DE112012004350T5 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE112012004350T5
DE112012004350T5 DE112012004350.2T DE112012004350T DE112012004350T5 DE 112012004350 T5 DE112012004350 T5 DE 112012004350T5 DE 112012004350 T DE112012004350 T DE 112012004350T DE 112012004350 T5 DE112012004350 T5 DE 112012004350T5
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Germany
Prior art keywords
circuit
transistor
line
capacitor
switch
Prior art date
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Pending
Application number
DE112012004350.2T
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German (de)
English (en)
Inventor
Hajime Kimura
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Filing date
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE112012004350T5 publication Critical patent/DE112012004350T5/de
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0852—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory with more than one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0262—The addressing of the pixel, in a display other than an active matrix LCD, involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependent on signals of two data electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0233—Improving the luminance or brightness uniformity across the screen
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275—Details of drivers for data electrodes
    • G09G3/3291—Details of drivers for data electrodes in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of El Displays (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Devices (AREA)
  • Electronic Switches (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
  • Surgical Instruments (AREA)
  • Led Device Packages (AREA)
DE112012004350.2T 2011-10-18 2012-10-05 Halbleitervorrichtung Pending DE112012004350T5 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011228418 2011-10-18
JPJP2011228418 2011-10-18
JP2011261317 2011-11-30
JPJP2011261317 2011-11-30
PCT/JP2012/076561 WO2013058199A1 (en) 2011-10-18 2012-10-05 Semiconductor device

Publications (1)

Publication Number Publication Date
DE112012004350T5 true DE112012004350T5 (de) 2014-07-17

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ID=48085389

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112012004350.2T Pending DE112012004350T5 (de) 2011-10-18 2012-10-05 Halbleitervorrichtung

Country Status (6)

Country Link
US (5) US9280931B2 (enExample)
JP (10) JP6058346B2 (enExample)
KR (7) KR101962097B1 (enExample)
DE (1) DE112012004350T5 (enExample)
TW (7) TWI699745B (enExample)
WO (1) WO2013058199A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10043794B2 (en) 2012-03-22 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6031883B2 (ja) * 2012-08-08 2016-11-24 富士通株式会社 半導体集積回路及び電源回路
TW201426709A (zh) * 2012-12-26 2014-07-01 Sony Corp 顯示裝置、顯示裝置之驅動方法及電子機器
WO2014154474A1 (de) * 2013-03-26 2014-10-02 Siemens Vai Metals Technologies Gmbh Elektronikschutzgehäuse zur aufnahme einer elektronik
JP6426402B2 (ja) * 2013-08-30 2018-11-21 株式会社半導体エネルギー研究所 表示装置
US9552767B2 (en) 2013-08-30 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP6495602B2 (ja) 2013-09-13 2019-04-03 株式会社半導体エネルギー研究所 発光装置
US9806098B2 (en) * 2013-12-10 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
DE112014006046T5 (de) * 2013-12-27 2016-09-15 Semiconductor Energy Laboratory Co., Ltd. Licht emittierende Vorrichtung
US9704893B2 (en) 2015-08-07 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP7291631B2 (ja) * 2017-12-21 2023-06-15 株式会社半導体エネルギー研究所 表示装置
US11264512B2 (en) * 2018-06-29 2022-03-01 Intel Corporation Thin film transistors having U-shaped features
CN112639937B (zh) * 2018-09-05 2023-06-23 株式会社半导体能源研究所 显示装置、显示模块、电子设备及显示装置的制造方法
KR102768423B1 (ko) 2018-09-07 2025-02-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 모듈, 및 전자 기기
US11392004B2 (en) * 2018-12-06 2022-07-19 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the display device
KR20220006541A (ko) * 2019-05-10 2022-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
CN110223639B (zh) * 2019-06-17 2021-01-29 京东方科技集团股份有限公司 像素电路、像素驱动方法、显示基板和显示装置
US11710760B2 (en) * 2019-06-21 2023-07-25 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and manufacturing method of display device
KR20250167135A (ko) * 2019-10-11 2025-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
KR20220104165A (ko) 2019-11-21 2022-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 모듈, 전자 기기, 및 표시 장치의 제작 방법
US11636809B2 (en) 2019-11-29 2023-04-25 Chengdu Boe Optoelectronics Technology Co., Ltd. Display substrate and display device
CN113327947B (zh) 2019-11-29 2024-11-12 京东方科技集团股份有限公司 显示基板以及显示装置
WO2021189491A1 (zh) * 2020-03-27 2021-09-30 京东方科技集团股份有限公司 显示模组及显示装置
KR20230002999A (ko) 2020-05-01 2023-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 모듈, 및 전자 기기
KR20230050317A (ko) 2020-08-12 2023-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 그 동작 방법, 및 전자 기기
KR102864913B1 (ko) 2021-05-27 2025-09-26 주식회사 엘지에너지솔루션 파우치 주름을 개선한 파우치 성형 장치
KR102740676B1 (ko) * 2021-09-30 2024-12-11 엘지디스플레이 주식회사 픽셀 회로와 이를 포함한 표시장치
US12482415B2 (en) 2021-12-22 2025-11-25 Semiconductor Energy Laboratory Co., Ltd. Display apparatus and electronic device
KR20250095869A (ko) 2023-12-20 2025-06-27 엘지디스플레이 주식회사 화소, 화소의 구동 방법 및 화소를 포함하는 표시 장치

Family Cites Families (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3298974B2 (ja) 1993-03-23 2002-07-08 電子科学株式会社 昇温脱離ガス分析装置
JP2002351401A (ja) * 2001-03-21 2002-12-06 Mitsubishi Electric Corp 自発光型表示装置
CN100371962C (zh) 2001-08-29 2008-02-27 株式会社半导体能源研究所 发光器件、发光器件驱动方法、以及电子设备
SG120075A1 (en) 2001-09-21 2006-03-28 Semiconductor Energy Lab Semiconductor device
US7456810B2 (en) 2001-10-26 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and driving method thereof
JP4498669B2 (ja) 2001-10-30 2010-07-07 株式会社半導体エネルギー研究所 半導体装置、表示装置、及びそれらを具備する電子機器
KR100940342B1 (ko) 2001-11-13 2010-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 그 구동방법
JP2003195810A (ja) 2001-12-28 2003-07-09 Casio Comput Co Ltd 駆動回路、駆動装置及び光学要素の駆動方法
EP2348502B1 (en) 2002-01-24 2013-04-03 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device and method of driving the semiconductor device
WO2004061812A1 (ja) 2002-12-27 2004-07-22 Semiconductor Energy Laboratory Co., Ltd. 半導体装置およびそれを用いた表示装置
EP1590787A1 (en) 2003-01-24 2005-11-02 Koninklijke Philips Electronics N.V. Active matrix display devices
GB0301659D0 (en) * 2003-01-24 2003-02-26 Koninkl Philips Electronics Nv Electroluminescent display devices
GB0301623D0 (en) * 2003-01-24 2003-02-26 Koninkl Philips Electronics Nv Electroluminescent display devices
JP3901105B2 (ja) * 2003-02-14 2007-04-04 ソニー株式会社 画素回路、表示装置、および画素回路の駆動方法
WO2004077671A1 (ja) 2003-02-28 2004-09-10 Semiconductor Energy Laboratory Co., Ltd. 半導体装置およびその駆動方法
KR100497247B1 (ko) 2003-04-01 2005-06-23 삼성에스디아이 주식회사 발광 표시 장치 및 그 표시 패널과 구동 방법
WO2004097543A1 (ja) 2003-04-25 2004-11-11 Semiconductor Energy Laboratory Co. Ltd. 半導体装置
KR100913303B1 (ko) 2003-05-06 2009-08-26 삼성전자주식회사 액정표시장치
US20070151144A1 (en) 2003-05-06 2007-07-05 Samsung Electronics Co., Ltd. Detergent comprising the reaction product an amino alcohol, a high molecular weight hydroxy aromatic compound, and an aldehydye
JP4884671B2 (ja) 2003-05-14 2012-02-29 株式会社半導体エネルギー研究所 半導体装置
JP4484451B2 (ja) * 2003-05-16 2010-06-16 奇美電子股▲ふん▼有限公司 画像表示装置
JP3772889B2 (ja) * 2003-05-19 2006-05-10 セイコーエプソン株式会社 電気光学装置およびその駆動装置
JP4488709B2 (ja) * 2003-09-29 2010-06-23 三洋電機株式会社 有機ｅｌパネル
JP4632655B2 (ja) * 2003-11-07 2011-02-16 日本電気株式会社 発光表示装置
JP4588312B2 (ja) * 2003-12-02 2010-12-01 株式会社半導体エネルギー研究所 発光装置の作製方法
JP4826870B2 (ja) * 2003-12-02 2011-11-30 ソニー株式会社 画素回路及びその駆動方法とアクティブマトリクス装置並びに表示装置
US7446742B2 (en) 2004-01-30 2008-11-04 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
KR100560479B1 (ko) * 2004-03-10 2006-03-13 삼성에스디아이 주식회사 발광 표시 장치 및 그 표시 패널과 구동 방법
EP1610292B1 (en) 2004-06-25 2016-06-15 Semiconductor Energy Laboratory Co., Ltd. Display device, driving method thereof and electronic device
JP4645881B2 (ja) * 2004-07-08 2011-03-09 ソニー株式会社 画素回路及、アクティブマトリクス装置及び表示装置
JP4160032B2 (ja) * 2004-09-01 2008-10-01 シャープ株式会社 表示装置およびその駆動方法
KR100673760B1 (ko) * 2004-09-08 2007-01-24 삼성에스디아이 주식회사 발광 표시장치
JP5017773B2 (ja) * 2004-09-17 2012-09-05 ソニー株式会社 画素回路及び表示装置とこれらの駆動方法
KR100699999B1 (ko) 2004-10-18 2007-03-26 삼성에스디아이 주식회사 유기 전계 발광 표시장치
KR100601375B1 (ko) 2004-10-19 2006-07-13 삼성에스디아이 주식회사 유기 전계 발광 표시장치
KR20060054603A (ko) 2004-11-15 2006-05-23 삼성전자주식회사 표시 장치 및 그 구동 방법
KR101239162B1 (ko) * 2004-11-30 2013-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치와 그 구동방법, 반도체장치, 및 전자기기
KR101152120B1 (ko) 2005-03-16 2012-06-15 삼성전자주식회사 표시 장치 및 그 구동 방법
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
JP4752315B2 (ja) 2005-04-19 2011-08-17 セイコーエプソン株式会社 電子回路、その駆動方法、電気光学装置および電子機器
JP2006317696A (ja) * 2005-05-12 2006-11-24 Sony Corp 画素回路および表示装置、並びに画素回路の制御方法
TWI429327B (zh) 2005-06-30 2014-03-01 Semiconductor Energy Lab 半導體裝置、顯示裝置、及電子設備
TWI424408B (zh) 2005-08-12 2014-01-21 半導體能源研究所股份有限公司 半導體裝置，和安裝有該半導體裝置的顯示裝置和電子裝置
KR100635509B1 (ko) 2005-08-16 2006-10-17 삼성에스디아이 주식회사 유기 전계발광 표시장치
CA2518276A1 (en) * 2005-09-13 2007-03-13 Ignis Innovation Inc. Compensation technique for luminance degradation in electro-luminance devices
JP4753373B2 (ja) 2005-09-16 2011-08-24 株式会社半導体エネルギー研究所 表示装置及び表示装置の駆動方法
WO2007042957A2 (en) 2005-10-12 2007-04-19 Koninklijke Philips Electronics N.V. Transistor control circuits and control methods, and active matrix display devices using the same
JP5656321B2 (ja) 2005-10-18 2015-01-21 株式会社半導体エネルギー研究所 半導体装置、表示装置、表示モジュール及び電子機器
KR101324756B1 (ko) * 2005-10-18 2013-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 그의 구동방법
US7692610B2 (en) 2005-11-30 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5478000B2 (ja) * 2005-11-30 2014-04-23 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
EP1793367A3 (en) 2005-12-02 2009-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101433680B1 (ko) 2005-12-02 2014-08-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 디스플레이 장치, 및 전자 장치
EP1793366A3 (en) 2005-12-02 2009-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
TWI272570B (en) * 2005-12-08 2007-02-01 Chi Mei El Corp Organic light emitting display and pixel with voltage compensation technique thereof
JP2007233270A (ja) 2006-03-03 2007-09-13 Sanyo Electric Co Ltd 有機ｅｌ表示パネル
TWI338874B (en) * 2006-03-10 2011-03-11 Au Optronics Corp Light emitting diode display and driving pixel method thereof
TWI603307B (zh) 2006-04-05 2017-10-21 半導體能源研究所股份有限公司 半導體裝置，顯示裝置，和電子裝置
TWI321773B (en) * 2006-04-21 2010-03-11 Au Optronics Corp A circuit and method for driving an organic electro-luminescent diode
JP4882536B2 (ja) 2006-06-19 2012-02-22 セイコーエプソン株式会社 電子回路及び電子機器
JP2008107785A (ja) * 2006-09-29 2008-05-08 Seiko Epson Corp 電気光学装置および電子機器
TWI442368B (zh) * 2006-10-26 2014-06-21 Semiconductor Energy Lab 電子裝置，顯示裝置，和半導體裝置，以及其驅動方法
JP2008134625A (ja) * 2006-10-26 2008-06-12 Semiconductor Energy Lab Co Ltd 半導体装置、表示装置及び電子機器
JP4300491B2 (ja) * 2007-03-13 2009-07-22 ソニー株式会社 ディスプレイ装置
JP5261956B2 (ja) * 2007-03-29 2013-08-14 富士電機株式会社 双方向シフトレジスタ
JP2008286905A (ja) 2007-05-16 2008-11-27 Sony Corp 表示装置、表示装置の駆動方法および電子機器
JP5124250B2 (ja) * 2007-11-30 2013-01-23 エルジー ディスプレイ カンパニー リミテッド 画像表示装置
WO2009090969A1 (en) * 2008-01-15 2009-07-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9047815B2 (en) 2009-02-27 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
JP5736114B2 (ja) * 2009-02-27 2015-06-17 株式会社半導体エネルギー研究所 半導体装置の駆動方法、電子機器の駆動方法
TWI410928B (zh) * 2009-09-18 2013-10-01 Univ Nat Taiwan Science Tech 畫素結構、顯示面板及其驅動方法
JP5508301B2 (ja) 2011-01-18 2014-05-28 パナソニック株式会社 発光表示装置
JP5178861B2 (ja) * 2011-03-01 2013-04-10 株式会社半導体エネルギー研究所 表示装置
JP5982147B2 (ja) 2011-04-01 2016-08-31 株式会社半導体エネルギー研究所 発光装置
US8922464B2 (en) 2011-05-11 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device and driving method thereof
US8878589B2 (en) 2011-06-30 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR102297329B1 (ko) 2011-07-22 2021-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US8710505B2 (en) 2011-08-05 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6050054B2 (ja) 2011-09-09 2016-12-21 株式会社半導体エネルギー研究所 半導体装置

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