JP7573747B2 - 炭化珪素半導体装置および炭化珪素半導体装置を用いた電力変換装置 - Google Patents

炭化珪素半導体装置および炭化珪素半導体装置を用いた電力変換装置 Download PDF

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JP7573747B2
JP7573747B2 JP2023529170A JP2023529170A JP7573747B2 JP 7573747 B2 JP7573747 B2 JP 7573747B2 JP 2023529170 A JP2023529170 A JP 2023529170A JP 2023529170 A JP2023529170 A JP 2023529170A JP 7573747 B2 JP7573747 B2 JP 7573747B2
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silicon carbide
semiconductor device
carbide semiconductor
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JPWO2022264212A5 (https=
JPWO2022264212A1 (https=
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史郎 日野
洸太朗 川原
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

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JP2023529170A 2021-06-14 2021-06-14 炭化珪素半導体装置および炭化珪素半導体装置を用いた電力変換装置 Active JP7573747B2 (ja)

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PCT/JP2021/022527 WO2022264212A1 (ja) 2021-06-14 2021-06-14 炭化珪素半導体装置および炭化珪素半導体装置を用いた電力変換装置

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JPWO2022264212A1 JPWO2022264212A1 (https=) 2022-12-22
JPWO2022264212A5 JPWO2022264212A5 (https=) 2023-09-28
JP7573747B2 true JP7573747B2 (ja) 2024-10-25

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US (1) US20240274709A1 (https=)
JP (1) JP7573747B2 (https=)
CN (1) CN117461143A (https=)
DE (1) DE112021007820B4 (https=)
WO (1) WO2022264212A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099630A (ja) 2010-11-02 2012-05-24 Panasonic Corp 半導体装置および電力変換器
WO2019124384A1 (ja) 2017-12-19 2019-06-27 三菱電機株式会社 炭化珪素半導体装置および電力変換装置
JP2019125760A (ja) 2018-01-19 2019-07-25 株式会社日立製作所 炭化ケイ素半導体装置およびその製造方法、電力変換装置、自動車並びに鉄道車両
WO2020110285A1 (ja) 2018-11-30 2020-06-04 三菱電機株式会社 半導体装置
WO2021044624A1 (ja) 2019-09-06 2021-03-11 三菱電機株式会社 炭化珪素半導体装置および電力変換装置
JP2021077774A (ja) 2019-11-11 2021-05-20 株式会社日立製作所 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4900662B2 (ja) 2006-03-02 2012-03-21 独立行政法人産業技術総合研究所 ショットキーダイオードを内蔵した炭化ケイ素ｍｏｓ電界効果トランジスタおよびその製造方法
JP7002998B2 (ja) 2018-05-28 2022-01-20 株式会社日立製作所 半導体装置及びその製造方法、電力変換装置、３相モータシステム、自動車、並びに鉄道車両

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099630A (ja) 2010-11-02 2012-05-24 Panasonic Corp 半導体装置および電力変換器
WO2019124384A1 (ja) 2017-12-19 2019-06-27 三菱電機株式会社 炭化珪素半導体装置および電力変換装置
JP2019125760A (ja) 2018-01-19 2019-07-25 株式会社日立製作所 炭化ケイ素半導体装置およびその製造方法、電力変換装置、自動車並びに鉄道車両
WO2020110285A1 (ja) 2018-11-30 2020-06-04 三菱電機株式会社 半導体装置
WO2021044624A1 (ja) 2019-09-06 2021-03-11 三菱電機株式会社 炭化珪素半導体装置および電力変換装置
JP2021077774A (ja) 2019-11-11 2021-05-20 株式会社日立製作所 半導体装置

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Publication number Publication date
DE112021007820T5 (de) 2024-03-28
CN117461143A (zh) 2024-01-26
DE112021007820B4 (de) 2026-04-02
WO2022264212A1 (ja) 2022-12-22
US20240274709A1 (en) 2024-08-15
JPWO2022264212A1 (https=) 2022-12-22

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