PL445432A1 - Sposób modyfikacji podłoża z monokrystalicznego SiC, zmodyfikowane podłoże, urządzenie zawierające takie podłoże i zastosowanie takiego urządzenia - Google Patents

Sposób modyfikacji podłoża z monokrystalicznego SiC, zmodyfikowane podłoże, urządzenie zawierające takie podłoże i zastosowanie takiego urządzenia

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Publication number
PL445432A1
PL445432A1 PL445432A PL44543223A PL445432A1 PL 445432 A1 PL445432 A1 PL 445432A1 PL 445432 A PL445432 A PL 445432A PL 44543223 A PL44543223 A PL 44543223A PL 445432 A1 PL445432 A1 PL 445432A1
Authority
PL
Poland
Prior art keywords
substrate
modifying
modified
monocrystalline sic
sic substrate
Prior art date
Application number
PL445432A
Other languages
English (en)
Inventor
Tymoteusz Ciuk
Roman Kozłowski
Agata Romanowska
Karolina Piętka-Jurczak
Beata Stańczyk
Krystyna Przyborowska
Artur Dobrowolski
Jakub Jagiełło
Dariusz Czołak
Paweł Kamiński
Original Assignee
Sieć Badawcza Łukasiewicz - Instytut Mikroelektroniki I Fotoniki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sieć Badawcza Łukasiewicz - Instytut Mikroelektroniki I Fotoniki filed Critical Sieć Badawcza Łukasiewicz - Instytut Mikroelektroniki I Fotoniki
Priority to PL445432A priority Critical patent/PL445432A1/pl
Publication of PL445432A1 publication Critical patent/PL445432A1/pl

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Hall/Mr Elements (AREA)

Abstract

Niniejsze zgłoszenie ujawnia sposób modyfikacji podłoża z monokrystalicznego SiC, w którym strona krzemowa SiC jest poddawana implantacji przez bombardowanie jonowe dawką jonów wodoru H+ lub helu He+. Niniejsze rozwiązanie dotyczy również zmodyfikowanego podłoża z monokrystalicznego SiC otrzymanego takim sposobem, jak również urządzenia zawierającego takie podłoże, w szczególności czujnika efektu Halla, oraz zastosowania takiego urządzenia w wysokotemperaturowej detekcji pola magnetycznego.
PL445432A 2023-06-30 2023-06-30 Sposób modyfikacji podłoża z monokrystalicznego SiC, zmodyfikowane podłoże, urządzenie zawierające takie podłoże i zastosowanie takiego urządzenia PL445432A1 (pl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL445432A PL445432A1 (pl) 2023-06-30 2023-06-30 Sposób modyfikacji podłoża z monokrystalicznego SiC, zmodyfikowane podłoże, urządzenie zawierające takie podłoże i zastosowanie takiego urządzenia

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL445432A PL445432A1 (pl) 2023-06-30 2023-06-30 Sposób modyfikacji podłoża z monokrystalicznego SiC, zmodyfikowane podłoże, urządzenie zawierające takie podłoże i zastosowanie takiego urządzenia

Publications (1)

Publication Number Publication Date
PL445432A1 true PL445432A1 (pl) 2025-01-07

Family

ID=94174456

Family Applications (1)

Application Number Title Priority Date Filing Date
PL445432A PL445432A1 (pl) 2023-06-30 2023-06-30 Sposób modyfikacji podłoża z monokrystalicznego SiC, zmodyfikowane podłoże, urządzenie zawierające takie podłoże i zastosowanie takiego urządzenia

Country Status (1)

Country Link
PL (1) PL445432A1 (pl)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5318915A (en) * 1993-01-25 1994-06-07 North Carolina State University At Raleigh Method for forming a p-n junction in silicon carbide
EP1816672A1 (de) * 2006-02-02 2007-08-08 Siltronic AG Halbleiterschichtstruktur und Verfahren zur Herstellung einer Halbleiterschichtstruktur
US20140187020A1 (en) * 2012-12-28 2014-07-03 Sunedison, Inc. Method for low temperature layer transfer in the preparation of multilayer semicondutor devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5318915A (en) * 1993-01-25 1994-06-07 North Carolina State University At Raleigh Method for forming a p-n junction in silicon carbide
EP1816672A1 (de) * 2006-02-02 2007-08-08 Siltronic AG Halbleiterschichtstruktur und Verfahren zur Herstellung einer Halbleiterschichtstruktur
US20140187020A1 (en) * 2012-12-28 2014-07-03 Sunedison, Inc. Method for low temperature layer transfer in the preparation of multilayer semicondutor devices

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