NL257217A - - Google Patents

Info

Publication number
NL257217A
NL257217A NL257217DA NL257217A NL 257217 A NL257217 A NL 257217A NL 257217D A NL257217D A NL 257217DA NL 257217 A NL257217 A NL 257217A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL257217A publication Critical patent/NL257217A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/979—Tunnel diodes
NL257217D 1959-12-07 NL257217A (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES66137A DE1150456B (de) 1959-12-07 1959-12-07 Esaki-Diode und Verfahren zu ihrer Herstellung

Publications (1)

Publication Number Publication Date
NL257217A true NL257217A (OSRAM)

Family

ID=7498576

Family Applications (1)

Application Number Title Priority Date Filing Date
NL257217D NL257217A (OSRAM) 1959-12-07

Country Status (5)

Country Link
US (1) US3041508A (OSRAM)
CH (1) CH387806A (OSRAM)
DE (1) DE1150456B (OSRAM)
GB (1) GB953198A (OSRAM)
NL (1) NL257217A (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3110849A (en) * 1960-10-03 1963-11-12 Gen Electric Tunnel diode device
US3207635A (en) * 1961-04-19 1965-09-21 Ibm Tunnel diode and process therefor
NL277300A (OSRAM) * 1961-04-20
GB927380A (en) * 1962-03-21 1963-05-29 Mullard Ltd Improvements in or relating to solders
US3299330A (en) * 1963-02-07 1967-01-17 Nippon Electric Co Intermetallic compound semiconductor devices
US3245848A (en) * 1963-07-11 1966-04-12 Hughes Aircraft Co Method for making a gallium arsenide transistor
US3354365A (en) * 1964-10-29 1967-11-21 Texas Instruments Inc Alloy contact containing aluminum and tin
US3314830A (en) * 1964-08-03 1967-04-18 Texas Instruments Inc Semiconductor contact alloy
US3321384A (en) * 1964-10-27 1967-05-23 Harry H Wieder Process for producing semiconductorfilm hall devices on oxide-metal substrate
NL6611537A (OSRAM) * 1966-08-17 1968-02-19
US3424954A (en) * 1966-09-21 1969-01-28 Bell Telephone Labor Inc Silicon oxide tunnel diode structure and method of making same
DE1299077B (de) * 1966-10-06 1969-07-10 Madoyan Susanna G Halbleiterbauelement mit einem einen Tunnel-Effekt aufweisenden pn-UEbergang

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2829422A (en) * 1952-05-21 1958-04-08 Bell Telephone Labor Inc Methods of fabricating semiconductor signal translating devices
US2931958A (en) * 1954-05-03 1960-04-05 Nat Res Dev Semi-conductor devices
US2842831A (en) * 1956-08-30 1958-07-15 Bell Telephone Labor Inc Manufacture of semiconductor devices
US2900286A (en) * 1957-11-19 1959-08-18 Rca Corp Method of manufacturing semiconductive bodies
US2937324A (en) * 1959-02-05 1960-05-17 Westinghouse Electric Corp Silicon carbide rectifier

Also Published As

Publication number Publication date
US3041508A (en) 1962-06-26
CH387806A (de) 1965-02-15
GB953198A (en) 1964-03-25
DE1150456B (de) 1963-06-20

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