GB952361A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB952361A GB952361A GB3157660A GB3157660A GB952361A GB 952361 A GB952361 A GB 952361A GB 3157660 A GB3157660 A GB 3157660A GB 3157660 A GB3157660 A GB 3157660A GB 952361 A GB952361 A GB 952361A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- germanium
- charge
- silicon
- indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 6
- 229910052732 germanium Inorganic materials 0.000 abstract 5
- 229910052738 indium Inorganic materials 0.000 abstract 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 3
- 229910052733 gallium Inorganic materials 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 229920006395 saturated elastomer Polymers 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000006424 Flood reaction Methods 0.000 abstract 1
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 125000004429 atom Chemical group 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 238000001953 recrystallisation Methods 0.000 abstract 1
- 150000004771 selenides Chemical class 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 238000010583 slow cooling Methods 0.000 abstract 1
- 150000004763 sulfides Chemical class 0.000 abstract 1
- 150000004772 tellurides Chemical class 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
952,361. Semi-conductor devices. RADIO CORPORATION OF AMERICA. Sept. 13, 1960 [Sept. 29, 1959], No. 31576/60. Heading H1K. A rectifying barrier in a semi-conductor wafer is provided by separately heating the wafer and a charge of impurity above the melting- point of the impurity, flooding the wafer with the impurity, cooling to effect partial recrystallization and then decanting the rest of the melt. In one example, an N-type germanium wafer 10 is placed in one end of a boat 11 while a charge 12 of indium is placed at the other end. The boat is heated in furnace tube 13 while tilted and the tube is then moved to the horizontal so that the molten indium floods over the wafer. After slow cooling (e.g. 5 ‹ C. per minute) so that a P-type recrystallized region forms on the wafer, the boat is again tilted so that the remaining indium flows away from the wafer. The operation is carried out in an atmosphere of 9 parts of nitrogen to one of hydrogen, or in nitrogen or helium. Alternatively the charge may comprise lead or consist of an alloy of 99% tin and 1% antimony or of gallium saturated with germanium and silicon or of 25% germanium, 73% indium and 2% gallium. The charge may be initially saturated with germanium and the wafer (heavily doped) heated to a temperature slightly (e.g. 10‹ to 100‹ C.) above that of the charge so that on flooding only a small part of the wafer is dissolved, whereby the thickness of the dissolved portion may be closely controlled. The acceptor concentration in the recrystallized region may be about 10<SP>20</SP> atoms per c.c. to provide a tunnel diode. As an alternative to provide a temperature gradient before flooding, the wafer may be heated to a predetermined higher temperature after flooding with the saturated charge to achieve the same result. The semiconductor may consist of germanium, silicon, germanium-silicon alloy, silicon carbide, the phosphides, arsenides and antimonides of aluminium, gallium and indium, and the sulphides, selenides and tellurides of zinc and cadmium. Intrinsic material may be used to provide PI, NI, &c. junctions. Germanium-silicon layers on silicon or germanium or gallium arsenide layers on gallium phosphide may be provided.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US84318659A | 1959-09-29 | 1959-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB952361A true GB952361A (en) | 1964-03-18 |
Family
ID=25289283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3157660A Expired GB952361A (en) | 1959-09-29 | 1960-09-13 | Semiconductor devices |
Country Status (6)
| Country | Link |
|---|---|
| CH (1) | CH397871A (en) |
| DE (1) | DE1219127B (en) |
| DK (1) | DK119168B (en) |
| ES (1) | ES261334A1 (en) |
| GB (1) | GB952361A (en) |
| NL (1) | NL256342A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2484702A1 (en) * | 1980-06-16 | 1981-12-18 | Nishizawa Junichi | METHOD FOR MANUFACTURING PN JUNCTION OF SEMICONDUCTORS |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
| NL180221B (en) * | 1952-07-29 | Charbonnages Ste Chimique | PROCESS FOR PREPARING A POLYAMINOAMIDE HARDENING AGENT FOR EPOXY RESINS; PROCESS FOR PREPARING A WATER DIVIDED HARDENING AGENT; PROCESS FOR PREPARING AN EPOXY RESIN COMPOSITION CONTAINING SUCH HARDENING AGENT AND AN OBJECT FACING A COATING LAYER OBTAINED FROM SUCH EPOXY RESIN COMPOSITION. | |
| US2765245A (en) * | 1952-08-22 | 1956-10-02 | Gen Electric | Method of making p-n junction semiconductor units |
| US2821493A (en) * | 1954-03-18 | 1958-01-28 | Hughes Aircraft Co | Fused junction transistors with regrown base regions |
| GB864771A (en) * | 1956-11-23 | 1961-04-06 | Pye Ltd | Improvements in or relating to junction transistors |
| DE1062823B (en) * | 1957-07-13 | 1959-08-06 | Telefunken Gmbh | Process for the manufacture of alloy type crystallodes |
-
0
- NL NL256342D patent/NL256342A/xx unknown
-
1960
- 1960-08-22 DE DER28590A patent/DE1219127B/en active Pending
- 1960-09-13 GB GB3157660A patent/GB952361A/en not_active Expired
- 1960-09-26 CH CH1081760A patent/CH397871A/en unknown
- 1960-09-28 ES ES0261334A patent/ES261334A1/en not_active Expired
- 1960-09-28 DK DK381860A patent/DK119168B/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2484702A1 (en) * | 1980-06-16 | 1981-12-18 | Nishizawa Junichi | METHOD FOR MANUFACTURING PN JUNCTION OF SEMICONDUCTORS |
| US4526632A (en) * | 1980-06-16 | 1985-07-02 | Jun-Ichi Nishizawa | Method of fabricating a semiconductor pn junction |
Also Published As
| Publication number | Publication date |
|---|---|
| DK119168B (en) | 1970-11-23 |
| DE1219127B (en) | 1966-06-16 |
| NL256342A (en) | |
| ES261334A1 (en) | 1961-03-16 |
| CH397871A (en) | 1965-08-31 |
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