DE1127488B - Halbleiteranordnung aus Silizium oder Germanium und Verfahren zu ihrer Herstellung - Google Patents
Halbleiteranordnung aus Silizium oder Germanium und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE1127488B DE1127488B DEW24913A DEW0024913A DE1127488B DE 1127488 B DE1127488 B DE 1127488B DE W24913 A DEW24913 A DE W24913A DE W0024913 A DEW0024913 A DE W0024913A DE 1127488 B DE1127488 B DE 1127488B
- Authority
- DE
- Germany
- Prior art keywords
- layer
- gold
- silver
- semiconductor
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 229910052710 silicon Inorganic materials 0.000 title claims description 8
- 239000010703 silicon Substances 0.000 title claims description 8
- 229910052732 germanium Inorganic materials 0.000 title claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 7
- 238000000034 method Methods 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 50
- 229910052737 gold Inorganic materials 0.000 claims description 50
- 239000010931 gold Substances 0.000 claims description 50
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 29
- 229910052709 silver Inorganic materials 0.000 claims description 29
- 239000004332 silver Substances 0.000 claims description 29
- 239000000956 alloy Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-OUBTZVSYSA-N boron-12 Chemical compound [12B] ZOXJGFHDIHLPTG-OUBTZVSYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
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Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US712804A US3028663A (en) | 1958-02-03 | 1958-02-03 | Method for applying a gold-silver contact onto silicon and germanium semiconductors and article |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1127488B true DE1127488B (de) | 1962-04-12 |
Family
ID=24863620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEW24913A Pending DE1127488B (de) | 1958-02-03 | 1959-01-27 | Halbleiteranordnung aus Silizium oder Germanium und Verfahren zu ihrer Herstellung |
Country Status (6)
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1235434B (de) * | 1962-08-15 | 1967-03-02 | Ass Elect Ind | Verfahren zum Ausbilden eines Kurzschlusses zwischen der Emitterzone und der benachbarten Zone entgegengesetzten Leitungstyps eines steuerbaren Siliziumgleichrichterelementes |
DE1236081B (de) * | 1963-02-06 | 1967-03-09 | Itt Ind Ges Mit Beschraenkter | Verfahren zur Herstellung von ohmschen Kontakten an Halbleiterbauelementen |
DE1274735B (de) * | 1964-08-21 | 1968-08-08 | Ibm Deutschland | Verfahren zum Herstellen von Legierungskontakten an Halbleiterkoerpern |
DE1276826B (de) * | 1964-01-29 | 1968-09-05 | Itt Ind Ges Mit Beschraenkter | Verfahren zum Herstellen von Halbleiterbauelementen |
DE1286642B (de) * | 1964-03-30 | 1969-01-09 | Gen Electric | Verfahren zur Herstellung einer Halbleiteranordnung |
DE1514806B1 (de) * | 1965-04-10 | 1970-04-23 | Telefunken Patent | Verfahren zur Herstellung einer sperrenden oder nichtsperrenden Elektrode an einem Halbleiterkoerper sowie einer diese Elektrode kontaktierenden Leitbahn |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3155936A (en) * | 1958-04-24 | 1964-11-03 | Motorola Inc | Transistor device with self-jigging construction |
US3108209A (en) * | 1959-05-21 | 1963-10-22 | Motorola Inc | Transistor device and method of manufacture |
GB930091A (en) * | 1960-06-24 | 1963-07-03 | Mond Nickel Co Ltd | Improvements relating to the production of semi-conductor devices |
US3158504A (en) * | 1960-10-07 | 1964-11-24 | Texas Instruments Inc | Method of alloying an ohmic contact to a semiconductor |
NL270517A (US06291589-20010918-C00001.png) * | 1960-11-16 | |||
DE1131811B (de) * | 1961-05-17 | 1962-06-20 | Intermetall | Verfahren zum sperrfreien Kontaktieren des Kollektors von Germanium-Transistoren |
BE620118A (US06291589-20010918-C00001.png) * | 1961-07-14 | |||
FR1306701A (fr) * | 1961-09-04 | 1962-10-19 | Electronique & Automatisme Sa | Perfectionnements aux potentiomètres |
DE1174912B (de) * | 1962-01-09 | 1964-07-30 | Bosch Gmbh Robert | Verfahren zum Behandeln von Einschmelz-draehten fuer Elektronenroehren |
DE1251871B (US06291589-20010918-C00001.png) * | 1962-02-06 | 1900-01-01 | ||
US3266137A (en) * | 1962-06-07 | 1966-08-16 | Hughes Aircraft Co | Metal ball connection to crystals |
US3271636A (en) * | 1962-10-23 | 1966-09-06 | Bell Telephone Labor Inc | Gallium arsenide semiconductor diode and method |
US3349476A (en) * | 1963-11-26 | 1967-10-31 | Ibm | Formation of large area contacts to semiconductor devices |
US3370207A (en) * | 1964-02-24 | 1968-02-20 | Gen Electric | Multilayer contact system for semiconductor devices including gold and copper layers |
US3339274A (en) * | 1964-03-16 | 1967-09-05 | Hughes Aircraft Co | Top contact for surface protected semiconductor devices |
US3290570A (en) * | 1964-04-28 | 1966-12-06 | Texas Instruments Inc | Multilevel expanded metallic contacts for semiconductor devices |
US3325704A (en) * | 1964-07-31 | 1967-06-13 | Texas Instruments Inc | High frequency coaxial transistor package |
US3733685A (en) * | 1968-11-25 | 1973-05-22 | Gen Motors Corp | Method of making a passivated wire bonded semiconductor device |
US3751293A (en) * | 1969-04-04 | 1973-08-07 | Bell Telephone Labor Inc | Method for reducing interdiffusion rates between thin film components |
US3654694A (en) * | 1969-04-28 | 1972-04-11 | Hughes Aircraft Co | Method for bonding contacts to and forming alloy sites on silicone carbide |
US3869260A (en) * | 1971-08-04 | 1975-03-04 | Ferranti Ltd | Manufacture of supports for use with semiconductor devices |
JPS59213145A (ja) * | 1983-05-18 | 1984-12-03 | Toshiba Corp | 半導体装置及びその製造方法 |
US4702941A (en) * | 1984-03-27 | 1987-10-27 | Motorola Inc. | Gold metallization process |
US4822641A (en) * | 1985-04-30 | 1989-04-18 | Inovan Gmbh & Co. Kg | Method of manufacturing a contact construction material structure |
US4753897A (en) * | 1986-03-14 | 1988-06-28 | Motorola Inc. | Method for providing contact separation in silicided devices using false gate |
US4998158A (en) * | 1987-06-01 | 1991-03-05 | Motorola, Inc. | Hypoeutectic ohmic contact to N-type gallium arsenide with diffusion barrier |
RU2564685C1 (ru) * | 2014-08-25 | 2015-10-10 | Олег Петрович Ксенофонтов | Способ сплавления |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
DE1018557B (de) * | 1954-08-26 | 1957-10-31 | Philips Nv | Verfahren zur Herstellung von gleichrichtenden Legierungskontakten auf einem Halbleiterkoerper |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2446254A (en) * | 1942-12-07 | 1948-08-03 | Hartford Nat Bank & Trust Co | Blocking-layer cell |
US2531660A (en) * | 1949-08-27 | 1950-11-28 | Bell Telephone Labor Inc | Fabrication of piezoelectric crystal units |
US2782492A (en) * | 1954-02-11 | 1957-02-26 | Atlas Powder Co | Method of bonding fine wires to copper or copper alloys |
NL107361C (US06291589-20010918-C00001.png) * | 1955-04-22 | 1900-01-01 | ||
US2763822A (en) * | 1955-05-10 | 1956-09-18 | Westinghouse Electric Corp | Silicon semiconductor devices |
US2824269A (en) * | 1956-01-17 | 1958-02-18 | Bell Telephone Labor Inc | Silicon translating devices and silicon alloys therefor |
DE1071847B (de) * | 1956-03-07 | 1959-12-24 | Western Electric Company, Incorporated, New York, N. Y. (V. St. A.) | Verfahren zur Herstellung einer im wesentlichen nicht gleichrichtenden flächenhaften Elektrode an dem Halbleiterkörper einer Halbleiteranordnung durch Legierung |
US2922092A (en) * | 1957-05-09 | 1960-01-19 | Westinghouse Electric Corp | Base contact members for semiconductor devices |
-
0
- BE BE575275D patent/BE575275A/xx unknown
- NL NL235742D patent/NL235742A/xx unknown
-
1958
- 1958-02-03 US US712804A patent/US3028663A/en not_active Expired - Lifetime
-
1959
- 1959-01-27 DE DEW24913A patent/DE1127488B/de active Pending
- 1959-01-30 GB GB3368/59A patent/GB911667A/en not_active Expired
- 1959-01-31 FR FR785474A patent/FR1226492A/fr not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
DE1018557B (de) * | 1954-08-26 | 1957-10-31 | Philips Nv | Verfahren zur Herstellung von gleichrichtenden Legierungskontakten auf einem Halbleiterkoerper |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1235434B (de) * | 1962-08-15 | 1967-03-02 | Ass Elect Ind | Verfahren zum Ausbilden eines Kurzschlusses zwischen der Emitterzone und der benachbarten Zone entgegengesetzten Leitungstyps eines steuerbaren Siliziumgleichrichterelementes |
DE1236081B (de) * | 1963-02-06 | 1967-03-09 | Itt Ind Ges Mit Beschraenkter | Verfahren zur Herstellung von ohmschen Kontakten an Halbleiterbauelementen |
DE1276826B (de) * | 1964-01-29 | 1968-09-05 | Itt Ind Ges Mit Beschraenkter | Verfahren zum Herstellen von Halbleiterbauelementen |
DE1286642B (de) * | 1964-03-30 | 1969-01-09 | Gen Electric | Verfahren zur Herstellung einer Halbleiteranordnung |
DE1274735B (de) * | 1964-08-21 | 1968-08-08 | Ibm Deutschland | Verfahren zum Herstellen von Legierungskontakten an Halbleiterkoerpern |
DE1514806B1 (de) * | 1965-04-10 | 1970-04-23 | Telefunken Patent | Verfahren zur Herstellung einer sperrenden oder nichtsperrenden Elektrode an einem Halbleiterkoerper sowie einer diese Elektrode kontaktierenden Leitbahn |
Also Published As
Publication number | Publication date |
---|---|
GB911667A (en) | 1962-11-28 |
FR1226492A (fr) | 1960-07-13 |
NL235742A (US06291589-20010918-C00001.png) | 1900-01-01 |
BE575275A (US06291589-20010918-C00001.png) | 1900-01-01 |
US3028663A (en) | 1962-04-10 |
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