DE112007001223T5 - In-situ Reinigung eines CVD-Systemablasses - Google Patents

In-situ Reinigung eines CVD-Systemablasses Download PDF

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Publication number
DE112007001223T5
DE112007001223T5 DE112007001223T DE112007001223T DE112007001223T5 DE 112007001223 T5 DE112007001223 T5 DE 112007001223T5 DE 112007001223 T DE112007001223 T DE 112007001223T DE 112007001223 T DE112007001223 T DE 112007001223T DE 112007001223 T5 DE112007001223 T5 DE 112007001223T5
Authority
DE
Germany
Prior art keywords
chamber
drain line
formation
polymers
cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112007001223T
Other languages
German (de)
English (en)
Inventor
David K. San Jose Carlson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE112007001223T5 publication Critical patent/DE112007001223T5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6504—In-situ cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
DE112007001223T 2006-05-16 2007-05-15 In-situ Reinigung eines CVD-Systemablasses Withdrawn DE112007001223T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/435,065 2006-05-16
US11/435,065 US20070267143A1 (en) 2006-05-16 2006-05-16 In situ cleaning of CVD system exhaust
PCT/US2007/068948 WO2007137035A2 (en) 2006-05-16 2007-05-15 In situ cleaning of cvd system exhaust

Publications (1)

Publication Number Publication Date
DE112007001223T5 true DE112007001223T5 (de) 2009-04-23

Family

ID=38659696

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112007001223T Withdrawn DE112007001223T5 (de) 2006-05-16 2007-05-15 In-situ Reinigung eines CVD-Systemablasses

Country Status (7)

Country Link
US (2) US20070267143A1 (https=)
JP (1) JP5269770B2 (https=)
KR (1) KR101046969B1 (https=)
CN (1) CN101535525B (https=)
DE (1) DE112007001223T5 (https=)
TW (1) TWI388689B (https=)
WO (1) WO2007137035A2 (https=)

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KR101855217B1 (ko) 2010-12-30 2018-05-08 비코 인스트루먼츠 인코포레이티드 캐리어 연장부를 이용한 웨이퍼 처리
WO2012128783A1 (en) * 2011-03-22 2012-09-27 Applied Materials, Inc. Liner assembly for chemical vapor deposition chamber
CN102615068B (zh) * 2012-03-26 2015-05-20 中微半导体设备(上海)有限公司 Mocvd设备的清洁方法
US20130276702A1 (en) * 2012-04-24 2013-10-24 Applied Materials, Inc. Gas reclamation and abatement system for high volume epitaxial silicon deposition system
US9388493B2 (en) 2013-01-08 2016-07-12 Veeco Instruments Inc. Self-cleaning shutter for CVD reactor
CN105210173A (zh) * 2013-05-23 2015-12-30 应用材料公司 用于半导体处理腔室的经涂布的衬里组件
JP5605464B2 (ja) * 2013-06-25 2014-10-15 東京エレクトロン株式会社 成膜装置及びそのクリーニング方法
US11414759B2 (en) 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
CN103938177B (zh) * 2014-05-07 2015-12-30 南昌黄绿照明有限公司 可用氯气在线清洗的非钎焊mocvd喷头
KR102372893B1 (ko) 2014-12-04 2022-03-10 삼성전자주식회사 발광 소자 제조용 화학 기상 증착 장치
JP6625891B2 (ja) 2016-02-10 2019-12-25 株式会社日立ハイテクノロジーズ 真空処理装置
TWI609988B (zh) * 2016-07-21 2018-01-01 台灣積體電路製造股份有限公司 製程設備及化學氣相沉積製程
US11332824B2 (en) * 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system
JP7080140B2 (ja) * 2018-09-06 2022-06-03 東京エレクトロン株式会社 基板処理装置
CN111069192A (zh) * 2018-10-22 2020-04-28 北京北方华创微电子装备有限公司 原位清洗装置和半导体处理设备
KR102421233B1 (ko) 2020-02-03 2022-07-18 주식회사 제이엔케이 화학기상증착 장치
KR102368157B1 (ko) 2020-02-03 2022-03-02 주식회사 제이엔케이 화학기상증착 장치
KR20250155606A (ko) 2023-03-14 2025-10-30 어플라이드 머티어리얼스, 인코포레이티드 개선된 프로세스 챔버 세정

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US6042654A (en) 1998-01-13 2000-03-28 Applied Materials, Inc. Method of cleaning CVD cold-wall chamber and exhaust lines
US6194628B1 (en) 1995-09-25 2001-02-27 Applied Materials, Inc. Method and apparatus for cleaning a vacuum line in a CVD system

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US5916369A (en) 1995-06-07 1999-06-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
US6194628B1 (en) 1995-09-25 2001-02-27 Applied Materials, Inc. Method and apparatus for cleaning a vacuum line in a CVD system
US6042654A (en) 1998-01-13 2000-03-28 Applied Materials, Inc. Method of cleaning CVD cold-wall chamber and exhaust lines

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Also Published As

Publication number Publication date
US20090044699A1 (en) 2009-02-19
TW200804619A (en) 2008-01-16
CN101535525B (zh) 2012-12-19
WO2007137035A2 (en) 2007-11-29
US20070267143A1 (en) 2007-11-22
KR20090016476A (ko) 2009-02-13
WO2007137035A3 (en) 2008-12-11
JP5269770B2 (ja) 2013-08-21
TWI388689B (zh) 2013-03-11
US8343317B2 (en) 2013-01-01
KR101046969B1 (ko) 2011-07-06
JP2009537993A (ja) 2009-10-29
CN101535525A (zh) 2009-09-16

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