GB936815A - Method of diffusion - Google Patents
Method of diffusionInfo
- Publication number
- GB936815A GB936815A GB2946661A GB2946661A GB936815A GB 936815 A GB936815 A GB 936815A GB 2946661 A GB2946661 A GB 2946661A GB 2946661 A GB2946661 A GB 2946661A GB 936815 A GB936815 A GB 936815A
- Authority
- GB
- United Kingdom
- Prior art keywords
- container
- boron
- flow
- semi
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000009792 diffusion process Methods 0.000 title abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 6
- 229910052796 boron Inorganic materials 0.000 abstract 5
- 235000012431 wafers Nutrition 0.000 abstract 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 4
- 239000007789 gas Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000010926 purge Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 238000009738 saturating Methods 0.000 abstract 1
- 238000010581 sealed tube method Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7095160A | 1960-11-22 | 1960-11-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB936815A true GB936815A (en) | 1963-09-11 |
Family
ID=22098349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2946661A Expired GB936815A (en) | 1960-11-22 | 1961-08-15 | Method of diffusion |
Country Status (4)
Country | Link |
---|---|
BE (1) | BE607003A (enrdf_load_stackoverflow) |
DE (1) | DE1214788B (enrdf_load_stackoverflow) |
GB (1) | GB936815A (enrdf_load_stackoverflow) |
NL (1) | NL268470A (enrdf_load_stackoverflow) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE552316A (enrdf_load_stackoverflow) * | 1955-11-05 | |||
DE1090771B (de) * | 1956-01-20 | 1960-10-13 | S E A Soc D Electronique Et D | Verfahren zur Herstellung von Halbleiteranordnungen mit duennen Einkristallschichten auf einem metallisch leitenden Traeger |
DE1084840B (de) * | 1957-01-23 | 1960-07-07 | Intermetall | Verfahren zur Herstellung von kugelfoermigen Halbleiterkoerpern aus Silizium von Halbleiteranordnungen, z. B. Spitzen-Gleichrichtern oder Spitzen-Transistoren |
DE1086515B (de) * | 1958-01-15 | 1960-08-04 | Hivolin G M B H | Verfahren und Vorrichtung zur gleichwirkenden inneren Behandlung von Hohlkoerpersystemen mit Fluessig-keiten, z. B. zum Ausbeizen von Kesselanlagen |
-
0
- NL NL268470D patent/NL268470A/xx unknown
-
1961
- 1961-08-08 BE BE607003A patent/BE607003A/fr unknown
- 1961-08-15 GB GB2946661A patent/GB936815A/en not_active Expired
- 1961-08-18 DE DEH43432A patent/DE1214788B/de active Pending
Also Published As
Publication number | Publication date |
---|---|
NL268470A (enrdf_load_stackoverflow) | |
DE1214788B (de) | 1966-04-21 |
BE607003A (fr) | 1961-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2834697A (en) | Process for vapor-solid diffusion of a conductivity-type determining impurity in semiconductors | |
ES249909A1 (es) | Procedimiento para introducir impurezas apreciables o influyentes en un cuerpo semiconductivo sëlido | |
KR910013457A (ko) | 불순물 도우핑 장치 | |
GB1100780A (en) | Improvements in or relating to the diffusion of doping substances into semiconductor crystals | |
US3298879A (en) | Method of fabricating a semiconductor by masking | |
GB936815A (en) | Method of diffusion | |
US3205102A (en) | Method of diffusion | |
US3798084A (en) | Simultaneous diffusion processing | |
US3997379A (en) | Diffusion of conductivity modifiers into a semiconductor body | |
ES270156A1 (es) | Metodo para ajustar una presiën de vapor de una sustancia en un espacio | |
GB1258226A (enrdf_load_stackoverflow) | ||
GB1282363A (en) | Improvements in or relating to apparatus for use in the diffusion of a doping substance into a body of semiconductor material | |
US4211182A (en) | Diffusion apparatus | |
JPS5737824A (en) | Method and device for impurity diffusion | |
GB1207748A (en) | DOUBLE DEPOSITIONS OF BBr3, IN SILICON | |
US2887453A (en) | Semi-conductor activated with dissociated ammonia | |
US3340445A (en) | Semiconductor devices having modifier-containing surface oxide layer | |
US3085032A (en) | Treatment of gallium arsenide | |
GB1105377A (en) | Improvements in or relating to the manufacture of doped semiconductor crystals | |
GB1115140A (en) | Semiconductors | |
GB1035810A (en) | Improvements in or relating to processes for the manufacture of monocrystalline layers of semiconductor material | |
GB1312226A (en) | Diffusion of doping substances into wafers of semiconductor material | |
JPS5736830A (ja) | Handotaihenofujunbutsukakusanho | |
US3532565A (en) | Antimony pentachloride diffusion | |
US4317680A (en) | Diffusion source and method of preparing |