GB826559A - Improvements in semi-conductor devices - Google Patents
Improvements in semi-conductor devicesInfo
- Publication number
- GB826559A GB826559A GB452055A GB452055A GB826559A GB 826559 A GB826559 A GB 826559A GB 452055 A GB452055 A GB 452055A GB 452055 A GB452055 A GB 452055A GB 826559 A GB826559 A GB 826559A
- Authority
- GB
- United Kingdom
- Prior art keywords
- mixture
- arsenic
- indium
- type
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000203 mixture Substances 0.000 abstract 4
- 229910052785 arsenic Inorganic materials 0.000 abstract 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 3
- 229910052738 indium Inorganic materials 0.000 abstract 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 239000007787 solid Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
826,559. PN junction devices. GENERAL ELECTRIC CO. July 1, 1958, No. 4520/55. Drawings to Specification. Class 37. A method of making a PN junction device comprises diffusing a material consisting of 90 to 99% by weight indium and the remainder arsenic or phosphorus or a mixture thereof into a surface region of a P-type semi-conductor body, e.g. of germanium or silicon. In the preferred embodiment a mixture of 90% indium and 10% arsenic is heated in contact with a P-type germanium body at 600‹ C. The mixture may be applied to the body in solid or liquid form or may be deposited by an evaporation process. As a further alternative the body may be exposed to the vapour of the mixture. The region into which the material diffuses becomes N-type because of the high diffusion rate and solid solubility of the arsenic or phosphorus, the purpose of the indium being to give improved mechanical and hence also electrical properties to the device. Specification 728,129 has been referred to. Reference has been directed by the Comptroller to Specification 801,713.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB452055A GB826559A (en) | 1958-07-01 | 1958-07-01 | Improvements in semi-conductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB452055A GB826559A (en) | 1958-07-01 | 1958-07-01 | Improvements in semi-conductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB826559A true GB826559A (en) | 1960-01-13 |
Family
ID=9778737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB452055A Expired GB826559A (en) | 1958-07-01 | 1958-07-01 | Improvements in semi-conductor devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB826559A (en) |
-
1958
- 1958-07-01 GB GB452055A patent/GB826559A/en not_active Expired
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