CH319749A - Schaltungsanordnung mit einem Transistor - Google Patents

Schaltungsanordnung mit einem Transistor

Info

Publication number
CH319749A
CH319749A CH319749DA CH319749A CH 319749 A CH319749 A CH 319749A CH 319749D A CH319749D A CH 319749DA CH 319749 A CH319749 A CH 319749A
Authority
CH
Switzerland
Prior art keywords
transistor
circuit arrangement
arrangement
circuit
Prior art date
Application number
Other languages
English (en)
Inventor
Lee Wallace Robert
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH319749A publication Critical patent/CH319749A/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C5/00—Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
CH319749D 1952-06-19 1953-06-18 Schaltungsanordnung mit einem Transistor CH319749A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US294298A US2695930A (en) 1952-06-19 1952-06-19 High-frequency transistor circuit

Publications (1)

Publication Number Publication Date
CH319749A true CH319749A (de) 1957-02-28

Family

ID=23132797

Family Applications (1)

Application Number Title Priority Date Filing Date
CH319749D CH319749A (de) 1952-06-19 1953-06-18 Schaltungsanordnung mit einem Transistor

Country Status (6)

Country Link
US (1) US2695930A (de)
BE (1) BE520777A (de)
CH (1) CH319749A (de)
FR (1) FR1066306A (de)
GB (1) GB748414A (de)
NL (1) NL93080C (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1104617B (de) * 1959-06-18 1961-04-13 Siemens Ag Verfahren zum elektrolytischen AEtzen einer Halbleiteranordnung mit einem Halbleiterkoerper aus im wesentlichen einkristallinem Halbleitermaterial

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2862184A (en) * 1958-11-25 Semiconductor translating device
US2901554A (en) * 1953-01-19 1959-08-25 Gen Electric Semiconductor device and apparatus
US2982918A (en) * 1953-11-09 1961-05-02 Philips Corp Amplifying-circuit arrangement
US2886748A (en) * 1954-03-15 1959-05-12 Rca Corp Semiconductor devices
GB810946A (en) * 1954-03-26 1959-03-25 Philco Corp Electrolytic shaping of semiconductive bodies
US2976433A (en) * 1954-05-26 1961-03-21 Rca Corp Radioactive battery employing semiconductors
US2932748A (en) * 1954-07-26 1960-04-12 Rca Corp Semiconductor devices
US2867763A (en) * 1954-08-03 1959-01-06 Siemens Ag System for controlling or regulating an electric motor by pulses of variable pulsing ratio
NL199921A (de) * 1954-08-27
US2893929A (en) * 1955-08-03 1959-07-07 Philco Corp Method for electroplating selected regions of n-type semiconductive bodies
DE1092130B (de) * 1955-12-29 1960-11-03 Honeywell Regulator Co Flaechentransistor mit einem plaettchen-foermigen Halbleiterkoerper
US2889417A (en) * 1956-01-26 1959-06-02 Honeywell Regulator Co Tetrode transistor bias circuit
DE1041165B (de) * 1956-06-14 1958-10-16 Siemens Ag Fadenhalbleiteranordnung mit zwei sperrfreien Basisanschluessen an den Fadenenden
US3035183A (en) * 1956-06-14 1962-05-15 Siemens And Halske Ag Berlin A Monostable, bistable double base diode circuit utilizing hall effect to perform switching function
US2907897A (en) * 1956-07-09 1959-10-06 Howard H Sander Pressure transducer
US3048797A (en) * 1957-04-30 1962-08-07 Rca Corp Semiconductor modulator
US2943269A (en) * 1957-07-08 1960-06-28 Sylvania Electric Prod Semiconductor switching device
US3086126A (en) * 1957-09-16 1963-04-16 Bendix Corp Semiconductor switching circuit
BE553769A (de) * 1957-11-29
DE1071232B (de) * 1957-12-23 1959-12-17 Radio Corporation of America New York, N. Y. (V. St. A.) Verfahren zur Herstellung einer Halbleiteranordnung mit einem Halbleiterkörper mit mindestens zwei Elektroden
US2963411A (en) * 1957-12-24 1960-12-06 Ibm Process for removing shorts from p-n junctions
DE1115643B (de) * 1958-05-09 1961-10-19 Reich Robert W Zeithaltendes elektrisches Geraet, insbesondere elektrische Uhr
US3096262A (en) * 1958-10-23 1963-07-02 Shockley William Method of making thin slices of semiconductive material
US3050698A (en) * 1960-02-12 1962-08-21 Bell Telephone Labor Inc Semiconductor hall effect devices
US3066259A (en) * 1961-01-03 1962-11-27 Gen Dynamics Corp Suppressed carrier transmitter
US3293541A (en) * 1964-04-02 1966-12-20 North American Aviation Inc Magnetic sensing device
US3671793A (en) * 1969-09-16 1972-06-20 Itt High frequency transistor structure having an impedance transforming network incorporated on the semiconductor chip
US3693056A (en) * 1971-01-29 1972-09-19 Siemens Ag Method for amplification of high-frequency electrical signals in a transistor
US3939366A (en) * 1971-02-19 1976-02-17 Agency Of Industrial Science & Technology Method of converting radioactive energy to electric energy and device for performing the same
JPS5228878A (en) * 1975-08-29 1977-03-04 Nippon Gakki Seizo Kk Transistor for small signal
EP0018556B1 (de) * 1979-05-02 1984-08-08 International Business Machines Corporation Anordnung und Verfahren zum selektiven, elektrochemischen Ätzen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2563503A (en) * 1951-08-07 Transistor
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
NL147218C (de) * 1948-08-14
US2600500A (en) * 1948-09-24 1952-06-17 Bell Telephone Labor Inc Semiconductor signal translating device with controlled carrier transit times
BE490958A (de) * 1948-09-24
US2560594A (en) * 1948-09-24 1951-07-17 Bell Telephone Labor Inc Semiconductor translator and method of making it
US2553491A (en) * 1950-04-27 1951-05-15 Bell Telephone Labor Inc Acoustic transducer utilizing semiconductors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1104617B (de) * 1959-06-18 1961-04-13 Siemens Ag Verfahren zum elektrolytischen AEtzen einer Halbleiteranordnung mit einem Halbleiterkoerper aus im wesentlichen einkristallinem Halbleitermaterial

Also Published As

Publication number Publication date
FR1066306A (fr) 1954-06-03
NL93080C (de)
GB748414A (en) 1956-05-02
US2695930A (en) 1954-11-30
BE520777A (de)

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