DE112019002037B4 - Lichtemittierende Halbleiterelemente und Verfahren zu deren Herstellung - Google Patents
Lichtemittierende Halbleiterelemente und Verfahren zu deren Herstellung Download PDFInfo
- Publication number
- DE112019002037B4 DE112019002037B4 DE112019002037.4T DE112019002037T DE112019002037B4 DE 112019002037 B4 DE112019002037 B4 DE 112019002037B4 DE 112019002037 T DE112019002037 T DE 112019002037T DE 112019002037 B4 DE112019002037 B4 DE 112019002037B4
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- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 238000000034 method Methods 0.000 title description 17
- 238000005253 cladding Methods 0.000 claims abstract description 155
- 239000000758 substrate Substances 0.000 claims abstract description 111
- 230000003746 surface roughness Effects 0.000 claims abstract description 45
- 229910052738 indium Inorganic materials 0.000 claims abstract description 37
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims description 82
- 239000002184 metal Substances 0.000 claims description 82
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- 238000005530 etching Methods 0.000 claims description 48
- 238000007788 roughening Methods 0.000 claims description 45
- 238000000295 emission spectrum Methods 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 25
- 230000015572 biosynthetic process Effects 0.000 claims description 22
- 229910052733 gallium Inorganic materials 0.000 claims description 8
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-080899 | 2018-04-19 | ||
| JP2018080899 | 2018-04-19 | ||
| PCT/JP2019/016713 WO2019203329A1 (ja) | 2018-04-19 | 2019-04-18 | 半導体発光素子およびその製造方法 |
| JP2019079334A JP6648329B2 (ja) | 2018-04-19 | 2019-04-18 | 半導体発光素子およびその製造方法 |
| JP2019-079334 | 2019-04-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE112019002037T5 DE112019002037T5 (de) | 2021-01-14 |
| DE112019002037B4 true DE112019002037B4 (de) | 2024-05-08 |
Family
ID=68390966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112019002037.4T Active DE112019002037B4 (de) | 2018-04-19 | 2019-04-18 | Lichtemittierende Halbleiterelemente und Verfahren zu deren Herstellung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11515448B2 (ko) |
| JP (1) | JP6648329B2 (ko) |
| KR (1) | KR102419420B1 (ko) |
| CN (1) | CN111971805A (ko) |
| DE (1) | DE112019002037B4 (ko) |
| TW (1) | TWI702734B (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6903210B2 (ja) * | 2019-10-15 | 2021-07-14 | Ｄｏｗａエレクトロニクス株式会社 | 半導体発光素子及びその製造方法 |
| KR20210157935A (ko) * | 2020-06-22 | 2021-12-30 | 삼성디스플레이 주식회사 | 광학 검사 장치 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06237042A (ja) | 1993-02-12 | 1994-08-23 | Nec Corp | 半導体歪量子井戸構造 |
| JPH07147454A (ja) | 1993-11-26 | 1995-06-06 | Hitachi Ltd | 半導体素子 |
| JP2008186495A (ja) | 2007-01-26 | 2008-08-14 | Fujifilm Corp | 記録テープカートリッジ |
| JP2009032866A (ja) | 2007-07-26 | 2009-02-12 | Nichia Corp | 発光装置 |
| JP2011216882A (ja) | 2010-03-31 | 2011-10-27 | Seoul Opto Devices Co Ltd | 高効率発光ダイオード及びその製造方法 |
| JP2014120695A (ja) | 2012-12-19 | 2014-06-30 | Rohm Co Ltd | 半導体発光素子 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10051465A1 (de) * | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
| US8871547B2 (en) * | 2005-01-11 | 2014-10-28 | SemiLEDs Optoelectronics Co., Ltd. | Method for fabricating vertical light emitting diode (VLED) structure using a laser pulse to remove a carrier substrate |
| US8318519B2 (en) * | 2005-01-11 | 2012-11-27 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
| US8110425B2 (en) * | 2007-03-20 | 2012-02-07 | Luminus Devices, Inc. | Laser liftoff structure and related methods |
| WO2014192428A1 (ja) * | 2013-05-31 | 2014-12-04 | ウシオ電機株式会社 | 窒化物半導体発光素子及びその製造方法 |
| KR102098937B1 (ko) * | 2014-01-27 | 2020-04-08 | 엘지이노텍 주식회사 | 발광소자 |
| JP2016012610A (ja) * | 2014-06-27 | 2016-01-21 | 旭化成イーマテリアルズ株式会社 | 半導体発光素子 |
| JP6197799B2 (ja) * | 2015-01-09 | 2017-09-20 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
| US9847454B2 (en) * | 2015-10-02 | 2017-12-19 | Epistar Corporation | Light-emitting device |
| TWI628808B (zh) | 2016-05-31 | 2018-07-01 | 晶元光電股份有限公司 | 發光元件 |
| JP6452651B2 (ja) | 2016-06-30 | 2019-01-16 | Ｄｏｗａエレクトロニクス株式会社 | 半導体光デバイスの製造方法および半導体光デバイス |
| JP6631425B2 (ja) * | 2016-07-06 | 2020-01-15 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
| JP6608352B2 (ja) * | 2016-12-20 | 2019-11-20 | Ｄｏｗａエレクトロニクス株式会社 | 半導体発光素子およびその製造方法 |
| JP2019114650A (ja) * | 2017-12-22 | 2019-07-11 | Ｄｏｗａエレクトロニクス株式会社 | 半導体発光素子およびその製造方法 |
| JP6785331B2 (ja) * | 2018-03-30 | 2020-11-18 | Ｄｏｗａエレクトロニクス株式会社 | 半導体光デバイスの製造方法及び半導体光デバイスの中間体 |
-
2019
- 2019-04-18 CN CN201980025987.3A patent/CN111971805A/zh active Pending
- 2019-04-18 JP JP2019079334A patent/JP6648329B2/ja active Active
- 2019-04-18 US US17/047,690 patent/US11515448B2/en active Active
- 2019-04-18 KR KR1020207029305A patent/KR102419420B1/ko active IP Right Grant
- 2019-04-18 DE DE112019002037.4T patent/DE112019002037B4/de active Active
- 2019-04-19 TW TW108113898A patent/TWI702734B/zh active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06237042A (ja) | 1993-02-12 | 1994-08-23 | Nec Corp | 半導体歪量子井戸構造 |
| JPH07147454A (ja) | 1993-11-26 | 1995-06-06 | Hitachi Ltd | 半導体素子 |
| JP2008186495A (ja) | 2007-01-26 | 2008-08-14 | Fujifilm Corp | 記録テープカートリッジ |
| JP2009032866A (ja) | 2007-07-26 | 2009-02-12 | Nichia Corp | 発光装置 |
| JP2011216882A (ja) | 2010-03-31 | 2011-10-27 | Seoul Opto Devices Co Ltd | 高効率発光ダイオード及びその製造方法 |
| JP2014120695A (ja) | 2012-12-19 | 2014-06-30 | Rohm Co Ltd | 半導体発光素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6648329B2 (ja) | 2020-02-14 |
| CN111971805A (zh) | 2020-11-20 |
| KR20200127252A (ko) | 2020-11-10 |
| US11515448B2 (en) | 2022-11-29 |
| TWI702734B (zh) | 2020-08-21 |
| TW202002327A (zh) | 2020-01-01 |
| US20210167249A1 (en) | 2021-06-03 |
| KR102419420B1 (ko) | 2022-07-11 |
| JP2019192909A (ja) | 2019-10-31 |
| DE112019002037T5 (de) | 2021-01-14 |
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