GB794674A - Improvements in or relating to methods of forming a junction in a semiconductor - Google Patents

Improvements in or relating to methods of forming a junction in a semiconductor

Info

Publication number
GB794674A
GB794674A GB2507255A GB2507255A GB794674A GB 794674 A GB794674 A GB 794674A GB 2507255 A GB2507255 A GB 2507255A GB 2507255 A GB2507255 A GB 2507255A GB 794674 A GB794674 A GB 794674A
Authority
GB
United Kingdom
Prior art keywords
semiconductor
junction
relating
methods
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2507255A
Inventor
Denis John Brand
John Ewels
James Samuel Miller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Publication of GB794674A publication Critical patent/GB794674A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)

Abstract

An alloy used in the fabrication of semiconductor junction devices (see Group XXXVI) consists of 99 per cent silicon and 1 per cent boron.
GB2507255A 1954-08-31 1954-08-31 Improvements in or relating to methods of forming a junction in a semiconductor Expired GB794674A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2507254 1954-08-31

Publications (1)

Publication Number Publication Date
GB794674A true GB794674A (en) 1958-05-07

Family

ID=10221754

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2507255A Expired GB794674A (en) 1954-08-31 1954-08-31 Improvements in or relating to methods of forming a junction in a semiconductor

Country Status (1)

Country Link
GB (1) GB794674A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1130076B (en) * 1959-03-18 1962-05-24 Ass Elect Ind Device for manufacturing area transistors using the alloy process
US3095622A (en) * 1958-06-11 1963-07-02 Clevite Corp Apparatus for manufacture of alloyed semiconductor devices
US3135232A (en) * 1958-06-18 1964-06-02 A & M Fell Ltd Manufacture of transistors, rectifiers and the like
DE1229991B (en) * 1960-03-04 1966-12-08 Telefunken Patent Method and device for the production of alloyed pn junctions in semiconductor arrangements
DE1242192B (en) * 1960-03-24 1967-06-15 Siemens Ag Method for doping a semiconductor body

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3095622A (en) * 1958-06-11 1963-07-02 Clevite Corp Apparatus for manufacture of alloyed semiconductor devices
US3135232A (en) * 1958-06-18 1964-06-02 A & M Fell Ltd Manufacture of transistors, rectifiers and the like
DE1130076B (en) * 1959-03-18 1962-05-24 Ass Elect Ind Device for manufacturing area transistors using the alloy process
DE1229991B (en) * 1960-03-04 1966-12-08 Telefunken Patent Method and device for the production of alloyed pn junctions in semiconductor arrangements
DE1242192B (en) * 1960-03-24 1967-06-15 Siemens Ag Method for doping a semiconductor body

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