DE1188043B - Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial - Google Patents
Vorrichtung zum tiegelfreien Zonenschmelzen von HalbleitermaterialInfo
- Publication number
- DE1188043B DE1188043B DES83049A DES0083049A DE1188043B DE 1188043 B DE1188043 B DE 1188043B DE S83049 A DES83049 A DE S83049A DE S0083049 A DES0083049 A DE S0083049A DE 1188043 B DE1188043 B DE 1188043B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor material
- screen
- melting
- crucible
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 239000000463 material Substances 0.000 title claims description 14
- 238000004857 zone melting Methods 0.000 title claims description 10
- 238000002844 melting Methods 0.000 claims description 20
- 230000008018 melting Effects 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 10
- 230000001939 inductive effect Effects 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002826 coolant Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES83049A DE1188043B (de) | 1962-12-24 | 1962-12-24 | Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial |
| CH1043163A CH420069A (de) | 1962-12-24 | 1963-08-23 | Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial |
| GB4610363A GB1029805A (en) | 1962-12-24 | 1963-11-21 | A process in which semi-conductor material is melted and resolidified in the form of a rod and apparatus for carrying out such a process |
| BE641733A BE641733A (enExample) | 1962-12-24 | 1963-12-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES83049A DE1188043B (de) | 1962-12-24 | 1962-12-24 | Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1188043B true DE1188043B (de) | 1965-03-04 |
Family
ID=7510769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES83049A Pending DE1188043B (de) | 1962-12-24 | 1962-12-24 | Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE641733A (enExample) |
| CH (1) | CH420069A (enExample) |
| DE (1) | DE1188043B (enExample) |
| GB (1) | GB1029805A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1802524B1 (de) * | 1968-10-11 | 1970-06-04 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes |
| DE3107260A1 (de) * | 1981-02-26 | 1982-09-09 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum abscheiden von halbleitermaterial, insbesondere silicium |
-
1962
- 1962-12-24 DE DES83049A patent/DE1188043B/de active Pending
-
1963
- 1963-08-23 CH CH1043163A patent/CH420069A/de unknown
- 1963-11-21 GB GB4610363A patent/GB1029805A/en not_active Expired
- 1963-12-24 BE BE641733A patent/BE641733A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1802524B1 (de) * | 1968-10-11 | 1970-06-04 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes |
| DE3107260A1 (de) * | 1981-02-26 | 1982-09-09 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum abscheiden von halbleitermaterial, insbesondere silicium |
Also Published As
| Publication number | Publication date |
|---|---|
| CH420069A (de) | 1966-09-15 |
| BE641733A (enExample) | 1964-06-24 |
| GB1029805A (en) | 1966-05-18 |
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