DE1185292B - Doppelhalbleiterbauelement mit einem Esaki-UEbergang und einem parallel geschalteten weiteren UEbergang - Google Patents

Doppelhalbleiterbauelement mit einem Esaki-UEbergang und einem parallel geschalteten weiteren UEbergang

Info

Publication number
DE1185292B
DE1185292B DEJ21602A DEJ0021602A DE1185292B DE 1185292 B DE1185292 B DE 1185292B DE J21602 A DEJ21602 A DE J21602A DE J0021602 A DEJ0021602 A DE J0021602A DE 1185292 B DE1185292 B DE 1185292B
Authority
DE
Germany
Prior art keywords
zone
transition
zones
germanium
esaki
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEJ21602A
Other languages
German (de)
English (en)
Inventor
John C Marinace
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE1185292B publication Critical patent/DE1185292B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/979—Tunnel diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
DEJ21602A 1961-04-20 1962-04-12 Doppelhalbleiterbauelement mit einem Esaki-UEbergang und einem parallel geschalteten weiteren UEbergang Pending DE1185292B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US104421A US3267338A (en) 1961-04-20 1961-04-20 Integrated circuit process and structure

Publications (1)

Publication Number Publication Date
DE1185292B true DE1185292B (de) 1965-01-14

Family

ID=22300393

Family Applications (1)

Application Number Title Priority Date Filing Date
DEJ21602A Pending DE1185292B (de) 1961-04-20 1962-04-12 Doppelhalbleiterbauelement mit einem Esaki-UEbergang und einem parallel geschalteten weiteren UEbergang

Country Status (6)

Country Link
US (1) US3267338A (OSRAM)
CH (1) CH408217A (OSRAM)
DE (1) DE1185292B (OSRAM)
FR (1) FR1319936A (OSRAM)
GB (1) GB989118A (OSRAM)
NL (1) NL277300A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1040400A (en) * 1963-11-27 1966-08-24 Standard Telephones Cables Ltd Semiconductor device
US3457467A (en) * 1965-06-03 1969-07-22 Westinghouse Electric Corp Heterojunction solar cell with shorted substrate
GB1134928A (en) * 1966-11-22 1968-11-27 Standard Telephones Cables Ltd Varactor diode
US4137542A (en) * 1977-04-20 1979-01-30 International Business Machines Corporation Semiconductor structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB736289A (en) * 1952-12-19 1955-09-07 Gen Ral Electric Company Improvements relating to transistor amplifiers
US2970229A (en) * 1958-10-10 1961-01-31 Sylvania Electric Prod Temperature independent transistor with grain boundary
FR1255899A (fr) * 1959-08-05 1961-03-10 Ibm Oscillateur et son procédé de fabrication
FR1263548A (fr) * 1959-07-14 1961-06-09 Ericsson Telefon Ab L M Dispositif semi-conducteur du type pnpn et son procédé de fabrication

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2770761A (en) * 1954-12-16 1956-11-13 Bell Telephone Labor Inc Semiconductor translators containing enclosed active junctions
BE550586A (OSRAM) * 1955-12-02
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
US3008089A (en) * 1958-02-20 1961-11-07 Bell Telephone Labor Inc Semiconductive device comprising p-i-n conductivity layers
FR1193194A (fr) * 1958-03-12 1959-10-30 Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions
GB882788A (en) * 1958-07-05 1961-11-22 Reinold Hagen Process and apparatus for manufacturing bottles and the like neck-provided articles from thermoplastic material
US3104991A (en) * 1958-09-23 1963-09-24 Raytheon Co Method of preparing semiconductor material
NL239785A (OSRAM) * 1959-06-02
NL252531A (OSRAM) * 1959-06-30 1900-01-01
US3176147A (en) * 1959-11-17 1965-03-30 Ibm Parallel connected two-terminal semiconductor devices of different negative resistance characteristics
NL257217A (OSRAM) * 1959-12-07
US3119072A (en) * 1960-01-07 1964-01-21 Rca Corp Rectifying circuits
NL260481A (OSRAM) * 1960-02-08
US3070762A (en) * 1960-05-02 1962-12-25 Texas Instruments Inc Voltage tuned resistance-capacitance filter, consisting of integrated semiconductor elements usable in phase shift oscillator
US3054070A (en) * 1960-12-30 1962-09-11 Ibm Oscillators operable selectively between oscillation and non-oscillation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB736289A (en) * 1952-12-19 1955-09-07 Gen Ral Electric Company Improvements relating to transistor amplifiers
US2970229A (en) * 1958-10-10 1961-01-31 Sylvania Electric Prod Temperature independent transistor with grain boundary
FR1263548A (fr) * 1959-07-14 1961-06-09 Ericsson Telefon Ab L M Dispositif semi-conducteur du type pnpn et son procédé de fabrication
FR1255899A (fr) * 1959-08-05 1961-03-10 Ibm Oscillateur et son procédé de fabrication

Also Published As

Publication number Publication date
CH408217A (de) 1966-02-28
FR1319936A (fr) 1963-03-01
US3267338A (en) 1966-08-16
NL277300A (OSRAM)
GB989118A (en) 1965-04-14

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