DE112013005872B4 - Verfahren zum Messen des Verunreinigungsbetrags einer Gasphasenwachstumsvorrichtung und Verfahren zur Herstellung eines Epitaxiewafers - Google Patents

Verfahren zum Messen des Verunreinigungsbetrags einer Gasphasenwachstumsvorrichtung und Verfahren zur Herstellung eines Epitaxiewafers Download PDF

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DE112013005872B4
DE112013005872B4 DE112013005872.3T DE112013005872T DE112013005872B4 DE 112013005872 B4 DE112013005872 B4 DE 112013005872B4 DE 112013005872 T DE112013005872 T DE 112013005872T DE 112013005872 B4 DE112013005872 B4 DE 112013005872B4
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gas
phase growth
wafer
measuring
growth apparatus
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English (en)
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DE112013005872T5 (de
Inventor
Takeshi Arai
Satoshi Inada
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0095—Semiconductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02653—Vapour-liquid-solid growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Immunology (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Combustion & Propulsion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Chemical Vapour Deposition (AREA)
DE112013005872.3T 2012-10-16 2013-09-26 Verfahren zum Messen des Verunreinigungsbetrags einer Gasphasenwachstumsvorrichtung und Verfahren zur Herstellung eines Epitaxiewafers Active DE112013005872B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012229198A JP5884705B2 (ja) 2012-10-16 2012-10-16 気相成長装置の汚染量測定方法及びエピタキシャルウェーハの製造方法
JP2012-229198 2012-10-16
PCT/JP2013/076030 WO2014061413A1 (ja) 2012-10-16 2013-09-26 気相成長装置の汚染量測定方法及びエピタキシャルウェーハの製造方法

Publications (2)

Publication Number Publication Date
DE112013005872T5 DE112013005872T5 (de) 2015-08-20
DE112013005872B4 true DE112013005872B4 (de) 2022-06-30

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DE112013005872.3T Active DE112013005872B4 (de) 2012-10-16 2013-09-26 Verfahren zum Messen des Verunreinigungsbetrags einer Gasphasenwachstumsvorrichtung und Verfahren zur Herstellung eines Epitaxiewafers

Country Status (7)

Country Link
US (1) US9437505B2 (enExample)
JP (1) JP5884705B2 (enExample)
KR (1) KR101943074B1 (enExample)
CN (1) CN104620355B (enExample)
DE (1) DE112013005872B4 (enExample)
TW (1) TWI520246B (enExample)
WO (1) WO2014061413A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5741467B2 (ja) * 2012-02-07 2015-07-01 信越半導体株式会社 気相成長装置の清浄度評価方法
JP5783312B1 (ja) 2014-09-18 2015-09-24 株式会社Sumco エピタキシャルシリコンウェーハの製造方法及び気相成長装置
JP6327094B2 (ja) * 2014-10-02 2018-05-23 株式会社Sumco 気相成長装置の汚染管理方法、エピタキシャルシリコンウェーハの製造方法
JP6361482B2 (ja) * 2014-11-26 2018-07-25 株式会社Sumco 気相成長装置の汚染管理方法、エピタキシャルシリコンウェーハの製造方法
KR101701629B1 (ko) * 2015-07-28 2017-02-01 주식회사 엘지실트론 에피택셜 웨이퍼를 제조하기 위한 리액터의 재가동 준비 방법
CN107881491A (zh) * 2016-09-30 2018-04-06 非视觉污染分析科学技术有限公司 基板污染物分析装置及基板污染物分析方法
CN108426978B (zh) * 2017-02-14 2021-01-01 无锡华瑛微电子技术有限公司 晶圆局部处理方法
JP6739386B2 (ja) * 2017-03-28 2020-08-12 東京エレクトロン株式会社 基板処理システム、制御装置、成膜方法及びプログラム
JP6711327B2 (ja) 2017-07-18 2020-06-17 株式会社Sumco シリコンウェーハ製造工程の評価方法およびシリコンウェーハの製造方法
KR101988121B1 (ko) * 2017-08-23 2019-06-11 에스케이실트론 주식회사 실리콘웨이퍼의 금속불순물 검출방법
JP6477854B1 (ja) 2017-12-22 2019-03-06 株式会社Sumco 気相成長装置の汚染管理方法及びエピタキシャルウェーハの製造方法
US10695804B2 (en) * 2018-01-25 2020-06-30 Applied Materials, Inc. Equipment cleaning apparatus and method
JP7342695B2 (ja) * 2019-12-26 2023-09-12 株式会社Sumco エピタキシャルウェーハ製造システム及び製造方法
CN112683988B (zh) * 2020-12-28 2023-06-02 上海新昇半导体科技有限公司 一种晶圆中金属杂质的检测方法
CN113782465B (zh) * 2021-11-11 2022-02-18 西安奕斯伟材料科技有限公司 用于检测晶圆表面金属的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69906475T2 (de) 1998-01-09 2004-03-18 Asm America Inc., Phoenix In situ wachstum von oxid und silizium schichten
US20050136657A1 (en) 2002-07-12 2005-06-23 Tokyo Electron Limited Film-formation method for semiconductor process
JP2010040813A (ja) 2008-08-06 2010-02-18 Shin Etsu Handotai Co Ltd シリコン基板の評価方法、汚染検出方法及びエピタキシャル基板の製造方法
US20120077290A1 (en) 2010-09-27 2012-03-29 Sumco Corporation Method of etching surface layer portion of silicon wafer and method of analyzing metal contamination of silicon wafer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2863563B2 (ja) * 1989-09-14 1999-03-03 信越半導体株式会社 化合物半導体基板表面の重金属汚染評価方法
JP3285723B2 (ja) * 1994-11-17 2002-05-27 信越半導体株式会社 半導体熱処理用治具及びその表面処理方法
US6749687B1 (en) * 1998-01-09 2004-06-15 Asm America, Inc. In situ growth of oxide and silicon layers
JP4393071B2 (ja) * 2002-07-12 2010-01-06 東京エレクトロン株式会社 成膜方法
JP2006228782A (ja) * 2005-02-15 2006-08-31 Sumco Corp 枚葉式エピタキシャルウェーハ製造装置およびその保守方法
JP5407212B2 (ja) * 2008-08-06 2014-02-05 株式会社Ｓｕｍｃｏ 熱処理炉評価方法および半導体ウェーハの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69906475T2 (de) 1998-01-09 2004-03-18 Asm America Inc., Phoenix In situ wachstum von oxid und silizium schichten
US20050136657A1 (en) 2002-07-12 2005-06-23 Tokyo Electron Limited Film-formation method for semiconductor process
JP2010040813A (ja) 2008-08-06 2010-02-18 Shin Etsu Handotai Co Ltd シリコン基板の評価方法、汚染検出方法及びエピタキシャル基板の製造方法
US20120077290A1 (en) 2010-09-27 2012-03-29 Sumco Corporation Method of etching surface layer portion of silicon wafer and method of analyzing metal contamination of silicon wafer

Also Published As

Publication number Publication date
DE112013005872T5 (de) 2015-08-20
TW201421595A (zh) 2014-06-01
JP2014082324A (ja) 2014-05-08
TWI520246B (zh) 2016-02-01
JP5884705B2 (ja) 2016-03-15
KR20150066515A (ko) 2015-06-16
KR101943074B1 (ko) 2019-01-28
CN104620355A (zh) 2015-05-13
WO2014061413A1 (ja) 2014-04-24
US9437505B2 (en) 2016-09-06
CN104620355B (zh) 2017-03-15
US20150243566A1 (en) 2015-08-27

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