FR1357558A - élément de circuit actif utilisant des pellicules minces - Google Patents

élément de circuit actif utilisant des pellicules minces

Info

Publication number
FR1357558A
FR1357558A FR936680A FR936680A FR1357558A FR 1357558 A FR1357558 A FR 1357558A FR 936680 A FR936680 A FR 936680A FR 936680 A FR936680 A FR 936680A FR 1357558 A FR1357558 A FR 1357558A
Authority
FR
France
Prior art keywords
circuit element
thin films
active circuit
active
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR936680A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1357558A publication Critical patent/FR1357558A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/28—Non-electron-emitting electrodes; Screens
    • H01J19/30—Non-electron-emitting electrodes; Screens characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2893/00—Discharge tubes and lamps
    • H01J2893/0001—Electrodes and electrode systems suitable for discharge tubes or lamps
    • H01J2893/0012—Constructional arrangements
    • H01J2893/0019—Chemical composition and manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Bipolar Transistors (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Insulating Bodies (AREA)
FR936680A 1962-06-01 1963-05-31 élément de circuit actif utilisant des pellicules minces Expired FR1357558A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19944962A 1962-06-01 1962-06-01
US199450A US3202543A (en) 1962-06-01 1962-06-01 Method of forming a thin film grid

Publications (1)

Publication Number Publication Date
FR1357558A true FR1357558A (fr) 1964-04-03

Family

ID=26894786

Family Applications (2)

Application Number Title Priority Date Filing Date
FR936681A Expired FR1357559A (fr) 1962-06-01 1963-05-31 Procédé de formation d'une grille à pellicule mince
FR936680A Expired FR1357558A (fr) 1962-06-01 1963-05-31 élément de circuit actif utilisant des pellicules minces

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR936681A Expired FR1357559A (fr) 1962-06-01 1963-05-31 Procédé de formation d'une grille à pellicule mince

Country Status (9)

Country Link
US (1) US3202543A (fr)
BE (1) BE633151A (fr)
CH (2) CH413114A (fr)
DE (2) DE1246898B (fr)
DK (1) DK126462B (fr)
FR (2) FR1357559A (fr)
GB (1) GB994241A (fr)
NL (1) NL293391A (fr)
SE (1) SE321990B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3118799A1 (de) * 1980-05-16 1982-03-18 Institut radiotechniki i elektroniki Akademii Nauk SSSR, Moskva Halbleiterspeicher

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4022928A (en) * 1975-05-22 1977-05-10 Piwcyzk Bernhard P Vacuum deposition methods and masking structure
US4978558A (en) * 1988-06-10 1990-12-18 United Technologies Corporation Method for applying diffusion coating masks
DE10006738C2 (de) * 2000-02-15 2002-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
WO2001061765A1 (fr) * 2000-02-15 2001-08-23 Osram Opto Semiconductors Gmbh Composant semi-conducteur emetteur de rayonnements et son procede de production
DE20111659U1 (de) * 2000-05-23 2001-12-13 OSRAM Opto Semiconductors GmbH & Co. oHG, 93049 Regensburg Bauelement für die Optoelektronik
KR100831843B1 (ko) * 2006-11-07 2008-05-22 주식회사 실트론 금속층 위에 성장된 화합물 반도체 기판, 그 제조 방법 및이를 이용한 화합물 반도체 소자
EP2177644A1 (fr) 2008-10-14 2010-04-21 Applied Materials, Inc. Revêtement de substrats masqués
CN110981479B (zh) * 2020-01-10 2022-03-01 陕西科技大学 一种高击穿的铁电陶瓷及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB500342A (en) * 1937-09-18 1939-02-07 British Thomson Houston Co Ltd Improvements relating to dry surface-contact electric rectifiers
GB500344A (en) * 1937-09-22 1939-02-07 British Thomson Houston Co Ltd Improvements in and relating to dry surface-contact electric rectifiers
CH307776A (de) * 1952-01-08 1955-06-15 Ericsson Telefon Ab L M Kontaktvorrichtung an einem Halbleiterelement.
US2906637A (en) * 1953-05-19 1959-09-29 Electronique Soc Gen Method of forming a film a short distance from a surface
US2815462A (en) * 1953-05-19 1957-12-03 Electronique Sa Soc Gen Method of forming a film supported a short distance from a surface and cathode-ray tube incorporating such film
FR1266933A (fr) * 1959-09-09 1961-07-17 Ass Elect Ind Perfectionnements aux dispositifs à semi-conducteurs

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3118799A1 (de) * 1980-05-16 1982-03-18 Institut radiotechniki i elektroniki Akademii Nauk SSSR, Moskva Halbleiterspeicher

Also Published As

Publication number Publication date
CH413114A (de) 1966-05-15
SE321990B (fr) 1970-03-23
DE1246898B (de) 1967-08-10
FR1357559A (fr) 1964-04-03
CH415861A (de) 1966-06-30
NL293391A (fr)
DE1244310B (de) 1967-07-13
DK126462B (da) 1973-07-16
BE633151A (fr)
GB994241A (en) 1965-06-02
US3202543A (en) 1965-08-24

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