CH319749A - Schaltungsanordnung mit einem Transistor - Google Patents
Schaltungsanordnung mit einem TransistorInfo
- Publication number
- CH319749A CH319749A CH319749DA CH319749A CH 319749 A CH319749 A CH 319749A CH 319749D A CH319749D A CH 319749DA CH 319749 A CH319749 A CH 319749A
- Authority
- CH
- Switzerland
- Prior art keywords
- transistor
- circuit arrangement
- arrangement
- circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C1/00—Amplitude modulation
- H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C5/00—Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US294298A US2695930A (en) | 1952-06-19 | 1952-06-19 | High-frequency transistor circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
CH319749A true CH319749A (de) | 1957-02-28 |
Family
ID=23132797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH319749D CH319749A (de) | 1952-06-19 | 1953-06-18 | Schaltungsanordnung mit einem Transistor |
Country Status (6)
Country | Link |
---|---|
US (1) | US2695930A (de) |
BE (1) | BE520777A (de) |
CH (1) | CH319749A (de) |
FR (1) | FR1066306A (de) |
GB (1) | GB748414A (de) |
NL (1) | NL93080C (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1104617B (de) * | 1959-06-18 | 1961-04-13 | Siemens Ag | Verfahren zum elektrolytischen AEtzen einer Halbleiteranordnung mit einem Halbleiterkoerper aus im wesentlichen einkristallinem Halbleitermaterial |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2862184A (en) * | 1958-11-25 | Semiconductor translating device | ||
US2901554A (en) * | 1953-01-19 | 1959-08-25 | Gen Electric | Semiconductor device and apparatus |
US2982918A (en) * | 1953-11-09 | 1961-05-02 | Philips Corp | Amplifying-circuit arrangement |
US2886748A (en) * | 1954-03-15 | 1959-05-12 | Rca Corp | Semiconductor devices |
GB810946A (en) * | 1954-03-26 | 1959-03-25 | Philco Corp | Electrolytic shaping of semiconductive bodies |
US2976433A (en) * | 1954-05-26 | 1961-03-21 | Rca Corp | Radioactive battery employing semiconductors |
US2932748A (en) * | 1954-07-26 | 1960-04-12 | Rca Corp | Semiconductor devices |
US2867763A (en) * | 1954-08-03 | 1959-01-06 | Siemens Ag | System for controlling or regulating an electric motor by pulses of variable pulsing ratio |
NL199921A (de) * | 1954-08-27 | |||
US2893929A (en) * | 1955-08-03 | 1959-07-07 | Philco Corp | Method for electroplating selected regions of n-type semiconductive bodies |
DE1092130B (de) * | 1955-12-29 | 1960-11-03 | Honeywell Regulator Co | Flaechentransistor mit einem plaettchen-foermigen Halbleiterkoerper |
US2889417A (en) * | 1956-01-26 | 1959-06-02 | Honeywell Regulator Co | Tetrode transistor bias circuit |
US3035183A (en) * | 1956-06-14 | 1962-05-15 | Siemens And Halske Ag Berlin A | Monostable, bistable double base diode circuit utilizing hall effect to perform switching function |
DE1041165B (de) * | 1956-06-14 | 1958-10-16 | Siemens Ag | Fadenhalbleiteranordnung mit zwei sperrfreien Basisanschluessen an den Fadenenden |
US2907897A (en) * | 1956-07-09 | 1959-10-06 | Howard H Sander | Pressure transducer |
US3048797A (en) * | 1957-04-30 | 1962-08-07 | Rca Corp | Semiconductor modulator |
US2943269A (en) * | 1957-07-08 | 1960-06-28 | Sylvania Electric Prod | Semiconductor switching device |
US3086126A (en) * | 1957-09-16 | 1963-04-16 | Bendix Corp | Semiconductor switching circuit |
BE553769A (de) * | 1957-11-29 | |||
DE1071232B (de) * | 1957-12-23 | 1959-12-17 | Radio Corporation of America New York, N. Y. (V. St. A.) | Verfahren zur Herstellung einer Halbleiteranordnung mit einem Halbleiterkörper mit mindestens zwei Elektroden |
US2963411A (en) * | 1957-12-24 | 1960-12-06 | Ibm | Process for removing shorts from p-n junctions |
DE1115643B (de) * | 1958-05-09 | 1961-10-19 | Reich Robert W | Zeithaltendes elektrisches Geraet, insbesondere elektrische Uhr |
US3096262A (en) * | 1958-10-23 | 1963-07-02 | Shockley William | Method of making thin slices of semiconductive material |
US3050698A (en) * | 1960-02-12 | 1962-08-21 | Bell Telephone Labor Inc | Semiconductor hall effect devices |
US3066259A (en) * | 1961-01-03 | 1962-11-27 | Gen Dynamics Corp | Suppressed carrier transmitter |
US3293541A (en) * | 1964-04-02 | 1966-12-20 | North American Aviation Inc | Magnetic sensing device |
US3671793A (en) * | 1969-09-16 | 1972-06-20 | Itt | High frequency transistor structure having an impedance transforming network incorporated on the semiconductor chip |
US3693056A (en) * | 1971-01-29 | 1972-09-19 | Siemens Ag | Method for amplification of high-frequency electrical signals in a transistor |
US3939366A (en) * | 1971-02-19 | 1976-02-17 | Agency Of Industrial Science & Technology | Method of converting radioactive energy to electric energy and device for performing the same |
JPS5228878A (en) * | 1975-08-29 | 1977-03-04 | Nippon Gakki Seizo Kk | Transistor for small signal |
EP0018556B1 (de) * | 1979-05-02 | 1984-08-08 | International Business Machines Corporation | Anordnung und Verfahren zum selektiven, elektrochemischen Ätzen |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2563503A (en) * | 1951-08-07 | Transistor | ||
US2569347A (en) * | 1948-06-26 | 1951-09-25 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive material |
NL147218C (de) * | 1948-08-14 | |||
US2560594A (en) * | 1948-09-24 | 1951-07-17 | Bell Telephone Labor Inc | Semiconductor translator and method of making it |
NL79529C (de) * | 1948-09-24 | |||
US2600500A (en) * | 1948-09-24 | 1952-06-17 | Bell Telephone Labor Inc | Semiconductor signal translating device with controlled carrier transit times |
US2553491A (en) * | 1950-04-27 | 1951-05-15 | Bell Telephone Labor Inc | Acoustic transducer utilizing semiconductors |
-
0
- NL NL93080D patent/NL93080C/xx active
- BE BE520777D patent/BE520777A/xx unknown
-
1952
- 1952-06-19 US US294298A patent/US2695930A/en not_active Expired - Lifetime
- 1952-09-12 FR FR1066306D patent/FR1066306A/fr not_active Expired
-
1953
- 1953-06-12 GB GB16230/53A patent/GB748414A/en not_active Expired
- 1953-06-18 CH CH319749D patent/CH319749A/de unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1104617B (de) * | 1959-06-18 | 1961-04-13 | Siemens Ag | Verfahren zum elektrolytischen AEtzen einer Halbleiteranordnung mit einem Halbleiterkoerper aus im wesentlichen einkristallinem Halbleitermaterial |
Also Published As
Publication number | Publication date |
---|---|
BE520777A (de) | |
NL93080C (de) | |
FR1066306A (fr) | 1954-06-03 |
GB748414A (en) | 1956-05-02 |
US2695930A (en) | 1954-11-30 |
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