GB869863A - Improvements in or relating to the manufacture of transistors, rectifiers and other semi-conductor devices - Google Patents

Improvements in or relating to the manufacture of transistors, rectifiers and other semi-conductor devices

Info

Publication number
GB869863A
GB869863A GB19462/58A GB1946258A GB869863A GB 869863 A GB869863 A GB 869863A GB 19462/58 A GB19462/58 A GB 19462/58A GB 1946258 A GB1946258 A GB 1946258A GB 869863 A GB869863 A GB 869863A
Authority
GB
United Kingdom
Prior art keywords
jewels
pellet
jewel
semi
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB19462/58A
Inventor
Robert Andrew Fell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
A&M Fell Ltd
Original Assignee
A&M Fell Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by A&M Fell Ltd filed Critical A&M Fell Ltd
Priority to GB19462/58A priority Critical patent/GB869863A/en
Priority to US820055A priority patent/US3135232A/en
Priority to FR797822A priority patent/FR1230732A/en
Priority to DEF28707A priority patent/DE1114591B/en
Publication of GB869863A publication Critical patent/GB869863A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adornments (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

869,863. Semi-conductor devices. FELL Ltd., A & M. June 10, 1959 [June 18, 1958], No. 19462/58. Class 37. In a method of alloying activator material to a semiconductor during the manufacture of a rectifier diode or transistor a pellet of the material is located in contact with the semi-conductor by a real or synthetic jewel jig. In one embodiment (Fig. 3) a pellet 1 of indium is placed in the cavity formed by the annular and flat jewels 4b, 4a beneath a germanium wafer 6, and a second indium pellet 8 dropped into the aperture of a third jewel 8. The jewels, which may consist of ruby, sapphire, spinel, zircon, or rutile are located in steel shanks 5, 7 by spinning the bevelled edges of the shanks over the corresponding bevelled edges of jewels 4b, 8. The annular and flat jewels 4b, 4a may be replaced by a single jewel with a hemispherical or conical cavity in its upper face. Alloying is effected by passing the assembly through an oven. As an alternative a single pellet is first alloyed to the upper face of the wafer in an assembly in which the lower jewel or jewels are replaced by a plane surfaced jewel, whereupon the wafer is inverted and a second pellet alloyed to the now uppermost face. The advantage of using jewels for the jigs is that they can be machined with greater precision than other refractory materials.
GB19462/58A 1958-06-18 1958-06-18 Improvements in or relating to the manufacture of transistors, rectifiers and other semi-conductor devices Expired GB869863A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB19462/58A GB869863A (en) 1958-06-18 1958-06-18 Improvements in or relating to the manufacture of transistors, rectifiers and other semi-conductor devices
US820055A US3135232A (en) 1958-06-18 1959-06-12 Manufacture of transistors, rectifiers and the like
FR797822A FR1230732A (en) 1958-06-18 1959-06-18 Further training in the manufacture of transistors, rectifiers and similar devices
DEF28707A DE1114591B (en) 1958-06-18 1959-06-18 Device for producing semiconductor arrangements with alloyed electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB19462/58A GB869863A (en) 1958-06-18 1958-06-18 Improvements in or relating to the manufacture of transistors, rectifiers and other semi-conductor devices

Publications (1)

Publication Number Publication Date
GB869863A true GB869863A (en) 1961-06-07

Family

ID=10129771

Family Applications (1)

Application Number Title Priority Date Filing Date
GB19462/58A Expired GB869863A (en) 1958-06-18 1958-06-18 Improvements in or relating to the manufacture of transistors, rectifiers and other semi-conductor devices

Country Status (4)

Country Link
US (1) US3135232A (en)
DE (1) DE1114591B (en)
FR (1) FR1230732A (en)
GB (1) GB869863A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1132660B (en) * 1960-07-06 1962-07-05 Intermetall Alloying device for the production of semiconductor arrangements by simultaneously alloying electrodes on opposite surfaces of a semiconductor chip
NL278601A (en) * 1961-05-25
US3250048A (en) * 1964-08-18 1966-05-10 Philips Corp Multiple alloying jigs for manufacturing semiconductor devices having at least one alloy contact each
GB1508324A (en) * 1975-06-04 1978-04-19 Ciba Geigy Ag Moulds for encapsulating

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2791524A (en) * 1953-04-03 1957-05-07 Gen Electric Fabrication method for p-n junctions
BE525280A (en) * 1952-12-31 1900-01-01
US2817607A (en) * 1953-08-24 1957-12-24 Rca Corp Method of making semi-conductor bodies
NL91363C (en) * 1954-05-18
GB794674A (en) * 1954-08-31 1958-05-07 Gen Electric Co Ltd Improvements in or relating to methods of forming a junction in a semiconductor
US2942568A (en) * 1954-10-15 1960-06-28 Sylvania Electric Prod Manufacture of junction transistors
US2994627A (en) * 1957-05-08 1961-08-01 Gen Motors Corp Manufacture of semiconductor devices

Also Published As

Publication number Publication date
US3135232A (en) 1964-06-02
DE1114591B (en) 1961-10-05
FR1230732A (en) 1960-09-19

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