DE112021007820B4 - Siliciumcarbid-halbleitereinrichtung und stromrichtereinrichtung, die die siliciumcarbid-halbleitereinrichtung verwendet - Google Patents

Siliciumcarbid-halbleitereinrichtung und stromrichtereinrichtung, die die siliciumcarbid-halbleitereinrichtung verwendet

Info

Publication number
DE112021007820B4
DE112021007820B4 DE112021007820.8T DE112021007820T DE112021007820B4 DE 112021007820 B4 DE112021007820 B4 DE 112021007820B4 DE 112021007820 T DE112021007820 T DE 112021007820T DE 112021007820 B4 DE112021007820 B4 DE 112021007820B4
Authority
DE
Germany
Prior art keywords
region
conductivity type
silicon carbide
semiconductor device
carbide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112021007820.8T
Other languages
German (de)
English (en)
Other versions
DE112021007820T5 (de
Inventor
Shiro Hino
Kotaro Kawahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE112021007820T5 publication Critical patent/DE112021007820T5/de
Application granted granted Critical
Publication of DE112021007820B4 publication Critical patent/DE112021007820B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Electrodes Of Semiconductors (AREA)
DE112021007820.8T 2021-06-14 2021-06-14 Siliciumcarbid-halbleitereinrichtung und stromrichtereinrichtung, die die siliciumcarbid-halbleitereinrichtung verwendet Active DE112021007820B4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/022527 WO2022264212A1 (ja) 2021-06-14 2021-06-14 炭化珪素半導体装置および炭化珪素半導体装置を用いた電力変換装置

Publications (2)

Publication Number Publication Date
DE112021007820T5 DE112021007820T5 (de) 2024-03-28
DE112021007820B4 true DE112021007820B4 (de) 2026-04-02

Family

ID=84525793

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021007820.8T Active DE112021007820B4 (de) 2021-06-14 2021-06-14 Siliciumcarbid-halbleitereinrichtung und stromrichtereinrichtung, die die siliciumcarbid-halbleitereinrichtung verwendet

Country Status (5)

Country Link
US (1) US20240274709A1 (https=)
JP (1) JP7573747B2 (https=)
CN (1) CN117461143A (https=)
DE (1) DE112021007820B4 (https=)
WO (1) WO2022264212A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234925A (ja) 2006-03-02 2007-09-13 National Institute Of Advanced Industrial & Technology ショットキーダイオードを内蔵した炭化ケイ素ｍｏｓ電界効果トランジスタおよびその製造方法
DE102019109706A1 (de) 2018-05-28 2019-11-28 Hitachi, Ltd. Halbleitervorrichtung und Verfahren zu deren Herstellung, Leistungsumwandlungsvorrichtung, Drehstrommotorsystem, Kraftfahrzeug sowie Schienenfahrzeug
DE112018006467T5 (de) 2017-12-19 2020-09-03 Mitsubishi Electric Corporation Siliciumcarbid-halbleiteranordnung und leistungswandler

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099630A (ja) 2010-11-02 2012-05-24 Panasonic Corp 半導体装置および電力変換器
JP6923457B2 (ja) 2018-01-19 2021-08-18 株式会社日立製作所 炭化ケイ素半導体装置およびその製造方法、電力変換装置、自動車並びに鉄道車両
JP6972382B2 (ja) 2018-11-30 2021-11-24 三菱電機株式会社 半導体装置
DE112019007687T5 (de) 2019-09-06 2022-06-15 Mitsubishi Electric Corporation Siliciumcarbid-halbleitereinheit und leistungswandler
JP7353925B2 (ja) 2019-11-11 2023-10-02 株式会社日立製作所 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234925A (ja) 2006-03-02 2007-09-13 National Institute Of Advanced Industrial & Technology ショットキーダイオードを内蔵した炭化ケイ素ｍｏｓ電界効果トランジスタおよびその製造方法
DE112018006467T5 (de) 2017-12-19 2020-09-03 Mitsubishi Electric Corporation Siliciumcarbid-halbleiteranordnung und leistungswandler
DE102019109706A1 (de) 2018-05-28 2019-11-28 Hitachi, Ltd. Halbleitervorrichtung und Verfahren zu deren Herstellung, Leistungsumwandlungsvorrichtung, Drehstrommotorsystem, Kraftfahrzeug sowie Schienenfahrzeug

Also Published As

Publication number Publication date
DE112021007820T5 (de) 2024-03-28
CN117461143A (zh) 2024-01-26
WO2022264212A1 (ja) 2022-12-22
JP7573747B2 (ja) 2024-10-25
US20240274709A1 (en) 2024-08-15
JPWO2022264212A1 (https=) 2022-12-22

Similar Documents

Publication Publication Date Title
DE112017005529B4 (de) Siliciumcarbid-halbleitereinheit und leistungswandlereinheit
DE112018001001B4 (de) Siliciumcarbid-halbleitereinheit und leistungswandler
DE112019007188B4 (de) Halbleitereinheit und leistungswandlereinheit
DE112017002221B4 (de) Halbleiterbauelement und Leistungswandlervorrichtung
DE112018006456B4 (de) Siliciumcarbid-Halbleitereinheit und Leistungswandler
DE102019206090A1 (de) Siliziumcarbid-Halbleitervorrichtung, Leistungswandler und Verfahren zum Herstellen einer Siliziumcarbid-Halbleitervorrichtung
DE112017007186B4 (de) Halbleitereinheit und leistungswandler
DE112018006450T5 (de) Siliciumcarbid-halbleiteranordnung und leistungswandler
DE112019002203B4 (de) Halbleitereinheit und leistungswandler
DE112018000992T5 (de) Siliciumcarbid-Halbleitereinheit und Leistungswandler
DE112018002471B4 (de) Halbleitereinheit und leistungswandlungsvorrichtung
DE112020007266T5 (de) Halbleitereinheit und Leistungswandler
DE112020007652T5 (de) Verfahren zur herstellung einer siliciumcarbid-halbleitereinheit, siliciumcarbidhalbleitereinheit und leistungswandlervorrichtung
DE112019007048T5 (de) Siliciumcarbid-halbleitereinheit und leistungswandler
DE112019006587T5 (de) Halbleitereinheit und leistungswandlereinheit
DE112018007915T5 (de) Halbleitereinheit und leistungswandler
DE112019006756T5 (de) Halbleiterelement und leistungswandlereinheit
DE112020007626T5 (de) Siliciumcarbid-halbleitereinheit und leistungswandlereinheit
DE102019216654A1 (de) Siliziumcarbid-Halbleitervorrichtung und Leistungsumwandlungseinrichtung
DE112018006467B4 (de) Siliciumcarbid-halbleiteranordnung und leistungswandler
DE112020007553T5 (de) Halbleitereinheit, Leistungswandlervorrichtung und Verfahren zur Herstellung einer Halbleitereinheit
DE112019007687T5 (de) Siliciumcarbid-halbleitereinheit und leistungswandler
DE102023102415A1 (de) Halbleitervorrichtung, Leistungsumwandlungseinrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
DE112014006726T5 (de) Halbleitervorrichtung, Leistungsmodul, Stromrichtvorrichtung, Fahrzeug und Schienenfahrzeug
DE112021007715T5 (de) Halbleitereinrichtung und stromrichtervorrichtung

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0027070000

Ipc: H10D0084000000

R084 Declaration of willingness to licence
R016 Response to examination communication
R018 Grant decision by examination section/examining division