GB893878A - Improvements in or relating to power transistors - Google Patents
Improvements in or relating to power transistorsInfo
- Publication number
- GB893878A GB893878A GB23396/58A GB2339658A GB893878A GB 893878 A GB893878 A GB 893878A GB 23396/58 A GB23396/58 A GB 23396/58A GB 2339658 A GB2339658 A GB 2339658A GB 893878 A GB893878 A GB 893878A
- Authority
- GB
- United Kingdom
- Prior art keywords
- ohms
- base region
- transistors
- collector
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910000838 Al alloy Inorganic materials 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
893,878. Transistors. SIEMENS-SCHUCKERTWERKE A.G. July 21, 1958 [July 23, 1957], No. 23396/58. Class 37. In a power transistor capable of operation at the voltage of public supply systems comprising a monocrystalline semi-conductor element consisting of two highly-doped regions of one conductivity type separated by step junctions from an intermediate less highly-doped base region of the opposite conductivity type of thickness W cm. and resistivity p ohm cm., the factor #/W has a value between one-half and twice W 1 #ohms, where #o=8.86.10<-14> A.Secs./ #0#Á . Ek V cm., # is the dielectric constant of the base region material, Á the mobility in cm.<2>/V.Sec. of majority carriers in the base region and Ek the critical electric field strength in Volts/em. of the base region material. Suitable values for #/W for silicon NPN transistors are 5000 to 20,000 ohms, for silicon PNP transistors 1500 to 6000 ohms. for germanium PNP transistors 500 to 2000 ohms, and for germanium NPN transistors 1250 to 5000 ohms. A typical transistor (Fig. 1) is made by alloying antimony doped gold to one face of a P-type silicon disc B to form a collector C and antimony doped gold and an annular aluminium or aluminium alloy member to the opposite face of the disc to form emitter E and base contact A respectively. The criteria for #/W set forth above correspond to the requirement W that avalanche breakdown of the collector junction and punch through between emitter and collector occur at about the same voltage.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE893878X | 1957-07-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB893878A true GB893878A (en) | 1962-04-18 |
Family
ID=6846837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB23396/58A Expired GB893878A (en) | 1957-07-23 | 1958-07-21 | Improvements in or relating to power transistors |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB893878A (en) |
-
1958
- 1958-07-21 GB GB23396/58A patent/GB893878A/en not_active Expired
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