JP4164575B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4164575B2 JP4164575B2 JP2003344345A JP2003344345A JP4164575B2 JP 4164575 B2 JP4164575 B2 JP 4164575B2 JP 2003344345 A JP2003344345 A JP 2003344345A JP 2003344345 A JP2003344345 A JP 2003344345A JP 4164575 B2 JP4164575 B2 JP 4164575B2
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- Prior art keywords
- heat treatment
- insulating film
- gas
- semiconductor device
- interface
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- 239000004065 semiconductor Substances 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 112
- 238000010438 heat treatment Methods 0.000 claims description 57
- 239000007789 gas Substances 0.000 claims description 46
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 28
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 239000011261 inert gas Substances 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000007547 defect Effects 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 230000003647 oxidation Effects 0.000 description 15
- 238000007254 oxidation reaction Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000001816 cooling Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001784 detoxification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- -1 oxygen forms carbon clusters Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Formation Of Insulating Films (AREA)
Description
G.Y.Chung et al.,Appl.Phys.Lett.76,1713(2000)
10 熱処理炉
11 反応管
12 赤外線ランプ
13 サセプタ
14 試料
20 ガス供給部
21,22,23 マスフローコントローラー
24 マニホールド
30 ガス排出部
31 NOガス除害装置
32 真空排気系
4 紫外線照射ユニット
4a 反射面
Claims (2)
- 絶縁膜の形成工程を含む半導体装置の製造方法において、
当該半導体装置の製造は、反応管内に配置した炭化珪素からなるサセプタと、そのサセプタ上に載置された最上層が炭化珪素層である半導体基板とを光照射により加熱するコールドウォール型の熱処理炉を用いて行われ、
上記光照射は、波長が200nmから遠赤外線領域までの光の照射であり、
上記絶縁膜は上記半導体基板上に形成され、
上記絶縁膜形成の一工程として、不活性ガスにより希釈された0.5%以上20%以下の一酸化窒素ガスを含む、不活性ガスと一酸化窒素ガスの混合ガス雰囲気中での熱処理を含み、
上記熱処理は絶縁膜の全体の形成後に一括して行われ、
上記熱処理の温度は少なくとも1200℃以上であり、
上記熱処理の後、50℃/min以上の降温速度で冷却する、
ことを特徴とする半導体装置の製造方法。 - 上記不活性ガスがAr(アルゴン)である、請求項1に記載の半導体装置の製造方法。
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JP2003344345A JP4164575B2 (ja) | 2003-10-02 | 2003-10-02 | 半導体装置の製造方法 |
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JP2003344345A JP4164575B2 (ja) | 2003-10-02 | 2003-10-02 | 半導体装置の製造方法 |
Related Child Applications (1)
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JP2008150303A Division JP4997605B2 (ja) | 2008-06-09 | 2008-06-09 | コールドウォール型熱処理炉および絶縁膜形成装置 |
Publications (2)
Publication Number | Publication Date |
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JP2005109396A JP2005109396A (ja) | 2005-04-21 |
JP4164575B2 true JP4164575B2 (ja) | 2008-10-15 |
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JP2003344345A Expired - Lifetime JP4164575B2 (ja) | 2003-10-02 | 2003-10-02 | 半導体装置の製造方法 |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007001281A1 (en) * | 2005-06-22 | 2007-01-04 | Axcelis Technologies, Inc. | Apparatus and process for treating dielectric materials |
US7727904B2 (en) | 2005-09-16 | 2010-06-01 | Cree, Inc. | Methods of forming SiC MOSFETs with high inversion layer mobility |
DE112010001476B4 (de) | 2009-03-11 | 2017-11-30 | Mitsubishi Electric Corporation | Verfahren zur Herstellung eines Siliciumcarbidhalbleiterbauteils |
JP5197474B2 (ja) * | 2009-04-17 | 2013-05-15 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP5687220B2 (ja) * | 2012-01-20 | 2015-03-18 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP5811969B2 (ja) | 2012-08-27 | 2015-11-11 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP6232680B2 (ja) * | 2013-09-06 | 2017-11-22 | 大陽日酸株式会社 | サセプタのクリーニング方法 |
JP2016115860A (ja) * | 2014-12-17 | 2016-06-23 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
KR102487935B1 (ko) * | 2018-06-08 | 2023-01-13 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 성막 장치 |
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