DE1244310B - Elektrisch verstaerkendes Bauelement mit duennen isolierenden Festkoerperschichten - Google Patents
Elektrisch verstaerkendes Bauelement mit duennen isolierenden FestkoerperschichtenInfo
- Publication number
- DE1244310B DE1244310B DEJ23808A DEJ0023808A DE1244310B DE 1244310 B DE1244310 B DE 1244310B DE J23808 A DEJ23808 A DE J23808A DE J0023808 A DEJ0023808 A DE J0023808A DE 1244310 B DE1244310 B DE 1244310B
- Authority
- DE
- Germany
- Prior art keywords
- layer
- insulating layer
- layers
- thickness
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000007787 solid Substances 0.000 title claims description 6
- 230000003014 reinforcing effect Effects 0.000 title claims description 4
- 230000000694 effects Effects 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000003197 gene knockdown Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000019988 mead Nutrition 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
- H01J19/28—Non-electron-emitting electrodes; Screens
- H01J19/30—Non-electron-emitting electrodes; Screens characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2893/00—Discharge tubes and lamps
- H01J2893/0001—Electrodes and electrode systems suitable for discharge tubes or lamps
- H01J2893/0012—Constructional arrangements
- H01J2893/0019—Chemical composition and manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Bipolar Transistors (AREA)
- Insulating Bodies (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19944962A | 1962-06-01 | 1962-06-01 | |
US199450A US3202543A (en) | 1962-06-01 | 1962-06-01 | Method of forming a thin film grid |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1244310B true DE1244310B (de) | 1967-07-13 |
Family
ID=26894786
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEJ23808A Withdrawn DE1244310B (de) | 1962-06-01 | 1963-06-01 | Elektrisch verstaerkendes Bauelement mit duennen isolierenden Festkoerperschichten |
DEJ23809A Pending DE1246898B (de) | 1962-06-01 | 1963-06-01 | Verfahren zum Herstellen eines metallischen duennen Gitters fuer elektronische Festkoerperbauelemente |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEJ23809A Pending DE1246898B (de) | 1962-06-01 | 1963-06-01 | Verfahren zum Herstellen eines metallischen duennen Gitters fuer elektronische Festkoerperbauelemente |
Country Status (9)
Country | Link |
---|---|
US (1) | US3202543A (en:Method) |
BE (1) | BE633151A (en:Method) |
CH (2) | CH413114A (en:Method) |
DE (2) | DE1244310B (en:Method) |
DK (1) | DK126462B (en:Method) |
FR (2) | FR1357559A (en:Method) |
GB (1) | GB994241A (en:Method) |
NL (1) | NL293391A (en:Method) |
SE (1) | SE321990B (en:Method) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4022928A (en) * | 1975-05-22 | 1977-05-10 | Piwcyzk Bernhard P | Vacuum deposition methods and masking structure |
SU1005223A1 (ru) * | 1980-05-16 | 1983-03-15 | Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср | Полупроводниковое запоминающее устройство |
US4978558A (en) * | 1988-06-10 | 1990-12-18 | United Technologies Corporation | Method for applying diffusion coating masks |
DE10006738C2 (de) | 2000-02-15 | 2002-01-17 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung |
US7205578B2 (en) * | 2000-02-15 | 2007-04-17 | Osram Gmbh | Semiconductor component which emits radiation, and method for producing the same |
DE20111659U1 (de) * | 2000-05-23 | 2001-12-13 | OSRAM Opto Semiconductors GmbH & Co. oHG, 93049 Regensburg | Bauelement für die Optoelektronik |
KR100831843B1 (ko) * | 2006-11-07 | 2008-05-22 | 주식회사 실트론 | 금속층 위에 성장된 화합물 반도체 기판, 그 제조 방법 및이를 이용한 화합물 반도체 소자 |
EP2177644A1 (en) | 2008-10-14 | 2010-04-21 | Applied Materials, Inc. | Coating of masked substrates |
CN110981479B (zh) * | 2020-01-10 | 2022-03-01 | 陕西科技大学 | 一种高击穿的铁电陶瓷及其制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1266933A (fr) * | 1959-09-09 | 1961-07-17 | Ass Elect Ind | Perfectionnements aux dispositifs à semi-conducteurs |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB500342A (en) * | 1937-09-18 | 1939-02-07 | British Thomson Houston Co Ltd | Improvements relating to dry surface-contact electric rectifiers |
GB500344A (en) * | 1937-09-22 | 1939-02-07 | British Thomson Houston Co Ltd | Improvements in and relating to dry surface-contact electric rectifiers |
CH307776A (de) * | 1952-01-08 | 1955-06-15 | Ericsson Telefon Ab L M | Kontaktvorrichtung an einem Halbleiterelement. |
US2815462A (en) * | 1953-05-19 | 1957-12-03 | Electronique Sa Soc Gen | Method of forming a film supported a short distance from a surface and cathode-ray tube incorporating such film |
US2906637A (en) * | 1953-05-19 | 1959-09-29 | Electronique Soc Gen | Method of forming a film a short distance from a surface |
-
0
- NL NL293391D patent/NL293391A/xx unknown
- BE BE633151D patent/BE633151A/xx unknown
-
1962
- 1962-06-01 US US199450A patent/US3202543A/en not_active Expired - Lifetime
-
1963
- 1963-05-28 CH CH663063A patent/CH413114A/de unknown
- 1963-05-29 CH CH674863A patent/CH415861A/de unknown
- 1963-05-29 GB GB21427/63A patent/GB994241A/en not_active Expired
- 1963-05-31 SE SE6058/63A patent/SE321990B/xx unknown
- 1963-05-31 FR FR936681A patent/FR1357559A/fr not_active Expired
- 1963-05-31 FR FR936680A patent/FR1357558A/fr not_active Expired
- 1963-05-31 DK DK259363AA patent/DK126462B/da unknown
- 1963-06-01 DE DEJ23808A patent/DE1244310B/de not_active Withdrawn
- 1963-06-01 DE DEJ23809A patent/DE1246898B/de active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1266933A (fr) * | 1959-09-09 | 1961-07-17 | Ass Elect Ind | Perfectionnements aux dispositifs à semi-conducteurs |
Also Published As
Publication number | Publication date |
---|---|
DK126462B (da) | 1973-07-16 |
SE321990B (en:Method) | 1970-03-23 |
BE633151A (en:Method) | |
US3202543A (en) | 1965-08-24 |
DE1246898B (de) | 1967-08-10 |
NL293391A (en:Method) | |
FR1357558A (fr) | 1964-04-03 |
FR1357559A (fr) | 1964-04-03 |
GB994241A (en) | 1965-06-02 |
CH413114A (de) | 1966-05-15 |
CH415861A (de) | 1966-06-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
E77 | Valid patent as to the heymanns-index 1977 | ||
8339 | Ceased/non-payment of the annual fee |