CH387806A - Tunnel-Diode und Verfahren zu ihrer Herstellung - Google Patents

Tunnel-Diode und Verfahren zu ihrer Herstellung

Info

Publication number
CH387806A
CH387806A CH1116360A CH1116360A CH387806A CH 387806 A CH387806 A CH 387806A CH 1116360 A CH1116360 A CH 1116360A CH 1116360 A CH1116360 A CH 1116360A CH 387806 A CH387806 A CH 387806A
Authority
CH
Switzerland
Prior art keywords
manufacture
tunnel diode
tunnel
diode
Prior art date
Application number
CH1116360A
Other languages
English (en)
Inventor
Hans-Joachim Dr Henkel
Rolf Dr Gremmelmaier
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH387806A publication Critical patent/CH387806A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/979—Tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Hall/Mr Elements (AREA)
  • Conductive Materials (AREA)
  • Contacts (AREA)
CH1116360A 1959-12-07 1960-10-05 Tunnel-Diode und Verfahren zu ihrer Herstellung CH387806A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES66137A DE1150456B (de) 1959-12-07 1959-12-07 Esaki-Diode und Verfahren zu ihrer Herstellung

Publications (1)

Publication Number Publication Date
CH387806A true CH387806A (de) 1965-02-15

Family

ID=7498576

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1116360A CH387806A (de) 1959-12-07 1960-10-05 Tunnel-Diode und Verfahren zu ihrer Herstellung

Country Status (5)

Country Link
US (1) US3041508A (de)
CH (1) CH387806A (de)
DE (1) DE1150456B (de)
GB (1) GB953198A (de)
NL (1) NL257217A (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3110849A (en) * 1960-10-03 1963-11-12 Gen Electric Tunnel diode device
US3207635A (en) * 1961-04-19 1965-09-21 Ibm Tunnel diode and process therefor
NL277300A (de) * 1961-04-20
GB927380A (en) * 1962-03-21 1963-05-29 Mullard Ltd Improvements in or relating to solders
US3299330A (en) * 1963-02-07 1967-01-17 Nippon Electric Co Intermetallic compound semiconductor devices
US3245848A (en) * 1963-07-11 1966-04-12 Hughes Aircraft Co Method for making a gallium arsenide transistor
US3314830A (en) * 1964-08-03 1967-04-18 Texas Instruments Inc Semiconductor contact alloy
US3354365A (en) * 1964-10-29 1967-11-21 Texas Instruments Inc Alloy contact containing aluminum and tin
US3321384A (en) * 1964-10-27 1967-05-23 Harry H Wieder Process for producing semiconductorfilm hall devices on oxide-metal substrate
NL6611537A (de) * 1966-08-17 1968-02-19
US3424954A (en) * 1966-09-21 1969-01-28 Bell Telephone Labor Inc Silicon oxide tunnel diode structure and method of making same
DE1299077B (de) * 1966-10-06 1969-07-10 Madoyan Susanna G Halbleiterbauelement mit einem einen Tunnel-Effekt aufweisenden pn-UEbergang

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2829422A (en) * 1952-05-21 1958-04-08 Bell Telephone Labor Inc Methods of fabricating semiconductor signal translating devices
US2931958A (en) * 1954-05-03 1960-04-05 Nat Res Dev Semi-conductor devices
US2842831A (en) * 1956-08-30 1958-07-15 Bell Telephone Labor Inc Manufacture of semiconductor devices
US2900286A (en) * 1957-11-19 1959-08-18 Rca Corp Method of manufacturing semiconductive bodies
US2937324A (en) * 1959-02-05 1960-05-17 Westinghouse Electric Corp Silicon carbide rectifier

Also Published As

Publication number Publication date
US3041508A (en) 1962-06-26
DE1150456B (de) 1963-06-20
NL257217A (de)
GB953198A (en) 1964-03-25

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