AT239853B - Flächentransistor und Verfahren zu seiner Herstellung - Google Patents

Flächentransistor und Verfahren zu seiner Herstellung

Info

Publication number
AT239853B
AT239853B AT686762A AT686762A AT239853B AT 239853 B AT239853 B AT 239853B AT 686762 A AT686762 A AT 686762A AT 686762 A AT686762 A AT 686762A AT 239853 B AT239853 B AT 239853B
Authority
AT
Austria
Prior art keywords
manufacture
surface transistor
transistor
Prior art date
Application number
AT686762A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT239853B publication Critical patent/AT239853B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Weting (AREA)
AT686762A 1961-08-28 1962-08-27 Flächentransistor und Verfahren zu seiner Herstellung AT239853B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL268692 1961-08-28

Publications (1)

Publication Number Publication Date
AT239853B true AT239853B (de) 1965-04-26

Family

ID=19753251

Family Applications (1)

Application Number Title Priority Date Filing Date
AT686762A AT239853B (de) 1961-08-28 1962-08-27 Flächentransistor und Verfahren zu seiner Herstellung

Country Status (8)

Country Link
US (1) US3268781A (de)
AT (1) AT239853B (de)
BE (1) BE621788A (de)
CH (1) CH407333A (de)
DK (1) DK106875C (de)
ES (1) ES280288A1 (de)
GB (1) GB1021083A (de)
NL (2) NL268692A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2917654A1 (de) * 1979-05-02 1980-11-13 Ibm Deutschland Anordnung und verfahren zum selektiven, elektrochemischen aetzen
EP0018556B1 (de) * 1979-05-02 1984-08-08 International Business Machines Corporation Anordnung und Verfahren zum selektiven, elektrochemischen Ätzen
JPS6130038A (ja) * 1984-07-23 1986-02-12 Nec Corp エツチングの方法
CN115012003B (zh) * 2022-06-20 2024-02-06 中南大学 一种硫化锑矿熔盐电解连续化生产的方法及装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB810946A (en) * 1954-03-26 1959-03-25 Philco Corp Electrolytic shaping of semiconductive bodies
US2864006A (en) * 1956-07-06 1958-12-09 Gen Electric Cooling structure for semiconductor devices
US2982893A (en) * 1956-11-16 1961-05-02 Raytheon Co Electrical connections to semiconductor bodies
US3078219A (en) * 1958-11-03 1963-02-19 Westinghouse Electric Corp Surface treatment of silicon carbide
FR1223418A (fr) * 1959-01-07 1960-06-16 Dispositifs à semi-conducteur à deux bornes à résistance différentielle négative

Also Published As

Publication number Publication date
DK106875C (da) 1967-03-28
NL122951C (de)
DE1464288B2 (de) 1972-06-22
GB1021083A (en) 1966-02-23
CH407333A (de) 1966-02-15
NL268692A (de)
ES280288A1 (es) 1962-12-01
DE1464288A1 (de) 1969-04-10
US3268781A (en) 1966-08-23
BE621788A (de)

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