DE112020003133T5 - Bildgebungsvorrichtung - Google Patents

Bildgebungsvorrichtung Download PDF

Info

Publication number
DE112020003133T5
DE112020003133T5 DE112020003133.0T DE112020003133T DE112020003133T5 DE 112020003133 T5 DE112020003133 T5 DE 112020003133T5 DE 112020003133 T DE112020003133 T DE 112020003133T DE 112020003133 T5 DE112020003133 T5 DE 112020003133T5
Authority
DE
Germany
Prior art keywords
substrate
semiconductor substrate
pixel
imaging device
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112020003133.0T
Other languages
German (de)
English (en)
Inventor
Katsunori Hiramatsu
Shintaro Okamoto
Yoshiaki Kitano
Yuya MAEDA
Shinya Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of DE112020003133T5 publication Critical patent/DE112020003133T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE112020003133.0T 2019-06-26 2020-06-17 Bildgebungsvorrichtung Pending DE112020003133T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019119127 2019-06-26
JP2019-119127 2019-06-26
PCT/JP2020/023702 WO2020262131A1 (ja) 2019-06-26 2020-06-17 撮像装置

Publications (1)

Publication Number Publication Date
DE112020003133T5 true DE112020003133T5 (de) 2022-03-10

Family

ID=74061991

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112020003133.0T Pending DE112020003133T5 (de) 2019-06-26 2020-06-17 Bildgebungsvorrichtung

Country Status (7)

Country Link
US (2) US12349478B2 (https=)
JP (1) JPWO2020262131A1 (https=)
KR (1) KR102916763B1 (https=)
CN (1) CN113906564A (https=)
DE (1) DE112020003133T5 (https=)
TW (2) TWI893933B (https=)
WO (1) WO2020262131A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4280282A1 (en) * 2022-05-18 2023-11-22 Canon Kabushiki Kaisha Radiation detector and radiation imaging system

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11749609B2 (en) * 2018-06-29 2023-09-05 Sony Semiconductor Solutions Corporation Semiconductor device and method of manufacturing semiconductor device
KR102921938B1 (ko) 2021-04-16 2026-02-02 삼성전자 주식회사 이미지 센서
JP7802782B2 (ja) * 2021-05-27 2026-01-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の製造方法および電子機器
TW202329435A (zh) * 2021-11-30 2023-07-16 日商索尼半導體解決方案公司 光檢測裝置、電子機器及光檢測系統
JP2023130928A (ja) * 2022-03-08 2023-09-21 ソニーセミコンダクタソリューションズ株式会社 半導体装置、光検出装置、及び電子機器
WO2023176449A1 (ja) * 2022-03-15 2023-09-21 ソニーセミコンダクタソリューションズ株式会社 光検出装置
TW202410428A (zh) * 2022-03-15 2024-03-01 日商索尼半導體解決方案公司 光檢測裝置
TW202433734A (zh) * 2022-11-28 2024-08-16 日商索尼半導體解決方案公司 半導體裝置及電子機器
CN121753507A (zh) * 2023-10-19 2026-03-27 索尼半导体解决方案公司 光检测装置和固态成像装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010245506A (ja) 2009-03-19 2010-10-28 Sony Corp 半導体装置とその製造方法、及び電子機器

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4551603B2 (ja) 2002-03-11 2010-09-29 ソニー株式会社 固体撮像素子及びその製造方法
JP2006100620A (ja) 2004-09-30 2006-04-13 Sony Corp 固体撮像素子及び半導体装置
JP5482025B2 (ja) * 2009-08-28 2014-04-23 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2012015417A (ja) 2010-07-02 2012-01-19 Toshiba Corp 固体撮像装置
JP2013038118A (ja) 2011-08-04 2013-02-21 Sony Corp 固体撮像素子および電子機器
JP6018376B2 (ja) * 2011-12-05 2016-11-02 キヤノン株式会社 固体撮像装置およびカメラ
JP2013191639A (ja) 2012-03-12 2013-09-26 Nippon Hoso Kyokai <Nhk> 積層型半導体装置及びその製造方法
US9153565B2 (en) 2012-06-01 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensors with a high fill-factor
JP6221341B2 (ja) 2013-05-16 2017-11-01 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法および電子機器
JP2015005690A (ja) 2013-06-24 2015-01-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2015029013A (ja) 2013-07-30 2015-02-12 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
JP2015032687A (ja) * 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
JP2016039315A (ja) 2014-08-08 2016-03-22 株式会社東芝 固体撮像素子
CN107409184B (zh) 2015-03-13 2020-09-18 索尼半导体解决方案公司 固态成像元件、驱动方法以及电子设备
US9620548B1 (en) * 2015-10-30 2017-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with wide contact
KR102541701B1 (ko) 2016-01-15 2023-06-13 삼성전자주식회사 씨모스 이미지 센서
US10103190B2 (en) * 2016-05-13 2018-10-16 Semiconductor Components Industries, Llc Imaging sensor having floating region of imaging device on one substrate electrically coupled to another floating region formed on a second substrate
KR102582122B1 (ko) * 2016-07-11 2023-09-21 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치
KR102643521B1 (ko) 2016-09-29 2024-03-06 에스케이하이닉스 주식회사 이미지 센서 및 그 제조방법
JP2018101699A (ja) * 2016-12-20 2018-06-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、固体撮像装置の製造方法および電子機器
KR102622057B1 (ko) * 2016-12-29 2024-01-05 삼성전자주식회사 이미지 센서
KR102652981B1 (ko) * 2017-01-16 2024-04-02 삼성전자주식회사 이미지 센서
JP6976744B2 (ja) 2017-06-29 2021-12-08 キヤノン株式会社 撮像装置、撮像システム、および、移動体
KR102506885B1 (ko) * 2018-02-27 2023-03-06 삼성전자주식회사 이미지 센서
KR102721025B1 (ko) * 2019-01-03 2024-10-24 삼성전자주식회사 이미지 센서 및 이의 제조 방법
US11502120B2 (en) * 2019-12-19 2022-11-15 Omnivision Technologies, Inc. Negatively biased isolation structures for pixel devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010245506A (ja) 2009-03-19 2010-10-28 Sony Corp 半導体装置とその製造方法、及び電子機器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4280282A1 (en) * 2022-05-18 2023-11-22 Canon Kabushiki Kaisha Radiation detector and radiation imaging system
US12442940B2 (en) 2022-05-18 2025-10-14 Canon Kabushiki Kaisha Radiation detector and radiation imaging system

Also Published As

Publication number Publication date
CN113906564A (zh) 2022-01-07
US20250275265A1 (en) 2025-08-28
KR20220023764A (ko) 2022-03-02
TW202450079A (zh) 2024-12-16
US20220238590A1 (en) 2022-07-28
TW202114186A (zh) 2021-04-01
TWI893933B (zh) 2025-08-11
JPWO2020262131A1 (https=) 2020-12-30
US12349478B2 (en) 2025-07-01
KR102916763B1 (ko) 2026-01-26
KR20250073551A (ko) 2025-05-27
WO2020262131A1 (ja) 2020-12-30
TWI853953B (zh) 2024-09-01

Similar Documents

Publication Publication Date Title
DE112020003133T5 (de) Bildgebungsvorrichtung
DE112018006695T5 (de) Bildgebungselement
DE112019006136T5 (de) Bildgebungsvorrichtung und elektronische vorrichtung
DE112020003145T5 (de) Festkörperbildgebungsvorrichtung
DE112020003038T5 (de) Halbleitervorrichtung und verfahren zur herstellung derselben
DE112019005424T5 (de) Festkörper-Bildgebungselement und Bildgebungsvorrichtung
DE112021001917T5 (de) Bildgebungsvorrichtung und elektronische vorrichtung
DE112019005071T5 (de) Halbleitervorrichtung und festkörperbildsensor
DE112019006318T5 (de) Bildgebungsvorrichtung
CN119451260A (zh) 光检测装置
DE112021002028T5 (de) Abbildungsvorrichtung und elektronische vorrichtung
DE112020003071T5 (de) Festkörper-bildgebungsvorrichtung
DE112018006564T5 (de) Fotoelektrischer wandler und festkörper-bildgebungsvorrichtung
DE112021001902T5 (de) Abbildungsvorrichtung und elektronische vorrichtung
DE112021005467T5 (de) Bildgebungsvorrichtung und elektronische einrichtung
DE112022004720T5 (de) Lichtdetektionselement und lichtdetektionsvorrichtung
DE112021006412T5 (de) Lichtempfangselement, lichtempfangsvorrichtung und elektronische vorrichtung
DE112022004422T5 (de) Lichtdetektionsvorrichtung, verfahren zum herstellen einer lichtdetektionsvorrichtung und elektronische ausrüstung
DE112022001686T5 (de) Bildgebungselement und bildgebungsvorrichtung
DE112020003121T5 (de) Halbleitervorrichtung und bilderzeugungsvorrichtung
DE112021001693T5 (de) Bildgebungsvorrichtung und elektronische einrichtung
DE112018006764T5 (de) Halbleitervorrichtung
DE112022001031T5 (de) Fotoelektrisches umwandlungselement und elektronische vorrichtung
DE112021006510T5 (de) Fotoelektrisches umwandlungselement, lichtdetektionsvorrichtung, lichtdetektionssystem, elektronische einrichtung und sich bewegender körper
DE112021004003T5 (de) Fotoelektrisches umwandlungselement und bildgebungsvorrichtung

Legal Events

Date Code Title Description
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0027146000

Ipc: H10F0039180000