1 (de) Verfahren zur herstellung von halbleiterbauelementen, insbesondere solarelementen
DE1154878B (de) Verfahren zur Herstellung von Halbleiterkoerpern fuer Halbleiteranordnungen aus n-leitendem Silizium durch Bestrahlen mit thermischen Neutronen
DE69025784T2 (de) Nichtflüchtige Speicher-Halbleiteranordnung
DE1105066B (de) Halbleiteranordnung mit einem wenigstens teilweise hochohmigen Kadmiumtelluridkoerper und Verfahren zu deren Herstellung
DE1159098B (de) Halbleiterbauelement mit mindestens einem pn-UEbergang und Verfahren zum Herstellen
DE1193766B (de) Verfahren zur Stabilisierung der durch AEtzen erzielten Sperreigenschaften von Halbleiteranordnungen
DE2356934C3 (de) Hochsperrendes Leistungshalbleiterbauelement
DE1106354B (de) Verfahren zur Erzeugung von Wuerfeltextur bei der Herstellung von Gegenstaenden aus Eisen-Silizium-Legierungen
DE3214368C2 (de) Gleichrichter aus Titandioxid
AT227778B (de) Verfahren zur Oberflächenbehandlung von Halbleiteranordnungen
AT227776B (de) Tunneldiode, insbesondere zur Gleichrichtung kleiner Wechselspannungen
DE1639051B1 (de) Verfahren zum herstellen eines ohmschen kontakts an einem halbleiterkoerper
DE1464602B2 (de) Verfahren zur Oberflächenbehandlung ..on Halbleiteranordnungen
DE750751C (de) Verfahren zur Verbesserung der Magnetisierbarkeit von Eisen-Kobalt-Legierungen
DE1246886B (de) Verfahren zur Stabilisierung und Verbesserung der Sperreigenschaften von Halbleiterbauelementen
Bross et al. Elektronenbau, Optik und Kristallchemie einwertiger Metalle
AT221128B (de) Verfahren zur Herstellung von Gegenständen aus Silizium-Eisen mit Würfeltextur
AT219305B (de) Gesinterter Thermoelementschenkel