CH384720A - Transistor und Verfahren zu seiner Herstellung - Google Patents

Transistor und Verfahren zu seiner Herstellung

Info

Publication number
CH384720A
CH384720A CH7712859A CH7712859A CH384720A CH 384720 A CH384720 A CH 384720A CH 7712859 A CH7712859 A CH 7712859A CH 7712859 A CH7712859 A CH 7712859A CH 384720 A CH384720 A CH 384720A
Authority
CH
Switzerland
Prior art keywords
transistor
manufacture
Prior art date
Application number
CH7712859A
Other languages
English (en)
Inventor
Goetzberger Adolf Dr Dipl-Phys
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH384720A publication Critical patent/CH384720A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
CH7712859A 1958-08-27 1959-08-19 Transistor und Verfahren zu seiner Herstellung CH384720A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES59587A DE1094886B (de) 1958-08-27 1958-08-27 Halbleiteranordnung mit Kollektorelektrode, insbesondere Transistor fuer hohe Frequenzen und grosse Verlustleistung

Publications (1)

Publication Number Publication Date
CH384720A true CH384720A (de) 1965-02-26

Family

ID=7493419

Family Applications (1)

Application Number Title Priority Date Filing Date
CH7712859A CH384720A (de) 1958-08-27 1959-08-19 Transistor und Verfahren zu seiner Herstellung

Country Status (5)

Country Link
CH (1) CH384720A (de)
DE (1) DE1094886B (de)
FR (1) FR1232180A (de)
GB (1) GB876332A (de)
NL (1) NL242556A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0090651A2 (de) * 1982-03-31 1983-10-05 Fujitsu Limited Halbleiterchipkonstruktion mit wärmestrahlender Platte

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL280849A (de) * 1961-07-12 1900-01-01
GB1052661A (de) * 1963-01-30 1900-01-01
US3697829A (en) * 1968-12-30 1972-10-10 Gen Electric Semiconductor devices with improved voltage breakdown characteristics

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1036393B (de) * 1954-08-05 1958-08-14 Siemens Ag Verfahren zur Herstellung von zwei p-n-UEbergaengen in Halbleiterkoerpern, z. B. Flaechentransistoren
DE1035780B (de) * 1955-08-29 1958-08-07 Ibm Deutschland Transistor mit eigenleitender Zone

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0090651A2 (de) * 1982-03-31 1983-10-05 Fujitsu Limited Halbleiterchipkonstruktion mit wärmestrahlender Platte
EP0090651A3 (en) * 1982-03-31 1986-03-19 Fujitsu Limited Semiconductor chip assembly including a thermal radiator plate

Also Published As

Publication number Publication date
NL242556A (de)
FR1232180A (fr) 1960-10-06
DE1094886B (de) 1960-12-15
GB876332A (en) 1961-08-30

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