DE1214788B - Diffusions-Verfahren zur Herstellung eines Halbleiterelementes - Google Patents
Diffusions-Verfahren zur Herstellung eines HalbleiterelementesInfo
- Publication number
- DE1214788B DE1214788B DEH43432A DEH0043432A DE1214788B DE 1214788 B DE1214788 B DE 1214788B DE H43432 A DEH43432 A DE H43432A DE H0043432 A DEH0043432 A DE H0043432A DE 1214788 B DE1214788 B DE 1214788B
- Authority
- DE
- Germany
- Prior art keywords
- diffusion
- diffusion chamber
- chamber
- semiconductor
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 title claims description 88
- 239000004065 semiconductor Substances 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000000463 material Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 32
- 239000011261 inert gas Substances 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 7
- 229920006395 saturated elastomer Polymers 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 239000007789 gas Substances 0.000 description 15
- 229910052796 boron Inorganic materials 0.000 description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 6
- 239000002775 capsule Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009970 fire resistant effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7095160A | 1960-11-22 | 1960-11-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1214788B true DE1214788B (de) | 1966-04-21 |
Family
ID=22098349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEH43432A Pending DE1214788B (de) | 1960-11-22 | 1961-08-18 | Diffusions-Verfahren zur Herstellung eines Halbleiterelementes |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE607003A (enrdf_load_stackoverflow) |
| DE (1) | DE1214788B (enrdf_load_stackoverflow) |
| GB (1) | GB936815A (enrdf_load_stackoverflow) |
| NL (1) | NL268470A (enrdf_load_stackoverflow) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE552316A (enrdf_load_stackoverflow) * | 1955-11-05 | |||
| DE1084840B (de) * | 1957-01-23 | 1960-07-07 | Intermetall | Verfahren zur Herstellung von kugelfoermigen Halbleiterkoerpern aus Silizium von Halbleiteranordnungen, z. B. Spitzen-Gleichrichtern oder Spitzen-Transistoren |
| DE1086515B (de) * | 1958-01-15 | 1960-08-04 | Hivolin G M B H | Verfahren und Vorrichtung zur gleichwirkenden inneren Behandlung von Hohlkoerpersystemen mit Fluessig-keiten, z. B. zum Ausbeizen von Kesselanlagen |
| DE1090771B (de) * | 1956-01-20 | 1960-10-13 | S E A Soc D Electronique Et D | Verfahren zur Herstellung von Halbleiteranordnungen mit duennen Einkristallschichten auf einem metallisch leitenden Traeger |
-
0
- NL NL268470D patent/NL268470A/xx unknown
-
1961
- 1961-08-08 BE BE607003A patent/BE607003A/fr unknown
- 1961-08-15 GB GB2946661A patent/GB936815A/en not_active Expired
- 1961-08-18 DE DEH43432A patent/DE1214788B/de active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE552316A (enrdf_load_stackoverflow) * | 1955-11-05 | |||
| DE1090771B (de) * | 1956-01-20 | 1960-10-13 | S E A Soc D Electronique Et D | Verfahren zur Herstellung von Halbleiteranordnungen mit duennen Einkristallschichten auf einem metallisch leitenden Traeger |
| DE1084840B (de) * | 1957-01-23 | 1960-07-07 | Intermetall | Verfahren zur Herstellung von kugelfoermigen Halbleiterkoerpern aus Silizium von Halbleiteranordnungen, z. B. Spitzen-Gleichrichtern oder Spitzen-Transistoren |
| DE1086515B (de) * | 1958-01-15 | 1960-08-04 | Hivolin G M B H | Verfahren und Vorrichtung zur gleichwirkenden inneren Behandlung von Hohlkoerpersystemen mit Fluessig-keiten, z. B. zum Ausbeizen von Kesselanlagen |
Also Published As
| Publication number | Publication date |
|---|---|
| NL268470A (enrdf_load_stackoverflow) | |
| GB936815A (en) | 1963-09-11 |
| BE607003A (fr) | 1961-12-01 |
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