DE1219127B - Verfahren zur Herstellung eines legierten PN-UEbergangs in einer Halbleiterscheibe - Google Patents

Verfahren zur Herstellung eines legierten PN-UEbergangs in einer Halbleiterscheibe

Info

Publication number
DE1219127B
DE1219127B DER28590A DER0028590A DE1219127B DE 1219127 B DE1219127 B DE 1219127B DE R28590 A DER28590 A DE R28590A DE R0028590 A DER0028590 A DE R0028590A DE 1219127 B DE1219127 B DE 1219127B
Authority
DE
Germany
Prior art keywords
alloy metal
semiconductor wafer
semiconductor
germanium
vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DER28590A
Other languages
German (de)
English (en)
Inventor
Herbert Nelson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE1219127B publication Critical patent/DE1219127B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
DER28590A 1959-09-29 1960-08-22 Verfahren zur Herstellung eines legierten PN-UEbergangs in einer Halbleiterscheibe Pending DE1219127B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84318659A 1959-09-29 1959-09-29

Publications (1)

Publication Number Publication Date
DE1219127B true DE1219127B (de) 1966-06-16

Family

ID=25289283

Family Applications (1)

Application Number Title Priority Date Filing Date
DER28590A Pending DE1219127B (de) 1959-09-29 1960-08-22 Verfahren zur Herstellung eines legierten PN-UEbergangs in einer Halbleiterscheibe

Country Status (6)

Country Link
CH (1) CH397871A (enrdf_load_stackoverflow)
DE (1) DE1219127B (enrdf_load_stackoverflow)
DK (1) DK119168B (enrdf_load_stackoverflow)
ES (1) ES261334A1 (enrdf_load_stackoverflow)
GB (1) GB952361A (enrdf_load_stackoverflow)
NL (1) NL256342A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1260032B (de) 1962-05-14 1968-02-01 Rca Corp Verfahren zur Bildung einer gleichrichtenden Sperrschicht in einem Halbleiterscheibchen

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577131A (en) * 1980-06-16 1982-01-14 Junichi Nishizawa Manufacture of p-n junction

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
DE961913C (de) * 1952-08-22 1957-04-11 Gen Electric Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Systemen mit p-n-UEbergaengen
GB781061A (en) * 1952-07-29 1957-08-14 Licentia Gmbh An arrangement for the cooling of electric unsymmetrically conductive systems with semi-conductive materials
US2821493A (en) * 1954-03-18 1958-01-28 Hughes Aircraft Co Fused junction transistors with regrown base regions
DE1062823B (de) * 1957-07-13 1959-08-06 Telefunken Gmbh Verfahren zur Herstellung von Kristalloden des Legierungstyps
FR1186637A (fr) * 1956-11-23 1959-08-28 Pye Ltd Perfectionnements aux dispositifs semi-conducteurs
DE1115367B (de) 1959-09-12 1961-10-19 Philips Nv Verfahren und Legierungsform zum Herstellen einer Halbleiteranordnung durch Aufschmelzen einer Elektrode auf einen Halbleiterkoerper

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
GB781061A (en) * 1952-07-29 1957-08-14 Licentia Gmbh An arrangement for the cooling of electric unsymmetrically conductive systems with semi-conductive materials
DE961913C (de) * 1952-08-22 1957-04-11 Gen Electric Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Systemen mit p-n-UEbergaengen
US2821493A (en) * 1954-03-18 1958-01-28 Hughes Aircraft Co Fused junction transistors with regrown base regions
FR1186637A (fr) * 1956-11-23 1959-08-28 Pye Ltd Perfectionnements aux dispositifs semi-conducteurs
DE1062823B (de) * 1957-07-13 1959-08-06 Telefunken Gmbh Verfahren zur Herstellung von Kristalloden des Legierungstyps
DE1115367B (de) 1959-09-12 1961-10-19 Philips Nv Verfahren und Legierungsform zum Herstellen einer Halbleiteranordnung durch Aufschmelzen einer Elektrode auf einen Halbleiterkoerper

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1260032B (de) 1962-05-14 1968-02-01 Rca Corp Verfahren zur Bildung einer gleichrichtenden Sperrschicht in einem Halbleiterscheibchen

Also Published As

Publication number Publication date
GB952361A (en) 1964-03-18
CH397871A (de) 1965-08-31
DK119168B (da) 1970-11-23
NL256342A (enrdf_load_stackoverflow)
ES261334A1 (es) 1961-03-16

Similar Documents

Publication Publication Date Title
EP1739210B1 (de) Verfahren zur Herstellung von dotierten Halbleiter-Einkristallen, und III-V-Halbleiter-Einkristall
DE112014002133B4 (de) Herstellungsverfahren für einen Einkristall, Silicium-Einkristall, Verfahren zur Herstellung eines Siliciumwafers, Herstellungsverfahren für einen Silicium-Epitaxialwafer, sowie Silicium-Epitaxialwafer
DE1063007B (de) Verfahren zum Fortbewegen eines fest-fluessigen Grenzbereichs durch einen Koerper aus schmelzbarem Material zwecks Durchfuehrung einer gelenkten Diffusion
DE1135671B (de) Verfahren zum Herstellen eines pn-UEbergangs und/oder eines Gradienten eines elektrisch wirksamen Elements in einem Halbleiterkristall
DE2006189A1 (de) Verfahren zum Aufbringen aufeinanderfolgender Epitaxialschichten aus kristallinem Halbleitermaterial auf ein Substrat aus der Flüssigkeitsphase
DE1955253A1 (de) Verfahren zur Herstellung von Halbleiterbauelementen
DE1803731C3 (de) Verfahren zum Kristallisieren einer binären Halbleiterverbindung
DE1084381B (de) Legierungsverfahren zur Herstellung von pn-UEbergaengen an der Oberflaeche eines Halbleiterkoerpers
DE2305019C3 (de) Verfahren und Vorrichtung zum epitaktischen Aufwachsen von Halbleiterschichten mittels Flüssigphasen-Epitaxie
DE2616700C2 (de) Verfahren zum Ausbilden einer dünnen Schicht aus einem Halbleitermaterial der Gruppen III-V durch epitaxiales Aufwachsen, sowie Vorrichtung zur Durchführung des Verfahrens
DE2215355B2 (de) Verfahren zum Abscheiden einkristalliner Halbleiterepitaxialschichten
DE2207056A1 (de) Verfahren zum selektiven epitaxialen Aufwachsen aus der flüssigen Phase
DE1101775B (de) Vorrichtung zum Ziehen von Einkristallen mit vorbestimmter konstanter Fremdstoffkonzentration
DE1166938B (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE1913565C3 (de) Verfahren zur Herstellung eines Kristalls einer halbleitenden Am Bv -Verbindung
DE1260032B (de) Verfahren zur Bildung einer gleichrichtenden Sperrschicht in einem Halbleiterscheibchen
DE2346399A1 (de) Verfahren zum zuechten von epitaxialschichten
DE1219127B (de) Verfahren zur Herstellung eines legierten PN-UEbergangs in einer Halbleiterscheibe
DE1288687B (de) Verfahren zur Herstellung eines Flaechentransistors mit einlegierter Elektrodenpille, aus welcher beim Einlegieren Stoerstoffe verschiedener Diffusionskoeffizienten in den Halbleitergrundkoerper eindiffundiert werden
DE1026433B (de) Flaechenhalbleiter und Verfahren zur Herstellung desselben durch lokale Schmelzung
DE2301148A1 (de) Verfahren zur herstellung einkristalliner halbleiterkoerper und halbleiteranordnungen, insbesondere strahlungsdetektoren, die derartige einkristalline halbleiterkoerper enthalten
DE102016209008B4 (de) Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium, Vorrichtung zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium und Halbleiterscheibe aus einkristallinem Silizium
AT226275B (de) Verfahren zur Erzeugung einer Sperrschicht in einem plättchenförmigen Halbleiter
DE3604260A1 (de) Fluessigkeitsepitaxieverfahren
DE1544224B2 (de) Siliziumdiode und verfahren zu ihrer herstellung