DE1243641B - Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze - Google Patents

Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze

Info

Publication number
DE1243641B
DE1243641B DES82821A DES0082821A DE1243641B DE 1243641 B DE1243641 B DE 1243641B DE S82821 A DES82821 A DE S82821A DE S0082821 A DES0082821 A DE S0082821A DE 1243641 B DE1243641 B DE 1243641B
Authority
DE
Germany
Prior art keywords
melt
rod
semiconductor
heated
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES82821A
Other languages
German (de)
English (en)
Inventor
Dr Rer Nat Wolfgang Keller
Dr Phil Eberhard Spenke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES82821A priority Critical patent/DE1243641B/de
Priority to CH1017563A priority patent/CH420071A/de
Priority to US326945A priority patent/US3261722A/en
Priority to GB49022/63A priority patent/GB1059960A/en
Priority to BE641091A priority patent/BE641091A/xx
Publication of DE1243641B publication Critical patent/DE1243641B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DES82821A 1962-12-12 1962-12-12 Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze Pending DE1243641B (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DES82821A DE1243641B (de) 1962-12-12 1962-12-12 Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze
CH1017563A CH420071A (de) 1962-12-12 1963-08-16 Verfahren zur Herstellung von Halbleiterstäben durch Ziehen aus der Schmelze
US326945A US3261722A (en) 1962-12-12 1963-11-29 Process for preparing semiconductor ingots within a depression
GB49022/63A GB1059960A (en) 1962-12-12 1963-12-11 The production of semi-conductor rods
BE641091A BE641091A (cs) 1962-12-12 1963-12-11

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES82821A DE1243641B (de) 1962-12-12 1962-12-12 Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze

Publications (1)

Publication Number Publication Date
DE1243641B true DE1243641B (de) 1967-07-06

Family

ID=7510627

Family Applications (1)

Application Number Title Priority Date Filing Date
DES82821A Pending DE1243641B (de) 1962-12-12 1962-12-12 Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze

Country Status (5)

Country Link
US (1) US3261722A (cs)
BE (1) BE641091A (cs)
CH (1) CH420071A (cs)
DE (1) DE1243641B (cs)
GB (1) GB1059960A (cs)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3470039A (en) * 1966-12-21 1969-09-30 Texas Instruments Inc Continuous junction growth
DE1519908A1 (de) * 1966-12-30 1970-07-02 Siemens Ag Vorrichtung zum Herstellen eines kristallinen Stabes durch tiegelfreies Zonenschmelzen
US3607114A (en) * 1969-10-13 1971-09-21 Siemens Ag Apparatus for producing a monocrystalline rod, particularly of semiconductor material
US3776703A (en) * 1970-11-30 1973-12-04 Texas Instruments Inc Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil
US4650540A (en) * 1975-07-09 1987-03-17 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
US4575401A (en) * 1984-06-07 1986-03-11 Wedtech Corp Method of and apparatus for the drawing of bars of monocrystalline silicon
US4548670A (en) * 1984-07-20 1985-10-22 Wedtech Corp. Silicon melting and evaporation method for high purity applications
US5958133A (en) * 1996-01-29 1999-09-28 General Signal Corporation Material handling system for growing high-purity crystals

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE973231C (de) * 1953-01-20 1959-12-24 Telefunken Gmbh Verfahren zur Herstellung von Einkristallen durch Ziehen aus einer Schmelze

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE552391A (cs) * 1952-08-01
US2793103A (en) * 1954-02-24 1957-05-21 Siemens Ag Method for producing rod-shaped bodies of crystalline material
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
BE542056A (cs) * 1954-10-15
US2979386A (en) * 1956-08-02 1961-04-11 Shockley William Crystal growing apparatus
US2890139A (en) * 1956-12-10 1959-06-09 Shockley William Semi-conductive material purification method and apparatus
NL237834A (cs) * 1958-04-09
US3084037A (en) * 1960-01-08 1963-04-02 Temescal Metallurgical Corp Gaseous ion purification process
US3160497A (en) * 1962-11-15 1964-12-08 Loung Pai Yen Method of melting refractory metals using a double heating process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE973231C (de) * 1953-01-20 1959-12-24 Telefunken Gmbh Verfahren zur Herstellung von Einkristallen durch Ziehen aus einer Schmelze

Also Published As

Publication number Publication date
BE641091A (cs) 1964-06-11
CH420071A (de) 1966-09-15
GB1059960A (en) 1967-02-22
US3261722A (en) 1966-07-19

Similar Documents

Publication Publication Date Title
DE944209C (de) Verfahren zur Herstellung von Halbleiterkoerpern
DE1023889B (de) Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
DE1210415B (de) Verfahren zum tiegellosen Zonenschmelzen eines durch Ziehen aus der Schmelze erhaltenen Halbleiterstabes
DE1193022B (de) Verfahren zur Herstellung von reinstem Silicium
DE19700516A1 (de) Einkristall-Ziehvorrichtung
DE2639707A1 (de) Verfahren zum regeln des sauerstoffgehalts beim ziehen von siliciumkristallen
DE1243641B (de) Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze
DE10102126A1 (de) Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Silicium
DE3333960A1 (de) Verfahren zur herstellung von versetzungsfreien einkristallstaeben aus silicium
DE1719024A1 (de) Verfahren zur Herstellung eines Stabes aus Halbleitermaterial fuer elektronische Zwecke
DE69009831T2 (de) Verfahren zur Züchtung eines Einkristalls.
DE19529481A1 (de) Verfahren und Vorrichtung zur Herstellung von Einkristallen
DE19700403B4 (de) Einkristallziehvorrichtung
DE2059360A1 (de) Verfahren zum Herstellen homogener Staeben aus Halbleitermaterial
EP0438390A1 (de) Verfahren und vorrichtung zur züchtung von kristallen nach der czochralski-methode.
DE1263698B (de) Verfahren zum tiegelfreien Zonenschmelzen
DE1251272B (de) Verfahren und Vorrichtung zum Herstellen eines Stabes durch Aufziehen aus einer Schmelze
DE1767394A1 (de) Verfahren zum Herstellen von Mg-Al-Spinellkristallen mit stoechiometrischer Zusammensetzung fuer integrierte Schaltungen
DE1254590B (de) Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial, insbesondere von Silicium
DE19806949A1 (de) Verfahren zum Steuern von Kristallzüchtungsprozessen
DE19700517B4 (de) Einkristallwachstumsverfahren
DE1209997B (de) Verfahren zur Herstellung von Einkristallen aus schmelzbarem Material
DE1278413B (de) Verfahren zum Ziehen duenner stabfoermiger Halbleiterkristalle aus einer Halbleiterschmelze
DE1240825B (de) Verfahren zum Ziehen von Einkristallen aus Halbleitermaterial
DE1113682B (de) Verfahren zum Ziehen von Einkristallen, insbesondere aus Halbleitermaterial aus einer an einem Rohr haengenden Schmelze