CH407333A - Flächentransistor und Verfahren zu seiner Herstellung - Google Patents

Flächentransistor und Verfahren zu seiner Herstellung

Info

Publication number
CH407333A
CH407333A CH1012562A CH1012562A CH407333A CH 407333 A CH407333 A CH 407333A CH 1012562 A CH1012562 A CH 1012562A CH 1012562 A CH1012562 A CH 1012562A CH 407333 A CH407333 A CH 407333A
Authority
CH
Switzerland
Prior art keywords
manufacture
surface transistor
transistor
Prior art date
Application number
CH1012562A
Other languages
English (en)
Inventor
Frederic Le Can Claud Principe
Maria Hospel Petrus Albertus
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH407333A publication Critical patent/CH407333A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
CH1012562A 1961-08-28 1962-08-24 Flächentransistor und Verfahren zu seiner Herstellung CH407333A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL268692 1961-08-28

Publications (1)

Publication Number Publication Date
CH407333A true CH407333A (de) 1966-02-15

Family

ID=19753251

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1012562A CH407333A (de) 1961-08-28 1962-08-24 Flächentransistor und Verfahren zu seiner Herstellung

Country Status (8)

Country Link
US (1) US3268781A (de)
AT (1) AT239853B (de)
BE (1) BE621788A (de)
CH (1) CH407333A (de)
DK (1) DK106875C (de)
ES (1) ES280288A1 (de)
GB (1) GB1021083A (de)
NL (2) NL268692A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0018556A1 (de) * 1979-05-02 1980-11-12 International Business Machines Corporation Anordnung und Verfahren zum selektiven, elektrochemischen Ätzen

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2917654A1 (de) * 1979-05-02 1980-11-13 Ibm Deutschland Anordnung und verfahren zum selektiven, elektrochemischen aetzen
JPS6130038A (ja) * 1984-07-23 1986-02-12 Nec Corp エツチングの方法
CN115012003B (zh) * 2022-06-20 2024-02-06 中南大学 一种硫化锑矿熔盐电解连续化生产的方法及装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB810946A (en) * 1954-03-26 1959-03-25 Philco Corp Electrolytic shaping of semiconductive bodies
US2864006A (en) * 1956-07-06 1958-12-09 Gen Electric Cooling structure for semiconductor devices
US2982893A (en) * 1956-11-16 1961-05-02 Raytheon Co Electrical connections to semiconductor bodies
US3078219A (en) * 1958-11-03 1963-02-19 Westinghouse Electric Corp Surface treatment of silicon carbide
FR1223418A (fr) * 1959-01-07 1960-06-16 Dispositifs à semi-conducteur à deux bornes à résistance différentielle négative

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0018556A1 (de) * 1979-05-02 1980-11-12 International Business Machines Corporation Anordnung und Verfahren zum selektiven, elektrochemischen Ätzen

Also Published As

Publication number Publication date
NL122951C (de)
DE1464288A1 (de) 1969-04-10
DK106875C (da) 1967-03-28
ES280288A1 (es) 1962-12-01
US3268781A (en) 1966-08-23
AT239853B (de) 1965-04-26
DE1464288B2 (de) 1972-06-22
NL268692A (de)
GB1021083A (en) 1966-02-23
BE621788A (de)

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