DK119168B - Fremgangsmåde til dannelse af en ensrettende barriere i en halvlederskive. - Google Patents
Fremgangsmåde til dannelse af en ensrettende barriere i en halvlederskive.Info
- Publication number
- DK119168B DK119168B DK381860A DK381860A DK119168B DK 119168 B DK119168 B DK 119168B DK 381860 A DK381860 A DK 381860A DK 381860 A DK381860 A DK 381860A DK 119168 B DK119168 B DK 119168B
- Authority
- DK
- Denmark
- Prior art keywords
- forming
- semiconductor wafer
- unidirectional barrier
- unidirectional
- barrier
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US84318659A | 1959-09-29 | 1959-09-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
DK119168B true DK119168B (da) | 1970-11-23 |
Family
ID=25289283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK381860A DK119168B (da) | 1959-09-29 | 1960-09-28 | Fremgangsmåde til dannelse af en ensrettende barriere i en halvlederskive. |
Country Status (6)
Country | Link |
---|---|
CH (1) | CH397871A (da) |
DE (1) | DE1219127B (da) |
DK (1) | DK119168B (da) |
ES (1) | ES261334A1 (da) |
GB (1) | GB952361A (da) |
NL (1) | NL256342A (da) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS577131A (en) * | 1980-06-16 | 1982-01-14 | Junichi Nishizawa | Manufacture of p-n junction |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
USRE24537E (en) * | 1952-07-29 | 1958-09-23 | Unsymmetrical conductor arrangements | |
US2765245A (en) * | 1952-08-22 | 1956-10-02 | Gen Electric | Method of making p-n junction semiconductor units |
US2821493A (en) * | 1954-03-18 | 1958-01-28 | Hughes Aircraft Co | Fused junction transistors with regrown base regions |
GB864771A (en) * | 1956-11-23 | 1961-04-06 | Pye Ltd | Improvements in or relating to junction transistors |
DE1062823B (de) * | 1957-07-13 | 1959-08-06 | Telefunken Gmbh | Verfahren zur Herstellung von Kristalloden des Legierungstyps |
-
0
- NL NL256342D patent/NL256342A/xx unknown
-
1960
- 1960-08-22 DE DER28590A patent/DE1219127B/de active Pending
- 1960-09-13 GB GB3157660A patent/GB952361A/en not_active Expired
- 1960-09-26 CH CH1081760A patent/CH397871A/de unknown
- 1960-09-28 ES ES0261334A patent/ES261334A1/es not_active Expired
- 1960-09-28 DK DK381860A patent/DK119168B/da unknown
Also Published As
Publication number | Publication date |
---|---|
DE1219127B (de) | 1966-06-16 |
NL256342A (da) | |
GB952361A (en) | 1964-03-18 |
ES261334A1 (es) | 1961-03-16 |
CH397871A (de) | 1965-08-31 |
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