DE112008003535T5 - Suszeptor für das epitaxiale Wachstum - Google Patents
Suszeptor für das epitaxiale Wachstum Download PDFInfo
- Publication number
- DE112008003535T5 DE112008003535T5 DE112008003535T DE112008003535T DE112008003535T5 DE 112008003535 T5 DE112008003535 T5 DE 112008003535T5 DE 112008003535 T DE112008003535 T DE 112008003535T DE 112008003535 T DE112008003535 T DE 112008003535T DE 112008003535 T5 DE112008003535 T5 DE 112008003535T5
- Authority
- DE
- Germany
- Prior art keywords
- single crystal
- crystal substrate
- susceptor
- zone
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-340749 | 2007-12-28 | ||
JP2007340749 | 2007-12-28 | ||
PCT/JP2008/003621 WO2009084154A1 (ja) | 2007-12-28 | 2008-12-05 | エピタキシャル成長用サセプタ |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112008003535T5 true DE112008003535T5 (de) | 2010-12-09 |
Family
ID=40823890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112008003535T Ceased DE112008003535T5 (de) | 2007-12-28 | 2008-12-05 | Suszeptor für das epitaxiale Wachstum |
Country Status (6)
Country | Link |
---|---|
US (1) | US20110073037A1 (ja) |
JP (1) | JP4661982B2 (ja) |
KR (1) | KR101516164B1 (ja) |
DE (1) | DE112008003535T5 (ja) |
TW (1) | TWI419255B (ja) |
WO (1) | WO2009084154A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102828238B (zh) * | 2012-08-24 | 2015-11-04 | 东莞市中镓半导体科技有限公司 | 用于改良外延过程中衬底晶片表面温场的方法 |
US10593521B2 (en) * | 2013-03-12 | 2020-03-17 | Applied Materials, Inc. | Substrate support for plasma etch operations |
US9799548B2 (en) * | 2013-03-15 | 2017-10-24 | Applied Materials, Inc. | Susceptors for enhanced process uniformity and reduced substrate slippage |
SG10201901915QA (en) * | 2014-09-05 | 2019-04-29 | Applied Materials Inc | Upper dome for epi chamber |
KR20170054447A (ko) * | 2014-09-05 | 2017-05-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판들의 열적 프로세싱을 위한 서셉터 및 예열 링 |
EP3275008B1 (en) * | 2015-03-25 | 2022-02-23 | Applied Materials, Inc. | Chamber components for epitaxial growth apparatus |
JP6789100B2 (ja) * | 2016-12-27 | 2020-11-25 | 昭和電工株式会社 | サセプタ、気相成長装置及び気相成長方法 |
US11702748B2 (en) * | 2017-03-03 | 2023-07-18 | Lam Research Corporation | Wafer level uniformity control in remote plasma film deposition |
JP6733802B1 (ja) * | 2019-05-28 | 2020-08-05 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法及びサセプタ |
CN113644017B (zh) * | 2020-04-27 | 2024-07-09 | 上海新昇半导体科技有限公司 | 一种对晶圆进行定位的方法和半导体制造设备 |
CN113699586B (zh) * | 2021-08-27 | 2022-07-26 | 江苏第三代半导体研究院有限公司 | 一种带空气桥结构的托盘及外延生长方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004319623A (ja) | 2003-04-14 | 2004-11-11 | Shin Etsu Handotai Co Ltd | サセプタ及び気相成長装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0758041A (ja) * | 1993-08-20 | 1995-03-03 | Toshiba Ceramics Co Ltd | サセプタ |
US7270708B2 (en) * | 2001-11-30 | 2007-09-18 | Shin-Etsu Handotai Co., Ltd. | Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer |
JP4003527B2 (ja) * | 2002-04-25 | 2007-11-07 | 信越半導体株式会社 | サセプタおよび半導体ウェーハの製造方法 |
JP3908112B2 (ja) * | 2002-07-29 | 2007-04-25 | Sumco Techxiv株式会社 | サセプタ、エピタキシャルウェーハ製造装置及びエピタキシャルウェーハ製造方法 |
JP2007123803A (ja) * | 2005-09-30 | 2007-05-17 | Toshiba Ceramics Co Ltd | 半導体ウエハ支持部材及び半導体ウエハ支持部材の評価方法 |
US8021484B2 (en) * | 2006-03-30 | 2011-09-20 | Sumco Techxiv Corporation | Method of manufacturing epitaxial silicon wafer and apparatus therefor |
US20080314319A1 (en) * | 2007-06-19 | 2008-12-25 | Memc Electronic Materials, Inc. | Susceptor for improving throughput and reducing wafer damage |
-
2008
- 2008-12-05 DE DE112008003535T patent/DE112008003535T5/de not_active Ceased
- 2008-12-05 US US12/746,021 patent/US20110073037A1/en not_active Abandoned
- 2008-12-05 KR KR1020107013934A patent/KR101516164B1/ko active IP Right Grant
- 2008-12-05 JP JP2009547876A patent/JP4661982B2/ja active Active
- 2008-12-05 WO PCT/JP2008/003621 patent/WO2009084154A1/ja active Application Filing
- 2008-12-12 TW TW097148551A patent/TWI419255B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004319623A (ja) | 2003-04-14 | 2004-11-11 | Shin Etsu Handotai Co Ltd | サセプタ及び気相成長装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2009084154A1 (ja) | 2009-07-09 |
KR20100102131A (ko) | 2010-09-20 |
TW200945485A (en) | 2009-11-01 |
JP4661982B2 (ja) | 2011-03-30 |
TWI419255B (zh) | 2013-12-11 |
JPWO2009084154A1 (ja) | 2011-05-12 |
KR101516164B1 (ko) | 2015-05-04 |
US20110073037A1 (en) | 2011-03-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R012 | Request for examination validly filed | ||
R012 | Request for examination validly filed |
Effective date: 20150218 |
|
R079 | Amendment of ipc main class |
Free format text: PREVIOUS MAIN CLASS: H01L0021205000 Ipc: C30B0025120000 |
|
R016 | Response to examination communication | ||
R002 | Refusal decision in examination/registration proceedings | ||
R003 | Refusal decision now final |