GB928562A - Methods of varying carrier mobility in semiconductive bodies - Google Patents
Methods of varying carrier mobility in semiconductive bodiesInfo
- Publication number
- GB928562A GB928562A GB2522161A GB2522161A GB928562A GB 928562 A GB928562 A GB 928562A GB 2522161 A GB2522161 A GB 2522161A GB 2522161 A GB2522161 A GB 2522161A GB 928562 A GB928562 A GB 928562A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- strain
- wafer
- mesa
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 230000037230 mobility Effects 0.000 abstract 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 abstract 1
- 229910005542 GaSb Inorganic materials 0.000 abstract 1
- 229910002665 PbTe Inorganic materials 0.000 abstract 1
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
- H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Die Bonding (AREA)
Abstract
928,562. Semi-conductor devices. WESTERN ELECTRIC CO. Ltd. July 12, 1961 [July 18, 1960], No. 25221/61. Class 37. In making a semi-conductive device containing at least one PN junction a directional elastic strain is produced and maintained in the semiconductive material and if of a magnitude such that the carrier mobilities in the material are altered by at least 15%, the strain direction being aligned with respect to a crystallographic direction of the material. A theoretical discussion of the effect is given and includes data relating to the choice of the strain direction. In the mesa-type transistor shown in Figs. 2 and 3 the stressing of the P-type germanium wafer 5 serving as the collector communicates a compressive strain to the N-type base region 11 bearing a heavily doped P-type base contact 12 and an N-type emitter region 13 and simultaneously increases the mobilities of electrons in the direction across the base zone and of holes in the plane of the zone. The three other embodiments described, Figs. 4, 5, 6 (not shown) are a NPN transistor, a PNP mesa-type transistor, and a P+NN+ varactor diode, and these are stressed in differing ways: the plane germanium wafer of the NPN transistor is hard soldered at its ends to the surface of a block which is bent about a fulcrum to apply tensile strain to the wafer; the P-type collector wafer of the PNP mean-type transistor is hard soldered to the end face of a metal pin held under biaxial radial compression and the force on the pin them removed thus applying biaxial tension to the wafer and the N-type mesa on its other surface; the base region of the varactor diode is hard soldered or otherwise attached to a heated bar which is then allowed to cool, thus setting up a compressive strain in the diode. Semiconductive materials suitable for using the effect are:- Si, Ge, InSb, PbTe, GaSb, AgSbTe 2 , AgSbTe, Cu 3 AsS 4 , Cu 3 AsS 3 , Cu 3 SbS 3 , Bi 2 Te 3 , Bi 2 Se 3 , Sb 2 Te 3 , PbSe, CdS, ZnO, AgSbSe 2 .
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4349460A | 1960-07-18 | 1960-07-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB928562A true GB928562A (en) | 1963-06-12 |
Family
ID=21927441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2522161A Expired GB928562A (en) | 1960-07-18 | 1961-07-12 | Methods of varying carrier mobility in semiconductive bodies |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE606275A (en) |
| DE (1) | DE1232270B (en) |
| GB (1) | GB928562A (en) |
| NL (1) | NL267220A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0075374A1 (en) * | 1981-09-23 | 1983-03-30 | Budapesti Radiotechnikai Gyar | Ground-plane antenna |
| WO2002045156A2 (en) * | 2000-11-29 | 2002-06-06 | Intel Corporation | Cmos fabrication process utilizing special transistor orientation |
| CN100452321C (en) * | 2004-07-20 | 2009-01-14 | 国际商业机器公司 | Creating increased mobility in a bipolar device and bipolar device |
| US7888710B2 (en) | 2000-11-29 | 2011-02-15 | Intel Corporation | CMOS fabrication process utilizing special transistor orientation |
| CN112968067A (en) * | 2021-02-25 | 2021-06-15 | 电子科技大学 | Bi-doped sulfur antimony silver-based inorganic thin-film solar cell and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008008931B3 (en) * | 2008-02-13 | 2009-07-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Device for operating electrical signal of integrated circuit, has component, which has p-doped area with connection and n-doped area with another connection, and another component is provided, which is coupled with former component |
-
0
- NL NL267220D patent/NL267220A/xx unknown
- BE BE606275D patent/BE606275A/xx unknown
-
1961
- 1961-07-12 GB GB2522161A patent/GB928562A/en not_active Expired
- 1961-07-17 DE DE1961W0030365 patent/DE1232270B/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0075374A1 (en) * | 1981-09-23 | 1983-03-30 | Budapesti Radiotechnikai Gyar | Ground-plane antenna |
| WO2002045156A2 (en) * | 2000-11-29 | 2002-06-06 | Intel Corporation | Cmos fabrication process utilizing special transistor orientation |
| WO2002045156A3 (en) * | 2000-11-29 | 2003-01-23 | Intel Corp | Cmos fabrication process utilizing special transistor orientation |
| US7312485B2 (en) | 2000-11-29 | 2007-12-25 | Intel Corporation | CMOS fabrication process utilizing special transistor orientation |
| US7888710B2 (en) | 2000-11-29 | 2011-02-15 | Intel Corporation | CMOS fabrication process utilizing special transistor orientation |
| CN100452321C (en) * | 2004-07-20 | 2009-01-14 | 国际商业机器公司 | Creating increased mobility in a bipolar device and bipolar device |
| CN112968067A (en) * | 2021-02-25 | 2021-06-15 | 电子科技大学 | Bi-doped sulfur antimony silver-based inorganic thin-film solar cell and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| BE606275A (en) | |
| NL267220A (en) | |
| DE1232270B (en) | 1967-01-12 |
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