GB894984A - P-n junction formation - Google Patents

P-n junction formation

Info

Publication number
GB894984A
GB894984A GB37422/58A GB3742258A GB894984A GB 894984 A GB894984 A GB 894984A GB 37422/58 A GB37422/58 A GB 37422/58A GB 3742258 A GB3742258 A GB 3742258A GB 894984 A GB894984 A GB 894984A
Authority
GB
United Kingdom
Prior art keywords
cooling
rate
type
donor
recrystallizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB37422/58A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Publication of GB894984A publication Critical patent/GB894984A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

894,984. Semi-conductor devices. COMPAGNIE FRANCAISE THOMSON-HOUSTON. Nov. 20, 1958 [Nov. 20, 1957], No. 37422/58. Drawings to Specification. Class 37. A method of forming a PN junction comprises cooling a molten semi-conductor material containing a donor and an acceptor impurity at successively different rates, so that the donor or acceptor impurity respectively is dominant in adjacent layers of the recrystallizing material. The relative concentration of the donor and acceptor in the melt is such that at a predetermined rate of cooling the concentrations in the recrystallizing material are substantially identical. Since the variation of segregation coefficient with rate of cooling differs for the donor and acceptor a cooling rate above the predetermined rate gives rise to a predominance of one impurity in the recrystallized material and hence to material of one conductivity type, and a cooling rate below the predetermined rate results in the production of material of the opposite conductivity type. In one embodiment a mass of indium-antimony alloy is melted on the surface of a P-type germanium body to dissolve some of the germanium. The assembly is then rapidly cooled so that the initially recrystallizing material contains a predominance of antimony and is N-type. Subsequently the rate of cooling is reduced to a value at which indium predominates in the recrystallizing material which is therefore P-type. The thickness of the N-type zone is determined by the duration of the rapid cooling step, and the sharpness of its junction with the overlying P-type material by the rate at which the rate of cooling is reduced. An intrinsic region of controlled thickness may be formed between the P and N regions by holding the rate of cooling at the value corresponding to an indiumantimony balance for a fixed interval between the rapid and slow cooling steps. Multiple junctions are formed by repeated changes in the rate of cooling.
GB37422/58A 1957-11-20 1958-11-20 P-n junction formation Expired GB894984A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1196024T 1957-11-20

Publications (1)

Publication Number Publication Date
GB894984A true GB894984A (en) 1962-04-26

Family

ID=9668984

Family Applications (1)

Application Number Title Priority Date Filing Date
GB37422/58A Expired GB894984A (en) 1957-11-20 1958-11-20 P-n junction formation

Country Status (2)

Country Link
FR (1) FR1196024A (en)
GB (1) GB894984A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1260032B (en) * 1962-05-14 1968-02-01 Rca Corp Process for forming a rectifying barrier layer in a semiconductor wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1260032B (en) * 1962-05-14 1968-02-01 Rca Corp Process for forming a rectifying barrier layer in a semiconductor wafer

Also Published As

Publication number Publication date
FR1196024A (en) 1959-11-20

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