US2758263A - Contact device - Google Patents

Contact device Download PDF

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Publication number
US2758263A
US2758263A US313025A US31302552A US2758263A US 2758263 A US2758263 A US 2758263A US 313025 A US313025 A US 313025A US 31302552 A US31302552 A US 31302552A US 2758263 A US2758263 A US 2758263A
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US
United States
Prior art keywords
contact
layer
grid
crystal
contact device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US313025A
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English (en)
Inventor
Robillard Jean Jules Achille
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Application granted granted Critical
Publication of US2758263A publication Critical patent/US2758263A/en
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Definitions

  • the present invention relates to a contact device to be substituted for point electrodes on the crystal surface and wholly or partly eliminating the above mentioned disadvantages. According to a now preferred embodiment of the invention, this is achieved by the contact device forming a great number of contact points and being characterized by a close-meshed grid placed on the surface and by a conducting layer applied by thermionic evaporation on the grid and the parts of the surface exposed through the meshes of the grid, said layer being insulated from the grid.
  • FIG. 1 shows a plan view of a grid
  • Fig. 1a shows a section of the grid
  • Fig. 2 shows a section of a contact device for a transistor
  • Fig. 3 shows a contact device for a contact rectifier
  • Fig. 4 shows a perspective drawing of a transistor according to the invention.
  • a very fine screen 2,758,263 Patented 1 7, 11 956 of metal, suitably copper, and of the same kind :as is used for production of electrotypes for-typographical purposes, mayadvantageonsly be used.
  • .Such screens are produced by electrolytic precipitation and may suitably havean average thickness of 40, andcomprise about 20 meshes per mm each mesh having a diameter 'of ca. a. Such screens are produced on a large scale and .are commerciallly available.
  • .In the contact device shown in Fig. .2, 1 designates a germanium crystal, 2. a grid according to .Fig. 1 3 .an insulating layer, 4 a layer of contact metal and 5 a base electrode soldered to the germanium crystal.
  • the insulating layer 3 on .the ,grid2 consists -.of a thin layer of silicon dioxide produced by vacuum evaporation tOf silicon dioxide powder :in the following manner:
  • the screens are well cleaned by washing and electrolytic polishing at low current density, and fastened on a glass plate placed -in a vacuum vesselabout 20 cm. .abovecrucibles containing silicon dioxide powder.
  • Silicon dioxide .evaporatesat about 2300" C. and apressure of :10" mm. :Hginsuoh quantity, that an insulating :layer is formed hav- .ing a thickness vsui'licient to resist voltages to which the device is exposed in operation.
  • the side facing the glass plate .is not covered with insulating coating.
  • the glass plate itself is prepared so that no silicon dioxide layer is formed .on it.
  • the grid is placed with the uncoated surface against the germanium crystal 1, :whereaifter-a contact rmetal, suitably tungsten, is evaporated over the grid :and the .parts of the germanium crystal exposed through the meshes of the grid.
  • the evaporation is effected by means :of :a numfiber of tungsten wires heated electrically close :to the grid.
  • the evaporated layer 4 is .made 1 to 2 thick.
  • the vacuum evaporated contact points are very stable and are not sensitive to shocks, vibrations and moderate changes of temperature.
  • the contact between the germanium body and the vacuum evaporated contact points is further very intimate, which results in a reduction of noise.
  • the contact device according to Fig. 3 which is intended for rectifiers, differs from that shown in Fig. 2 only by the grid being completely insulated, so that only the vacuum evaporated contact points make contact with the germanium.
  • Fig. 4 shows a perspective View of a section of a transistor manufactured according to the invention.
  • the germanium crystal 1, soldered to the base plate 5, is inserted under pressure in a plastic envelope 6, in the bottom of which there is a contact 9 for the base plate.
  • the grid 2, insulated as described in connection with Fig. 2 is placed on the upper surface of the crystal 1, activated in a known manner, and pressed against said surface by means of a plastic ring 7, so as to be in close contact with the surface.
  • a tungsten layer evaporated in the same manner as described above.
  • the contact 8 is the outer connection to the vacuum evaporated contact points, whereas the contact to the grid is obtained by the tongue of the grid projecting through an aperture 10 in the envelope 6.
  • the aperture 12 may be sealed with plastic.
  • a transistor made according to the example of Fig. 4 had a diameter of 6 mm. and a height of 4 mm.
  • Transistors and contact rectifiers made according to the invention are very suitable for production on a large scale.
  • the different vacuum evaporating processes may be effected for a great number of elements simultaneously and the mounting is considerably simpler than for transistors with point electrodes.
  • Contact device characterized by the grid consisting of a screen of the kind used to produce electrotypes for typographical purposes.
  • a contact device in which said perforated layer comprises a skeleton of conductive material and an insulating coating surrounding said skeleton at least on its surfaces in contact with said second layer.
  • A' contact device for use in crystal contact rectifiers, in which said perforated layer comprises a skeleton of conductive material and an insulating coating surrounding the skeleton on its surfaces in contact with said second layer and its surfaces in intimate contact with said crystal surface;
  • a contact device characterized by said perforated layer being insulated from the crystal surface and the conducting surface by a layer of a vacuum evaporated silicon dioxide.
  • a contact device usable for example in crystal contact rectifiers and transistors comprising a crystal having a plane surface, an electrically conductive layer having a multitude of perforations disposed on said plane surface in intimate contact therewith, and a second jconductive layer on said first layer, said second layer being insulated from the first layer and in intimate contact with the areas of the crystal surface exposed by the perforations in said first layer thereby forming a multiude of contact points between the second layer and the crystal surface, all connected in parallel.
  • a contact device wherein the said first conductive layer is in direct contact with the crystal surface.
  • a contact device wherein the said perforated layer is insulated from the crystal surface in addition to being insulated from the second conductive layer.

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
US313025A 1952-01-08 1952-10-03 Contact device Expired - Lifetime US2758263A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE307776X 1952-01-08

Publications (1)

Publication Number Publication Date
US2758263A true US2758263A (en) 1956-08-07

Family

ID=20307567

Family Applications (1)

Application Number Title Priority Date Filing Date
US313025A Expired - Lifetime US2758263A (en) 1952-01-08 1952-10-03 Contact device

Country Status (3)

Country Link
US (1) US2758263A (de)
CH (1) CH307776A (de)
GB (1) GB710245A (de)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2883592A (en) * 1955-12-30 1959-04-21 Gen Electric Encapsulated selenium rectifiers
US3151007A (en) * 1960-02-09 1964-09-29 Clevite Corp Method of fabricating laminar semiconductor devices
US3204159A (en) * 1960-09-14 1965-08-31 Bramley Jenny Rectifying majority carrier device
US3273029A (en) * 1963-08-23 1966-09-13 Hoffman Electronics Corp Method of attaching leads to a semiconductor body and the article formed thereby
US3312879A (en) * 1964-07-29 1967-04-04 North American Aviation Inc Semiconductor structure including opposite conductivity segments
US3448352A (en) * 1966-07-26 1969-06-03 Westinghouse Electric Corp Multiple electrical contact assembly for compression bonded electrical devices
US3577042A (en) * 1967-06-19 1971-05-04 Int Rectifier Corp Gate connection for controlled rectifiers
US4329701A (en) * 1978-03-20 1982-05-11 The Trane Company Semiconductor package
US5057903A (en) * 1989-07-17 1991-10-15 Microelectronics And Computer Technology Corporation Thermal heat sink encapsulated integrated circuit

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL264072A (de) * 1960-11-21 1900-01-01
FR1317256A (fr) * 1961-12-16 1963-02-08 Teszner Stanislas Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets
BE633151A (de) * 1962-06-01

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2046686A (en) * 1934-05-22 1936-07-07 Bell Telephone Labor Inc Asymmetrical electrical conductor
GB500180A (en) * 1937-09-23 1939-02-03 British Thomson Houston Co Ltd Improvements in and relating to dry surface contact electric rectifiers
GB500342A (en) * 1937-09-18 1939-02-07 British Thomson Houston Co Ltd Improvements relating to dry surface-contact electric rectifiers
GB500344A (en) * 1937-09-22 1939-02-07 British Thomson Houston Co Ltd Improvements in and relating to dry surface-contact electric rectifiers
GB529754A (en) * 1939-06-07 1940-11-27 Henriette Rupp Method for controlling and amplifying electric currents by the use of asymmetricallyconducting layers
US2345122A (en) * 1939-10-17 1944-03-28 Herrmann Heinrich Dry rectifier
US2386218A (en) * 1945-10-09 Rectifier electrode connection
US2444385A (en) * 1945-07-06 1948-06-29 Union Switch & Signal Co Alternating electric current rectifier
US2595052A (en) * 1948-07-23 1952-04-29 Sylvania Electric Prod Crystal amplifier

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2386218A (en) * 1945-10-09 Rectifier electrode connection
US2046686A (en) * 1934-05-22 1936-07-07 Bell Telephone Labor Inc Asymmetrical electrical conductor
GB500342A (en) * 1937-09-18 1939-02-07 British Thomson Houston Co Ltd Improvements relating to dry surface-contact electric rectifiers
GB500344A (en) * 1937-09-22 1939-02-07 British Thomson Houston Co Ltd Improvements in and relating to dry surface-contact electric rectifiers
GB500180A (en) * 1937-09-23 1939-02-03 British Thomson Houston Co Ltd Improvements in and relating to dry surface contact electric rectifiers
GB529754A (en) * 1939-06-07 1940-11-27 Henriette Rupp Method for controlling and amplifying electric currents by the use of asymmetricallyconducting layers
US2345122A (en) * 1939-10-17 1944-03-28 Herrmann Heinrich Dry rectifier
US2444385A (en) * 1945-07-06 1948-06-29 Union Switch & Signal Co Alternating electric current rectifier
US2595052A (en) * 1948-07-23 1952-04-29 Sylvania Electric Prod Crystal amplifier

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2883592A (en) * 1955-12-30 1959-04-21 Gen Electric Encapsulated selenium rectifiers
US3151007A (en) * 1960-02-09 1964-09-29 Clevite Corp Method of fabricating laminar semiconductor devices
US3204159A (en) * 1960-09-14 1965-08-31 Bramley Jenny Rectifying majority carrier device
US3273029A (en) * 1963-08-23 1966-09-13 Hoffman Electronics Corp Method of attaching leads to a semiconductor body and the article formed thereby
US3312879A (en) * 1964-07-29 1967-04-04 North American Aviation Inc Semiconductor structure including opposite conductivity segments
US3448352A (en) * 1966-07-26 1969-06-03 Westinghouse Electric Corp Multiple electrical contact assembly for compression bonded electrical devices
US3577042A (en) * 1967-06-19 1971-05-04 Int Rectifier Corp Gate connection for controlled rectifiers
US4329701A (en) * 1978-03-20 1982-05-11 The Trane Company Semiconductor package
US5057903A (en) * 1989-07-17 1991-10-15 Microelectronics And Computer Technology Corporation Thermal heat sink encapsulated integrated circuit

Also Published As

Publication number Publication date
CH307776A (de) 1955-06-15
GB710245A (en) 1954-06-09

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