DE112010001476T8 - Verfahren zur Herstellung eines Siliciumcarbidhalbleiterbauteils - Google Patents

Verfahren zur Herstellung eines Siliciumcarbidhalbleiterbauteils Download PDF

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Publication number
DE112010001476T8
DE112010001476T8 DE112010001476T DE112010001476T DE112010001476T8 DE 112010001476 T8 DE112010001476 T8 DE 112010001476T8 DE 112010001476 T DE112010001476 T DE 112010001476T DE 112010001476 T DE112010001476 T DE 112010001476T DE 112010001476 T8 DE112010001476 T8 DE 112010001476T8
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DE
Germany
Prior art keywords
producing
semiconductor device
silicon carbide
carbide semiconductor
silicon
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Application number
DE112010001476T
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English (en)
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DE112010001476B4 (de
DE112010001476T5 (de
Inventor
Masayuki Furuhashi
Masayuki Imaizumi
Toshikazu Tanioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of DE112010001476T5 publication Critical patent/DE112010001476T5/de
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Publication of DE112010001476B4 publication Critical patent/DE112010001476B4/de
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE112010001476.0T 2009-03-11 2010-03-10 Verfahren zur Herstellung eines Siliciumcarbidhalbleiterbauteils Active DE112010001476B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009057951 2009-03-11
JP2009-057951 2009-03-11
PCT/JP2010/001690 WO2010103820A1 (ja) 2009-03-11 2010-03-10 炭化珪素半導体装置の製造方法

Publications (3)

Publication Number Publication Date
DE112010001476T5 DE112010001476T5 (de) 2012-09-20
DE112010001476T8 true DE112010001476T8 (de) 2012-11-22
DE112010001476B4 DE112010001476B4 (de) 2017-11-30

Family

ID=42728116

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112010001476.0T Active DE112010001476B4 (de) 2009-03-11 2010-03-10 Verfahren zur Herstellung eines Siliciumcarbidhalbleiterbauteils

Country Status (4)

Country Link
US (1) US8753951B2 (de)
JP (4) JP4911263B2 (de)
DE (1) DE112010001476B4 (de)
WO (1) WO2010103820A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012038919A (ja) * 2010-08-06 2012-02-23 Mitsubishi Electric Corp 炭化珪素半導体装置の製造方法
JP5687220B2 (ja) * 2012-01-20 2015-03-18 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP5811969B2 (ja) 2012-08-27 2015-11-11 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US9209262B2 (en) 2012-12-27 2015-12-08 Panasonic Intellectual Property Management Co., Ltd. Silicon carbide semiconductor device and method for manufacturing same
JP2014207403A (ja) * 2013-04-16 2014-10-30 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US9570570B2 (en) * 2013-07-17 2017-02-14 Cree, Inc. Enhanced gate dielectric for a field effect device with a trenched gate
JP6300262B2 (ja) 2013-09-18 2018-03-28 株式会社東芝 半導体装置及びその製造方法
JP5878187B2 (ja) * 2014-02-17 2016-03-08 東京エレクトロン株式会社 トランジスタの製造方法
JP2016115860A (ja) 2014-12-17 2016-06-23 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP6649208B2 (ja) * 2016-08-29 2020-02-19 株式会社東芝 半導体装置
JP6805074B2 (ja) * 2017-05-12 2020-12-23 株式会社東芝 半導体装置の製造方法
JP6785202B2 (ja) * 2017-09-11 2020-11-18 株式会社豊田中央研究所 炭化珪素半導体装置
JP2019121676A (ja) * 2018-01-04 2019-07-22 株式会社豊田中央研究所 半導体装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1022290A (ja) * 1996-06-28 1998-01-23 F T L:Kk 半導体装置の製造方法及び半導体装置の製造装置
JPH10135143A (ja) * 1996-10-28 1998-05-22 Sharp Corp 熱処理炉
US7067176B2 (en) * 2000-10-03 2006-06-27 Cree, Inc. Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
US6596547B2 (en) * 2001-12-21 2003-07-22 Texas Instruments Incorporated Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
JP2003243653A (ja) * 2002-02-19 2003-08-29 Nissan Motor Co Ltd 炭化珪素半導体装置の製造方法
JP3950959B2 (ja) * 2002-06-28 2007-08-01 独立行政法人産業技術総合研究所 半導体装置の製造方法
US7022378B2 (en) * 2002-08-30 2006-04-04 Cree, Inc. Nitrogen passivation of interface states in SiO2/SiC structures
JP2004303877A (ja) * 2003-03-31 2004-10-28 Sanken Electric Co Ltd 半導体素子の製造方法
JP4164575B2 (ja) * 2003-10-02 2008-10-15 独立行政法人産業技術総合研究所 半導体装置の製造方法
JP2005136386A (ja) 2003-10-09 2005-05-26 Matsushita Electric Ind Co Ltd 炭化珪素−酸化物積層体，その製造方法及び半導体装置
JP4016928B2 (ja) * 2003-10-09 2007-12-05 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP2005166930A (ja) * 2003-12-02 2005-06-23 Matsushita Electric Ind Co Ltd ＳｉＣ−ＭＩＳＦＥＴ及びその製造方法
JP4549167B2 (ja) * 2004-11-25 2010-09-22 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP2006210818A (ja) 2005-01-31 2006-08-10 Matsushita Electric Ind Co Ltd 半導体素子およびその製造方法
JP2006216918A (ja) * 2005-02-07 2006-08-17 Kyoto Univ 半導体素子の製造方法
US8119032B2 (en) * 2006-02-07 2012-02-21 President And Fellows Of Harvard College Gas-phase functionalization of surfaces including carbon-based surfaces

Also Published As

Publication number Publication date
US8753951B2 (en) 2014-06-17
DE112010001476B4 (de) 2017-11-30
JP2012039127A (ja) 2012-02-23
WO2010103820A1 (ja) 2010-09-16
JP5617802B2 (ja) 2014-11-05
JP2014241445A (ja) 2014-12-25
DE112010001476T5 (de) 2012-09-20
JPWO2010103820A1 (ja) 2012-09-13
JP2016219832A (ja) 2016-12-22
JP4911263B2 (ja) 2012-04-04
US20120009801A1 (en) 2012-01-12
JP6226840B2 (ja) 2017-11-08
JP6332357B2 (ja) 2018-05-30

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