CN113906564A - 成像装置 - Google Patents

成像装置 Download PDF

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Publication number
CN113906564A
CN113906564A CN202080033096.5A CN202080033096A CN113906564A CN 113906564 A CN113906564 A CN 113906564A CN 202080033096 A CN202080033096 A CN 202080033096A CN 113906564 A CN113906564 A CN 113906564A
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substrate
semiconductor substrate
pixel
electrode
imaging device
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CN202080033096.5A
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Chinese (zh)
Inventor
平松克规
冈本晋太郎
北野良昭
前田雄也
佐藤信也
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Publication of CN113906564A publication Critical patent/CN113906564A/zh
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202080033096.5A 2019-06-26 2020-06-17 成像装置 Pending CN113906564A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019119127 2019-06-26
JP2019-119127 2019-06-26
PCT/JP2020/023702 WO2020262131A1 (ja) 2019-06-26 2020-06-17 撮像装置

Publications (1)

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CN113906564A true CN113906564A (zh) 2022-01-07

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US (2) US12349478B2 (https=)
JP (1) JPWO2020262131A1 (https=)
KR (1) KR102916763B1 (https=)
CN (1) CN113906564A (https=)
DE (1) DE112020003133T5 (https=)
TW (2) TWI893933B (https=)
WO (1) WO2020262131A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4496004A4 (en) * 2022-03-15 2025-10-15 Sony Semiconductor Solutions Corp LIGHT DETECTION DEVICE

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11749609B2 (en) * 2018-06-29 2023-09-05 Sony Semiconductor Solutions Corporation Semiconductor device and method of manufacturing semiconductor device
KR102921938B1 (ko) 2021-04-16 2026-02-02 삼성전자 주식회사 이미지 센서
JP7802782B2 (ja) * 2021-05-27 2026-01-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の製造方法および電子機器
TW202329435A (zh) * 2021-11-30 2023-07-16 日商索尼半導體解決方案公司 光檢測裝置、電子機器及光檢測系統
JP2023130928A (ja) * 2022-03-08 2023-09-21 ソニーセミコンダクタソリューションズ株式会社 半導体装置、光検出装置、及び電子機器
TW202410428A (zh) * 2022-03-15 2024-03-01 日商索尼半導體解決方案公司 光檢測裝置
EP4280282A1 (en) * 2022-05-18 2023-11-22 Canon Kabushiki Kaisha Radiation detector and radiation imaging system
TW202433734A (zh) * 2022-11-28 2024-08-16 日商索尼半導體解決方案公司 半導體裝置及電子機器
CN121753507A (zh) * 2023-10-19 2026-03-27 索尼半导体解决方案公司 光检测装置和固态成像装置

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003264281A (ja) * 2002-03-11 2003-09-19 Sony Corp 固体撮像素子及びその製造方法
JP2011049445A (ja) * 2009-08-28 2011-03-10 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2013038118A (ja) * 2011-08-04 2013-02-21 Sony Corp 固体撮像素子および電子機器
JP2013118345A (ja) * 2011-12-05 2013-06-13 Canon Inc 固体撮像装置、カメラおよび固体撮像装置の設計方法
JP2013191639A (ja) * 2012-03-12 2013-09-26 Nippon Hoso Kyokai <Nhk> 積層型半導体装置及びその製造方法
JP2015005690A (ja) * 2013-06-24 2015-01-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2015032687A (ja) * 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
CN105009292A (zh) * 2013-05-16 2015-10-28 索尼公司 固态摄像器件、固态摄像器件的制造方法以及电子装置
JP2016039315A (ja) * 2014-08-08 2016-03-22 株式会社東芝 固体撮像素子
WO2016147837A1 (ja) * 2015-03-13 2016-09-22 ソニー株式会社 固体撮像素子、駆動方法、および電子機器
US20170125473A1 (en) * 2015-10-30 2017-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with wide contact
JP2018101699A (ja) * 2016-12-20 2018-06-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、固体撮像装置の製造方法および電子機器
US20180190694A1 (en) * 2016-12-29 2018-07-05 Samsung Electronics Co., Ltd. Image sensor
JP2019012905A (ja) * 2017-06-29 2019-01-24 キヤノン株式会社 撮像装置、撮像システム、および、移動体

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006100620A (ja) 2004-09-30 2006-04-13 Sony Corp 固体撮像素子及び半導体装置
JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP2012015417A (ja) 2010-07-02 2012-01-19 Toshiba Corp 固体撮像装置
US9153565B2 (en) 2012-06-01 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensors with a high fill-factor
JP2015029013A (ja) 2013-07-30 2015-02-12 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
KR102541701B1 (ko) 2016-01-15 2023-06-13 삼성전자주식회사 씨모스 이미지 센서
US10103190B2 (en) * 2016-05-13 2018-10-16 Semiconductor Components Industries, Llc Imaging sensor having floating region of imaging device on one substrate electrically coupled to another floating region formed on a second substrate
KR102582122B1 (ko) * 2016-07-11 2023-09-21 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치
KR102643521B1 (ko) 2016-09-29 2024-03-06 에스케이하이닉스 주식회사 이미지 센서 및 그 제조방법
KR102652981B1 (ko) * 2017-01-16 2024-04-02 삼성전자주식회사 이미지 센서
KR102506885B1 (ko) * 2018-02-27 2023-03-06 삼성전자주식회사 이미지 센서
KR102721025B1 (ko) * 2019-01-03 2024-10-24 삼성전자주식회사 이미지 센서 및 이의 제조 방법
US11502120B2 (en) * 2019-12-19 2022-11-15 Omnivision Technologies, Inc. Negatively biased isolation structures for pixel devices

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003264281A (ja) * 2002-03-11 2003-09-19 Sony Corp 固体撮像素子及びその製造方法
JP2011049445A (ja) * 2009-08-28 2011-03-10 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2013038118A (ja) * 2011-08-04 2013-02-21 Sony Corp 固体撮像素子および電子機器
JP2013118345A (ja) * 2011-12-05 2013-06-13 Canon Inc 固体撮像装置、カメラおよび固体撮像装置の設計方法
JP2013191639A (ja) * 2012-03-12 2013-09-26 Nippon Hoso Kyokai <Nhk> 積層型半導体装置及びその製造方法
CN105009292A (zh) * 2013-05-16 2015-10-28 索尼公司 固态摄像器件、固态摄像器件的制造方法以及电子装置
JP2015005690A (ja) * 2013-06-24 2015-01-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2015032687A (ja) * 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
JP2016039315A (ja) * 2014-08-08 2016-03-22 株式会社東芝 固体撮像素子
WO2016147837A1 (ja) * 2015-03-13 2016-09-22 ソニー株式会社 固体撮像素子、駆動方法、および電子機器
US20170125473A1 (en) * 2015-10-30 2017-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with wide contact
JP2018101699A (ja) * 2016-12-20 2018-06-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、固体撮像装置の製造方法および電子機器
US20180190694A1 (en) * 2016-12-29 2018-07-05 Samsung Electronics Co., Ltd. Image sensor
JP2019012905A (ja) * 2017-06-29 2019-01-24 キヤノン株式会社 撮像装置、撮像システム、および、移動体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4496004A4 (en) * 2022-03-15 2025-10-15 Sony Semiconductor Solutions Corp LIGHT DETECTION DEVICE

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DE112020003133T5 (de) 2022-03-10
US20250275265A1 (en) 2025-08-28
KR20220023764A (ko) 2022-03-02
TW202450079A (zh) 2024-12-16
US20220238590A1 (en) 2022-07-28
TW202114186A (zh) 2021-04-01
TWI893933B (zh) 2025-08-11
JPWO2020262131A1 (https=) 2020-12-30
US12349478B2 (en) 2025-07-01
KR102916763B1 (ko) 2026-01-26
KR20250073551A (ko) 2025-05-27
WO2020262131A1 (ja) 2020-12-30
TWI853953B (zh) 2024-09-01

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