DE112013006244B4 - Verfahren zur Herstellung einer Verbundstruktur - Google Patents

Verfahren zur Herstellung einer Verbundstruktur Download PDF

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Publication number
DE112013006244B4
DE112013006244B4 DE112013006244.5T DE112013006244T DE112013006244B4 DE 112013006244 B4 DE112013006244 B4 DE 112013006244B4 DE 112013006244 T DE112013006244 T DE 112013006244T DE 112013006244 B4 DE112013006244 B4 DE 112013006244B4
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DE
Germany
Prior art keywords
monocrystalline silicon
silicon substrate
front surface
wafer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112013006244.5T
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German (de)
English (en)
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DE112013006244T5 (de
Inventor
Jeffrey Louis Libbert
Michael J. Ries
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
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GlobalWafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of DE112013006244T5 publication Critical patent/DE112013006244T5/de
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Publication of DE112013006244B4 publication Critical patent/DE112013006244B4/de
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
DE112013006244.5T 2012-12-28 2013-12-23 Verfahren zur Herstellung einer Verbundstruktur Active DE112013006244B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261746822P 2012-12-28 2012-12-28
US61/746,822 2012-12-28
PCT/US2013/077491 WO2014105828A1 (en) 2012-12-28 2013-12-23 Method for low temperature layer transfer in the preparation of multilayer semiconductor devices

Publications (2)

Publication Number Publication Date
DE112013006244T5 DE112013006244T5 (de) 2015-10-08
DE112013006244B4 true DE112013006244B4 (de) 2020-03-05

Family

ID=50031514

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112013006244.5T Active DE112013006244B4 (de) 2012-12-28 2013-12-23 Verfahren zur Herstellung einer Verbundstruktur

Country Status (6)

Country Link
US (1) US9281233B2 (enExample)
JP (2) JP2016508291A (enExample)
KR (1) KR102026506B1 (enExample)
DE (1) DE112013006244B4 (enExample)
TW (1) TWI603387B (enExample)
WO (1) WO2014105828A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015210384A1 (de) 2015-06-05 2016-12-08 Soitec Verfahren zur mechanischen Trennung für eine Doppelschichtübertragung
JP6632462B2 (ja) * 2016-04-28 2020-01-22 信越化学工業株式会社 複合ウェーハの製造方法
CN112262467B (zh) * 2018-06-08 2024-08-09 环球晶圆股份有限公司 将硅薄层移转的方法
CN110739217B (zh) * 2019-10-28 2025-10-10 沈阳硅基科技有限公司 一种降低soi硅片应力的制备方法
PL445432A1 (pl) * 2023-06-30 2025-01-07 Sieć Badawcza Łukasiewicz - Instytut Mikroelektroniki I Fotoniki Sposób modyfikacji podłoża z monokrystalicznego SiC, zmodyfikowane podłoże, urządzenie zawierające takie podłoże i zastosowanie takiego urządzenia

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5189500A (en) * 1989-09-22 1993-02-23 Mitsubishi Denki Kabushiki Kaisha Multi-layer type semiconductor device with semiconductor element layers stacked in opposite directions and manufacturing method thereof
US20070037363A1 (en) * 2002-11-07 2007-02-15 Bernard Aspar Method for forming a brittle zone in a substrate by co-implantation
US20070212852A1 (en) * 2006-03-13 2007-09-13 Tauzin Aurelie Method of fabricating a thin film
US20100127343A1 (en) * 2008-11-26 2010-05-27 Christopher Paul Daigler Glass-Ceramic-Based Semiconductor-On-Insulator Structures and Method For Making The Same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
FR2774511B1 (fr) * 1998-01-30 2002-10-11 Commissariat Energie Atomique Substrat compliant en particulier pour un depot par hetero-epitaxie
JP3456521B2 (ja) * 1998-05-12 2003-10-14 三菱住友シリコン株式会社 Ｓｏｉ基板の製造方法
FR2797347B1 (fr) * 1999-08-04 2001-11-23 Commissariat Energie Atomique Procede de transfert d'une couche mince comportant une etape de surfragililisation
FR2809867B1 (fr) * 2000-05-30 2003-10-24 Commissariat Energie Atomique Substrat fragilise et procede de fabrication d'un tel substrat
KR100511656B1 (ko) * 2002-08-10 2005-09-07 주식회사 실트론 나노 에스오아이 웨이퍼의 제조방법 및 그에 따라 제조된나노 에스오아이 웨이퍼
US20060240275A1 (en) * 2005-04-25 2006-10-26 Gadkaree Kishor P Flexible display substrates
FR2914110B1 (fr) * 2007-03-20 2009-06-05 Soitec Silicon On Insulator Procede de fabrication d'un substrat hybride
US7575988B2 (en) * 2006-07-11 2009-08-18 S.O.I.Tec Silicon On Insulator Technologies Method of fabricating a hybrid substrate
JP2008153411A (ja) * 2006-12-18 2008-07-03 Shin Etsu Chem Co Ltd Ｓｏｉ基板の製造方法
US7795111B2 (en) * 2007-06-27 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate and manufacturing method of semiconductor device
JP4631946B2 (ja) * 2008-08-11 2011-02-16 住友電気工業株式会社 Ｉｉｉ族窒化物半導体層貼り合わせ基板の製造方法
JP2010278342A (ja) * 2009-05-29 2010-12-09 Shin-Etsu Chemical Co Ltd Ｓｏｉ基板の製造方法
US8367519B2 (en) * 2009-12-30 2013-02-05 Memc Electronic Materials, Inc. Method for the preparation of a multi-layered crystalline structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5189500A (en) * 1989-09-22 1993-02-23 Mitsubishi Denki Kabushiki Kaisha Multi-layer type semiconductor device with semiconductor element layers stacked in opposite directions and manufacturing method thereof
US20070037363A1 (en) * 2002-11-07 2007-02-15 Bernard Aspar Method for forming a brittle zone in a substrate by co-implantation
US20070212852A1 (en) * 2006-03-13 2007-09-13 Tauzin Aurelie Method of fabricating a thin film
US20100127343A1 (en) * 2008-11-26 2010-05-27 Christopher Paul Daigler Glass-Ceramic-Based Semiconductor-On-Insulator Structures and Method For Making The Same

Also Published As

Publication number Publication date
WO2014105828A1 (en) 2014-07-03
US9281233B2 (en) 2016-03-08
DE112013006244T5 (de) 2015-10-08
JP2016508291A (ja) 2016-03-17
JP2018085536A (ja) 2018-05-31
KR102026506B1 (ko) 2019-09-27
KR20150099847A (ko) 2015-09-01
US20140187020A1 (en) 2014-07-03
TWI603387B (zh) 2017-10-21
TW201435991A (zh) 2014-09-16

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Owner name: GLOBALWAFERS CO., LTD., TW

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Representative=s name: MAIWALD PATENTANWALTS- UND RECHTSANWALTSGESELL, DE

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R079 Amendment of ipc main class

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