CH307776A - Kontaktvorrichtung an einem Halbleiterelement. - Google Patents

Kontaktvorrichtung an einem Halbleiterelement.

Info

Publication number
CH307776A
CH307776A CH307776DA CH307776A CH 307776 A CH307776 A CH 307776A CH 307776D A CH307776D A CH 307776DA CH 307776 A CH307776 A CH 307776A
Authority
CH
Switzerland
Prior art keywords
semiconductor element
contact device
contact
semiconductor
Prior art date
Application number
Other languages
English (en)
Inventor
Telefonaktiebolaget L Ericsson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of CH307776A publication Critical patent/CH307776A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CH307776D 1952-01-08 1952-09-26 Kontaktvorrichtung an einem Halbleiterelement. CH307776A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE307776X 1952-01-08

Publications (1)

Publication Number Publication Date
CH307776A true CH307776A (de) 1955-06-15

Family

ID=20307567

Family Applications (1)

Application Number Title Priority Date Filing Date
CH307776D CH307776A (de) 1952-01-08 1952-09-26 Kontaktvorrichtung an einem Halbleiterelement.

Country Status (3)

Country Link
US (1) US2758263A (de)
CH (1) CH307776A (de)
GB (1) GB710245A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1207015B (de) * 1961-12-16 1965-12-16 Stanislas Teszner Transistor, insbesondere Unipolartransistor mit einem plattenfoermigen Halbleiterkoerper eines Leitungstyps und Verfahren zum Herstellen
DE1208824B (de) * 1960-11-21 1966-01-13 Tektronix Inc Verfahren zum Herstellen einer ohmschen metallischen Kontaktelektrode an einem Halbkoerper eines Halbleiterbauelements
DE1246898B (de) * 1962-06-01 1967-08-10 Ibm Verfahren zum Herstellen eines metallischen duennen Gitters fuer elektronische Festkoerperbauelemente

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2883592A (en) * 1955-12-30 1959-04-21 Gen Electric Encapsulated selenium rectifiers
NL255454A (de) * 1960-02-09
US3204159A (en) * 1960-09-14 1965-08-31 Bramley Jenny Rectifying majority carrier device
US3273029A (en) * 1963-08-23 1966-09-13 Hoffman Electronics Corp Method of attaching leads to a semiconductor body and the article formed thereby
US3312879A (en) * 1964-07-29 1967-04-04 North American Aviation Inc Semiconductor structure including opposite conductivity segments
US3448352A (en) * 1966-07-26 1969-06-03 Westinghouse Electric Corp Multiple electrical contact assembly for compression bonded electrical devices
US3577042A (en) * 1967-06-19 1971-05-04 Int Rectifier Corp Gate connection for controlled rectifiers
US4329701A (en) * 1978-03-20 1982-05-11 The Trane Company Semiconductor package
US5057903A (en) * 1989-07-17 1991-10-15 Microelectronics And Computer Technology Corporation Thermal heat sink encapsulated integrated circuit

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2386218A (en) * 1945-10-09 Rectifier electrode connection
US2046686A (en) * 1934-05-22 1936-07-07 Bell Telephone Labor Inc Asymmetrical electrical conductor
GB500342A (en) * 1937-09-18 1939-02-07 British Thomson Houston Co Ltd Improvements relating to dry surface-contact electric rectifiers
GB500344A (en) * 1937-09-22 1939-02-07 British Thomson Houston Co Ltd Improvements in and relating to dry surface-contact electric rectifiers
GB500180A (en) * 1937-09-23 1939-02-03 British Thomson Houston Co Ltd Improvements in and relating to dry surface contact electric rectifiers
GB529754A (en) * 1939-06-07 1940-11-27 Henriette Rupp Method for controlling and amplifying electric currents by the use of asymmetricallyconducting layers
US2345122A (en) * 1939-10-17 1944-03-28 Herrmann Heinrich Dry rectifier
US2444385A (en) * 1945-07-06 1948-06-29 Union Switch & Signal Co Alternating electric current rectifier
US2595052A (en) * 1948-07-23 1952-04-29 Sylvania Electric Prod Crystal amplifier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208824B (de) * 1960-11-21 1966-01-13 Tektronix Inc Verfahren zum Herstellen einer ohmschen metallischen Kontaktelektrode an einem Halbkoerper eines Halbleiterbauelements
DE1207015B (de) * 1961-12-16 1965-12-16 Stanislas Teszner Transistor, insbesondere Unipolartransistor mit einem plattenfoermigen Halbleiterkoerper eines Leitungstyps und Verfahren zum Herstellen
DE1246898B (de) * 1962-06-01 1967-08-10 Ibm Verfahren zum Herstellen eines metallischen duennen Gitters fuer elektronische Festkoerperbauelemente

Also Published As

Publication number Publication date
US2758263A (en) 1956-08-07
GB710245A (en) 1954-06-09

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