DE102009028762A8 - Verfahren zum Ätzen von Siliziumoberflächen - Google Patents

Verfahren zum Ätzen von Siliziumoberflächen Download PDF

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Publication number
DE102009028762A8
DE102009028762A8 DE102009028762A DE102009028762A DE102009028762A8 DE 102009028762 A8 DE102009028762 A8 DE 102009028762A8 DE 102009028762 A DE102009028762 A DE 102009028762A DE 102009028762 A DE102009028762 A DE 102009028762A DE 102009028762 A8 DE102009028762 A8 DE 102009028762A8
Authority
DE
Germany
Prior art keywords
etching silicon
silicon surfaces
etching
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102009028762A
Other languages
English (en)
Other versions
DE102009028762A1 (de
Inventor
Ahmed Abdelbar Dr. El Jaouhari
Jürgen Schweckendiek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rena GmbH
Original Assignee
Rena GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rena GmbH filed Critical Rena GmbH
Priority to DE102009028762A priority Critical patent/DE102009028762A1/de
Priority to US13/390,081 priority patent/US20120208370A1/en
Priority to CN2010800356641A priority patent/CN102484060A/zh
Priority to JP2012525097A priority patent/JP2013502706A/ja
Priority to EP10720942.1A priority patent/EP2467873B1/de
Priority to KR1020127003304A priority patent/KR101404217B1/ko
Priority to PCT/EP2010/057737 priority patent/WO2011020632A1/en
Priority to TW099117944A priority patent/TW201108321A/zh
Publication of DE102009028762A1 publication Critical patent/DE102009028762A1/de
Publication of DE102009028762A8 publication Critical patent/DE102009028762A8/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
DE102009028762A 2009-08-20 2009-08-20 Verfahren zum Ätzen von Siliziumoberflächen Ceased DE102009028762A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102009028762A DE102009028762A1 (de) 2009-08-20 2009-08-20 Verfahren zum Ätzen von Siliziumoberflächen
US13/390,081 US20120208370A1 (en) 2009-08-20 2010-06-02 Method for etching of silicon surfaces
CN2010800356641A CN102484060A (zh) 2009-08-20 2010-06-02 用于硅表面蚀刻的方法
JP2012525097A JP2013502706A (ja) 2009-08-20 2010-06-02 シリコン表面のエッチング方法
EP10720942.1A EP2467873B1 (de) 2009-08-20 2010-06-02 Ätzverfahren für silikonflächen
KR1020127003304A KR101404217B1 (ko) 2009-08-20 2010-06-02 실리콘 표면 에칭 방법
PCT/EP2010/057737 WO2011020632A1 (en) 2009-08-20 2010-06-02 Method for etching of silicon surfaces
TW099117944A TW201108321A (en) 2009-08-20 2010-06-03 Method for etching of silicon surfaces

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009028762A DE102009028762A1 (de) 2009-08-20 2009-08-20 Verfahren zum Ätzen von Siliziumoberflächen

Publications (2)

Publication Number Publication Date
DE102009028762A1 DE102009028762A1 (de) 2011-03-03
DE102009028762A8 true DE102009028762A8 (de) 2011-06-01

Family

ID=43086967

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009028762A Ceased DE102009028762A1 (de) 2009-08-20 2009-08-20 Verfahren zum Ätzen von Siliziumoberflächen

Country Status (8)

Country Link
US (1) US20120208370A1 (de)
EP (1) EP2467873B1 (de)
JP (1) JP2013502706A (de)
KR (1) KR101404217B1 (de)
CN (1) CN102484060A (de)
DE (1) DE102009028762A1 (de)
TW (1) TW201108321A (de)
WO (1) WO2011020632A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120112321A1 (en) * 2010-11-04 2012-05-10 Solarworld Industries America, Inc. Alkaline etching liquid for texturing a silicon wafer surface
TWI419958B (zh) * 2010-09-10 2013-12-21 Jou Wei Tseng 矽基材之蝕刻液及蝕刻方法
KR20120136881A (ko) * 2011-06-10 2012-12-20 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
KR20120136882A (ko) * 2011-06-10 2012-12-20 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
WO2013002502A2 (ko) * 2011-06-28 2013-01-03 동우화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
CN102719132B (zh) * 2012-06-07 2015-06-24 彭朝兵 导电聚合物蚀刻油墨及制备方法
CN102751384A (zh) * 2012-07-07 2012-10-24 蚌埠玻璃工业设计研究院 一种晶体硅表面织构方法
CN104584232B (zh) * 2012-08-10 2017-03-08 第一工业制药株式会社 纹理形成用蚀刻液及使用其的纹理形成方法
CN103980905B (zh) * 2014-05-07 2017-04-05 佛山市中山大学研究院 一种用于氧化物材料体系的蚀刻液及其蚀刻方法和应用
KR102618423B1 (ko) * 2016-08-19 2023-12-27 오씨아이 주식회사 실리콘 텍스쳐링 조성물 및 이의 제조방법
CN108242477B (zh) * 2016-12-27 2020-03-24 中国科学院上海高等研究院 层转移单晶硅薄膜用籽晶衬底的微接触湿法刻蚀制备方法
CN107338480A (zh) * 2017-08-24 2017-11-10 嘉兴尚能光伏材料科技有限公司 一种单晶硅硅片制绒方法及其制绒添加剂
CN113502163B (zh) * 2021-09-10 2021-12-03 杭州晶宝新能源科技有限公司 用于形成太阳电池背结构的化学助剂、其制备方法及应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019605A (ja) * 2003-06-25 2005-01-20 Naoetsu Electronics Co Ltd テクスチャー形成用エッチング液
DE102006022093A1 (de) * 2006-05-11 2007-11-22 Siltronic Ag Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe durch Ätzen
DE102007026081A1 (de) * 2007-05-25 2008-11-27 Gebr. Schmid Gmbh & Co. Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
DE19811878C2 (de) 1998-03-18 2002-09-19 Siemens Solar Gmbh Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen
US6685757B2 (en) * 2002-02-21 2004-02-03 Rodel Holdings, Inc. Polishing composition
EP1378947A1 (de) * 2002-07-01 2004-01-07 Interuniversitair Microelektronica Centrum Vzw Ätzpaste für Halbleiter und Verwendung einer Ätzpaste zum lokalisierten Ätzen von Halbleitersubstraten
DE10241300A1 (de) * 2002-09-04 2004-03-18 Merck Patent Gmbh Ätzpasten für Siliziumoberflächen und -schichten
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
JP4668528B2 (ja) * 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
JP4644434B2 (ja) * 2004-03-24 2011-03-02 株式会社フジミインコーポレーテッド 研磨用組成物
CN101356628B (zh) * 2005-08-05 2012-01-04 高级技术材料公司 用于对金属膜进行平坦化的高通量化学机械抛光组合物
DE102006051952A1 (de) * 2006-11-01 2008-05-08 Merck Patent Gmbh Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten
JP5575771B2 (ja) * 2008-09-01 2014-08-20 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング エッチングによる薄層ソーラーモジュールの端部除去
US20110244184A1 (en) * 2010-04-01 2011-10-06 Solarworld Industries America, Inc. Alkaline etching solution for texturing a silicon wafer surface
US20120112321A1 (en) * 2010-11-04 2012-05-10 Solarworld Industries America, Inc. Alkaline etching liquid for texturing a silicon wafer surface
US20120295447A1 (en) * 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019605A (ja) * 2003-06-25 2005-01-20 Naoetsu Electronics Co Ltd テクスチャー形成用エッチング液
DE102006022093A1 (de) * 2006-05-11 2007-11-22 Siltronic Ag Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe durch Ätzen
DE102007026081A1 (de) * 2007-05-25 2008-11-27 Gebr. Schmid Gmbh & Co. Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer

Non-Patent Citations (2)

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Title
Computerübersetzung der Ansprüche und der Beschreibung & JP 2005019605 A *
JP 2005-019605 AA und Computerübersetzung der Ansprüche und der Beschreibung

Also Published As

Publication number Publication date
CN102484060A (zh) 2012-05-30
EP2467873A1 (de) 2012-06-27
US20120208370A1 (en) 2012-08-16
KR101404217B1 (ko) 2014-06-05
KR20120041750A (ko) 2012-05-02
TW201108321A (en) 2011-03-01
WO2011020632A1 (en) 2011-02-24
JP2013502706A (ja) 2013-01-24
DE102009028762A1 (de) 2011-03-03
EP2467873B1 (de) 2014-01-15

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8196 Reprint of faulty title page (publication) german patentblatt: part 1a6
OP8 Request for examination as to paragraph 44 patent law
R082 Change of representative
R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final
R003 Refusal decision now final

Effective date: 20150127