GB889318A - A semi-conductor device having a p-n-junction - Google Patents

A semi-conductor device having a p-n-junction

Info

Publication number
GB889318A
GB889318A GB2310/60A GB231060A GB889318A GB 889318 A GB889318 A GB 889318A GB 2310/60 A GB2310/60 A GB 2310/60A GB 231060 A GB231060 A GB 231060A GB 889318 A GB889318 A GB 889318A
Authority
GB
United Kingdom
Prior art keywords
electro
junction
semi
jan
specification states
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2310/60A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB889318A publication Critical patent/GB889318A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01032Germanium [Ge]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01058Cerium [Ce]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12036PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Paints Or Removers (AREA)
  • Thermistors And Varistors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
GB2310/60A 1959-01-21 1960-01-21 A semi-conductor device having a p-n-junction Expired GB889318A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1959S0061433 DE1248810C2 (de) 1959-01-21 1959-01-21 Halbleiterbauelement mit Lackschutzschicht

Publications (1)

Publication Number Publication Date
GB889318A true GB889318A (en) 1962-02-14

Family

ID=37436691

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2310/60A Expired GB889318A (en) 1959-01-21 1960-01-21 A semi-conductor device having a p-n-junction

Country Status (5)

Country Link
CH (1) CH392696A (OSRAM)
DE (1) DE1248810C2 (OSRAM)
FR (1) FR1291525A (OSRAM)
GB (1) GB889318A (OSRAM)
NL (2) NL247076A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764738B1 (de) * 1968-07-27 1970-09-24 Siemens Ag Halbleiterbauelement mit einem UEberzug aus bleihaltigem Isolierstoff am pn-UEbergang

Also Published As

Publication number Publication date
NL247076A (OSRAM) 1900-01-01
CH392696A (de) 1965-05-31
NL127388C (OSRAM) 1900-01-01
DE1248810B (OSRAM) 1967-08-31
DE1248810C2 (de) 1968-03-14
FR1291525A (fr) 1962-04-27

Similar Documents

Publication Publication Date Title
GB889318A (en) A semi-conductor device having a p-n-junction
JPS5552246A (en) Semiconductor device
FR1140947A (fr) Dispositif utilisable notamment pour l'étalonnage des installations de détection de fuites et applications analogues
GB1002684A (en) Electrostatic treatment of silicone release coatings
GB857901A (en) Improvements in or relating to methods of sealing tubular electric heating elements
GB966594A (en) Improvements in or relating to methods of manufacturing semiconductor devices
GB860453A (en) Improvements in or relating to p-n-junction rectifiers
CA584484A (en) Coating composition containing polysiloxane and triethanolamine titanate
GB871586A (en) Improvements in and relating to polyethylenes
GB826559A (en) Improvements in semi-conductor devices
GB906765A (en) Semiconductor devices
GB982654A (en) A semi-conductor device
JPS5478663A (en) Resin-sealed semiconductor device
CA572560A (en) Etching silicon semiconductors
GB981683A (en) Improvements in or relating to methods of manufacturing semiconductor devices
AU230720B2 (en) Improvements relating top-n junction semiconductor devices
AU233812B2 (en) Improvements relating top-n junction semiconductor devices
CA572652A (en) Foot-supporting and corrective devices
CA584185A (en) Organosilicon polymers and compositions containing the same
BADINOV Design of a balloon-borne tracking system which focuses continuously onto the sun the various packaged instruments used to study direct solar radiation in a free atmosphere
KUBOTA et al. Moisture Measurement of Tea-Leaves
LOGAN Disturbance motion in rarefied gas as classical analogue of photoelectric effect, the process of energy transfer being similar
AU4919059A (en) Improvements relating top-n junction semiconductor devices
AU4814059A (en) Improvements relating top-n junction semiconductor devices
FR1221081A (fr) Procédé et dispositif accroissant l'importance des charges que peuvent recevoir les installations de dessiccation par congélation