GB751143A - Improvements relating to the manufacture of semi-conductor devices - Google Patents

Improvements relating to the manufacture of semi-conductor devices

Info

Publication number
GB751143A
GB751143A GB9947/54A GB994754A GB751143A GB 751143 A GB751143 A GB 751143A GB 9947/54 A GB9947/54 A GB 9947/54A GB 994754 A GB994754 A GB 994754A GB 751143 A GB751143 A GB 751143A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor devices
manufacture
germanium
april
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB9947/54A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB751143A publication Critical patent/GB751143A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F3/00—Changing the physical structure of non-ferrous metals or alloys by special physical methods, e.g. treatment with neutrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

751,143. Semi-conductor devices. GENERAL ELECTRIC CO. April 5, 1954 [April 3,-1953], No. 9947/54. Class 37. A PN junction is produced by applying a melt of impurity material to the semi-conductor while mechanically restricting the contact area. A body 2 of heat-resistant material such as steel is placed against a block 4 of germanium and melted donor or acceptor material such as indium is placed in cavities 6 so that it diffuses into the germanium to provide a PN junction. Pressure on the impurity material may be maintained by means of spring plunger 8. The arrangement enables the position and extent of the diffusion region to be controlled. A multiple jig may be used to provide several PN junctions in one operation. Specification 727,900 is referred to.
GB9947/54A 1953-04-03 1954-04-05 Improvements relating to the manufacture of semi-conductor devices Expired GB751143A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US346662A US2791524A (en) 1953-04-03 1953-04-03 Fabrication method for p-n junctions

Publications (1)

Publication Number Publication Date
GB751143A true GB751143A (en) 1956-06-27

Family

ID=23360467

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9947/54A Expired GB751143A (en) 1953-04-03 1954-04-05 Improvements relating to the manufacture of semi-conductor devices

Country Status (2)

Country Link
US (1) US2791524A (en)
GB (1) GB751143A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3036937A (en) * 1957-12-26 1962-05-29 Sylvania Electric Prod Method for manufacturing alloyed junction semiconductor devices
DE1175364B (en) * 1961-10-24 1964-08-06 Telefunken Patent Alloy process for the manufacture of semiconductor devices

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL106130C (en) * 1954-06-29
US2942568A (en) * 1954-10-15 1960-06-28 Sylvania Electric Prod Manufacture of junction transistors
US2931743A (en) * 1955-05-02 1960-04-05 Philco Corp Method of fusing metal body to another body
US2960419A (en) * 1956-02-08 1960-11-15 Siemens Ag Method and device for producing electric semiconductor devices
US2893901A (en) * 1957-01-28 1959-07-07 Sprague Electric Co Semiconductor junction
US2994627A (en) * 1957-05-08 1961-08-01 Gen Motors Corp Manufacture of semiconductor devices
US3012916A (en) * 1957-10-22 1961-12-12 Bendix Corp Semiconductor device
DE1067935B (en) * 1958-01-17 1959-10-29
NL237782A (en) * 1958-02-04 1900-01-01
US3176376A (en) * 1958-04-24 1965-04-06 Motorola Inc Method of making semiconductor device
GB869863A (en) * 1958-06-18 1961-06-07 A & M Fell Ltd Improvements in or relating to the manufacture of transistors, rectifiers and other semi-conductor devices
US3171175A (en) * 1958-09-11 1965-03-02 Fidelitone Inc Method of bonding a stylus tip
US3068127A (en) * 1959-06-02 1962-12-11 Siemens Ag Method of producing a highly doped p-type zone and an appertaining contact on a semiconductor crystal
DE1108813B (en) * 1959-10-22 1961-06-15 Eberle & Koehler K G Process for the production of large-area blocking and blocking-free contacts on semiconductor bodies

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402950A (en) * 1943-04-13 1946-07-02 Merlyn M Culver Molded part and method of forming same
US2561579A (en) * 1947-10-02 1951-07-24 Gen Motors Corp Impregnated ferrous gear
US2612443A (en) * 1947-12-26 1952-09-30 Sintereast Corp Of America Powder metallurgy
US2518253A (en) * 1949-04-14 1950-08-08 American Measuring Instr Corp Metallic sealing ring
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
NL82014C (en) * 1949-11-30

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3036937A (en) * 1957-12-26 1962-05-29 Sylvania Electric Prod Method for manufacturing alloyed junction semiconductor devices
DE1175364B (en) * 1961-10-24 1964-08-06 Telefunken Patent Alloy process for the manufacture of semiconductor devices

Also Published As

Publication number Publication date
US2791524A (en) 1957-05-07

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