JP2009537993A - Cvdシステム排出のイン・シトゥー洗浄 - Google Patents
Cvdシステム排出のイン・シトゥー洗浄 Download PDFInfo
- Publication number
- JP2009537993A JP2009537993A JP2009511203A JP2009511203A JP2009537993A JP 2009537993 A JP2009537993 A JP 2009537993A JP 2009511203 A JP2009511203 A JP 2009511203A JP 2009511203 A JP2009511203 A JP 2009511203A JP 2009537993 A JP2009537993 A JP 2009537993A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- gas
- polymer
- discharge line
- cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title description 40
- 238000011065 in-situ storage Methods 0.000 title description 2
- 238000000034 method Methods 0.000 claims abstract description 62
- 229920000642 polymer Polymers 0.000 claims abstract description 49
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 50
- 238000012545 processing Methods 0.000 description 32
- 238000000151 deposition Methods 0.000 description 24
- 238000005229 chemical vapour deposition Methods 0.000 description 21
- 230000008021 deposition Effects 0.000 description 21
- 239000000463 material Substances 0.000 description 21
- 230000002265 prevention Effects 0.000 description 20
- 241000894007 species Species 0.000 description 17
- 238000009825 accumulation Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 8
- 239000006227 byproduct Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 239000013618 particulate matter Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 239000011343 solid material Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum or steel Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000010795 gaseous waste Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000002920 hazardous waste Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000002910 solid waste Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【選択図】 図1
Description
Claims (22)
- CVD反応チャンバの排出ラインにおけるポリマーの形成を防止する方法であって、
ポリマーを形成する付着物を破壊し、および/または付着物を防止して、前記排出ラインにおけるポリマー種の形成を防止するためにエネルギーを生成する下流チャンバを介して、前記CVD反応チャンバから排出されたガスを流すステップを備える、方法。 - 前記下流チャンバが低周波数RFチャンバを含む、請求項1に記載の方法。
- 前記低周波数RFチャンバが約1000℃〜1200℃の温度を生成する、請求項2に記載の方法。
- 前記低周波数RFチャンバが約10KHz未満の周波数で動作する、請求項3に記載の方法。
- 低圧プラズマを生成するステップをさらに備える、請求項3に記載の方法。
- 前記プラズマの圧力が約10トール未満である、請求項5に記載の方法。
- エッチャントを前記チャンバに導入するステップをさらに備える、請求項2に記載の方法。
- 前記エッチャントが、HClおよびCl2からなる群より選択される、請求項7に記載の方法。
- 前記下流チャンバがUV光源を含む、請求項1に記載の方法。
- 前記UV光源が約172nmの波長で動作する、請求項1に記載の方法。
- エッチャントが前記下流チャンバに導入される、請求項9に記載の方法。
- 前記エッチャントが、HClおよびCl2からなる群より選択される、請求項11に記載の方法。
- 基板サポートと、反応チャンバにガスを導入するガス分布システムとを含むCVD反応チャンバと、
前記プロセスチャンバからガスを除去するための、前記反応チャンバに接続されている排出ラインと、
前記排出ラインにおけるポリマーの形成を防止するための、前記排出ラインに結合されているデバイスと、
を備える、CVD装置。 - 前記デバイスが、約1000℃〜1200℃の温度を発生させるように適合されている熱チャンバを備える、請求項13に記載の装置。
- 前記熱チャンバが低周波数RFチャンバを備える、請求項14に記載の装置。
- 前記低周波数RFチャンバが約10KHz未満の周波数で動作する、請求項15に記載の装置。
- 前記排出ラインと連通しているエッチャントガス注入口をさらに備える、請求項14に記載の装置。
- 前記デバイスが、前記排出ラインに結合されているUV光源を備える、請求項13に記載の装置。
- 前記UV光源が172nmの波長で動作する、請求項18に記載の装置。
- 基板サポートと、反応チャンバにガスを導入するガス分布システムとを含むCVD反応チャンバと、
前記プロセスチャンバからガスを除去するための、前記反応チャンバに接続されている排出ラインと、
前記排出ラインにおけるポリマーの形成を防止する手段と、
を備える、CVD装置。 - ポリマーの形成を防止する前記手段が、約1000℃〜1200℃の温度を発生させるための加熱下流チャンバを備える、請求項20に記載の装置。
- ポリマーの形成を防止する前記手段がUV光源を備える、請求項20に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/435,065 | 2006-05-16 | ||
US11/435,065 US20070267143A1 (en) | 2006-05-16 | 2006-05-16 | In situ cleaning of CVD system exhaust |
PCT/US2007/068948 WO2007137035A2 (en) | 2006-05-16 | 2007-05-15 | In situ cleaning of cvd system exhaust |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009537993A true JP2009537993A (ja) | 2009-10-29 |
JP2009537993A5 JP2009537993A5 (ja) | 2010-05-20 |
JP5269770B2 JP5269770B2 (ja) | 2013-08-21 |
Family
ID=38659696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009511203A Expired - Fee Related JP5269770B2 (ja) | 2006-05-16 | 2007-05-15 | Cvdシステム排出のイン・シトゥー洗浄 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20070267143A1 (ja) |
JP (1) | JP5269770B2 (ja) |
KR (1) | KR101046969B1 (ja) |
CN (1) | CN101535525B (ja) |
DE (1) | DE112007001223T5 (ja) |
TW (1) | TWI388689B (ja) |
WO (1) | WO2007137035A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013229622A (ja) * | 2013-06-25 | 2013-11-07 | Tokyo Electron Ltd | 成膜装置及びそのクリーニング方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009043848A1 (de) | 2009-08-25 | 2011-03-03 | Aixtron Ag | CVD-Verfahren und CVD-Reaktor |
KR101590661B1 (ko) * | 2010-09-13 | 2016-02-01 | 도쿄엘렉트론가부시키가이샤 | 액처리 장치, 액처리 방법 및 기억 매체 |
WO2012092064A1 (en) | 2010-12-30 | 2012-07-05 | Veeco Instruments Inc. | Wafer processing with carrier extension |
CN103430285B (zh) * | 2011-03-22 | 2016-06-01 | 应用材料公司 | 用于化学气相沉积腔室的衬里组件 |
CN102615068B (zh) * | 2012-03-26 | 2015-05-20 | 中微半导体设备(上海)有限公司 | Mocvd设备的清洁方法 |
US20130276702A1 (en) * | 2012-04-24 | 2013-10-24 | Applied Materials, Inc. | Gas reclamation and abatement system for high volume epitaxial silicon deposition system |
US9388493B2 (en) | 2013-01-08 | 2016-07-12 | Veeco Instruments Inc. | Self-cleaning shutter for CVD reactor |
WO2014189622A1 (en) * | 2013-05-23 | 2014-11-27 | Applied Materials, Inc. | A coated liner assembly for a semiconductor processing chamber |
US11414759B2 (en) * | 2013-11-29 | 2022-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Mechanisms for supplying process gas into wafer process apparatus |
CN103938177B (zh) * | 2014-05-07 | 2015-12-30 | 南昌黄绿照明有限公司 | 可用氯气在线清洗的非钎焊mocvd喷头 |
KR102372893B1 (ko) | 2014-12-04 | 2022-03-10 | 삼성전자주식회사 | 발광 소자 제조용 화학 기상 증착 장치 |
JP6625891B2 (ja) | 2016-02-10 | 2019-12-25 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
TWI609988B (zh) * | 2016-07-21 | 2018-01-01 | 台灣積體電路製造股份有限公司 | 製程設備及化學氣相沉積製程 |
US11332824B2 (en) * | 2016-09-13 | 2022-05-17 | Lam Research Corporation | Systems and methods for reducing effluent build-up in a pumping exhaust system |
JP7080140B2 (ja) * | 2018-09-06 | 2022-06-03 | 東京エレクトロン株式会社 | 基板処理装置 |
CN111069192A (zh) * | 2018-10-22 | 2020-04-28 | 北京北方华创微电子装备有限公司 | 原位清洗装置和半导体处理设备 |
KR102421233B1 (ko) | 2020-02-03 | 2022-07-18 | 주식회사 제이엔케이 | 화학기상증착 장치 |
KR102368157B1 (ko) | 2020-02-03 | 2022-03-02 | 주식회사 제이엔케이 | 화학기상증착 장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09181063A (ja) * | 1995-09-25 | 1997-07-11 | Applied Materials Inc | Cvdシステムの真空ラインのクリーニング方法及び装置 |
JP2000317265A (ja) * | 1999-04-30 | 2000-11-21 | Applied Materials Inc | 排ガス処理装置及び基板処理装置 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4263873A (en) * | 1979-03-19 | 1981-04-28 | George Christianson | Animal litter and method of preparation |
US4263872A (en) * | 1980-01-31 | 1981-04-28 | Rca Corporation | Radiation heated reactor for chemical vapor deposition on substrates |
JPS60114570A (ja) * | 1983-11-25 | 1985-06-21 | Canon Inc | プラズマcvd装置の排気系 |
US4960488A (en) * | 1986-12-19 | 1990-10-02 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
US5158644A (en) * | 1986-12-19 | 1992-10-27 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
US5451378A (en) * | 1991-02-21 | 1995-09-19 | The United States Of America As Represented By The Secretary Of The Navy | Photon controlled decomposition of nonhydrolyzable ambients |
FR2686347B1 (fr) * | 1992-01-22 | 1994-10-07 | Lorraine Carbone | Procede de pyrolyse d'effluents fluides et dispositif correspondant. |
US5916369A (en) | 1995-06-07 | 1999-06-29 | Applied Materials, Inc. | Gas inlets for wafer processing chamber |
US5454903A (en) * | 1993-10-29 | 1995-10-03 | Applied Materials, Inc. | Plasma cleaning of a CVD or etch reactor using helium for plasma stabilization |
RU95106478A (ru) * | 1994-04-29 | 1997-01-20 | Моторола | Устройство и способ для разложения химических соединений |
US5855677A (en) * | 1994-09-30 | 1999-01-05 | Applied Materials, Inc. | Method and apparatus for controlling the temperature of reaction chamber walls |
US5811022A (en) * | 1994-11-15 | 1998-09-22 | Mattson Technology, Inc. | Inductive plasma reactor |
US6045618A (en) * | 1995-09-25 | 2000-04-04 | Applied Materials, Inc. | Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment |
US6187072B1 (en) * | 1995-09-25 | 2001-02-13 | Applied Materials, Inc. | Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions |
US5963833A (en) * | 1996-07-03 | 1999-10-05 | Micron Technology, Inc. | Method for cleaning semiconductor wafers and |
US5788778A (en) * | 1996-09-16 | 1998-08-04 | Applied Komatsu Technology, Inc. | Deposition chamber cleaning technique using a high power remote excitation source |
US5827370A (en) * | 1997-01-13 | 1998-10-27 | Mks Instruments, Inc. | Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace |
US5743581A (en) * | 1997-03-18 | 1998-04-28 | Applied Materials Incorporated | Semiconductor process chamber exhaust port quartz removal tool |
US6153260A (en) * | 1997-04-11 | 2000-11-28 | Applied Materials, Inc. | Method for heating exhaust gas in a substrate reactor |
US6815633B1 (en) * | 1997-06-26 | 2004-11-09 | Applied Science & Technology, Inc. | Inductively-coupled toroidal plasma source |
JP3500050B2 (ja) * | 1997-09-08 | 2004-02-23 | 東京エレクトロン株式会社 | 不純物除去装置、膜形成方法及び膜形成システム |
US6042654A (en) | 1998-01-13 | 2000-03-28 | Applied Materials, Inc. | Method of cleaning CVD cold-wall chamber and exhaust lines |
US6098637A (en) * | 1998-03-03 | 2000-08-08 | Applied Materials, Inc. | In situ cleaning of the surface inside a vacuum processing chamber |
US20030164225A1 (en) * | 1998-04-20 | 2003-09-04 | Tadashi Sawayama | Processing apparatus, exhaust processing process and plasma processing |
US6368567B2 (en) * | 1998-10-07 | 2002-04-09 | Applied Materials, Inc. | Point-of-use exhaust by-product reactor |
KR100613674B1 (ko) * | 1999-05-14 | 2006-08-21 | 동경 엘렉트론 주식회사 | 웨이퍼 처리 장치 및 처리 방법 |
US6255222B1 (en) * | 1999-08-24 | 2001-07-03 | Applied Materials, Inc. | Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process |
US6572924B1 (en) * | 1999-11-18 | 2003-06-03 | Asm America, Inc. | Exhaust system for vapor deposition reactor and method of using the same |
US6596123B1 (en) * | 2000-01-28 | 2003-07-22 | Applied Materials, Inc. | Method and apparatus for cleaning a semiconductor wafer processing system |
EP1297891B9 (en) * | 2000-05-29 | 2008-07-23 | ADTEC Plasma Technology Co., Ltd. | Apparatus for processing gases by plasma |
WO2002000962A1 (en) * | 2000-06-28 | 2002-01-03 | Mks Instruments, Inc. | System and method for in-situ cleaning of process monitor of semi-conductor wafer fabricator |
US6843258B2 (en) * | 2000-12-19 | 2005-01-18 | Applied Materials, Inc. | On-site cleaning gas generation for process chamber cleaning |
US7084832B2 (en) * | 2001-10-09 | 2006-08-01 | Plasma Control Systems, Llc | Plasma production device and method and RF driver circuit with adjustable duty cycle |
US6902629B2 (en) * | 2002-04-12 | 2005-06-07 | Applied Materials, Inc. | Method for cleaning a process chamber |
US6923189B2 (en) * | 2003-01-16 | 2005-08-02 | Applied Materials, Inc. | Cleaning of CVD chambers using remote source with cxfyoz based chemistry |
KR100505670B1 (ko) * | 2003-02-05 | 2005-08-03 | 삼성전자주식회사 | 부산물 제거용 고온 유체 공급 장치를 구비한 반도체 소자제조 장치 |
US6872909B2 (en) * | 2003-04-16 | 2005-03-29 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel |
US7969096B2 (en) * | 2006-12-15 | 2011-06-28 | Mks Instruments, Inc. | Inductively-coupled plasma source |
-
2006
- 2006-05-16 US US11/435,065 patent/US20070267143A1/en not_active Abandoned
-
2007
- 2007-05-10 TW TW096116708A patent/TWI388689B/zh not_active IP Right Cessation
- 2007-05-15 KR KR1020087030343A patent/KR101046969B1/ko not_active IP Right Cessation
- 2007-05-15 CN CN2007800159887A patent/CN101535525B/zh not_active Expired - Fee Related
- 2007-05-15 JP JP2009511203A patent/JP5269770B2/ja not_active Expired - Fee Related
- 2007-05-15 WO PCT/US2007/068948 patent/WO2007137035A2/en active Application Filing
- 2007-05-15 DE DE112007001223T patent/DE112007001223T5/de not_active Withdrawn
-
2008
- 2008-10-02 US US12/244,318 patent/US8343317B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09181063A (ja) * | 1995-09-25 | 1997-07-11 | Applied Materials Inc | Cvdシステムの真空ラインのクリーニング方法及び装置 |
JP2000317265A (ja) * | 1999-04-30 | 2000-11-21 | Applied Materials Inc | 排ガス処理装置及び基板処理装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013229622A (ja) * | 2013-06-25 | 2013-11-07 | Tokyo Electron Ltd | 成膜装置及びそのクリーニング方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI388689B (zh) | 2013-03-11 |
TW200804619A (en) | 2008-01-16 |
US20070267143A1 (en) | 2007-11-22 |
WO2007137035A2 (en) | 2007-11-29 |
JP5269770B2 (ja) | 2013-08-21 |
US20090044699A1 (en) | 2009-02-19 |
WO2007137035A3 (en) | 2008-12-11 |
CN101535525A (zh) | 2009-09-16 |
KR20090016476A (ko) | 2009-02-13 |
KR101046969B1 (ko) | 2011-07-06 |
US8343317B2 (en) | 2013-01-01 |
DE112007001223T5 (de) | 2009-04-23 |
CN101535525B (zh) | 2012-12-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5269770B2 (ja) | Cvdシステム排出のイン・シトゥー洗浄 | |
JP3897382B2 (ja) | Cvdシステムの真空ラインのクリーニング方法及び装置 | |
EP0839929B1 (en) | Method and apparatus for minimizing deposition in an exhaust line | |
KR100495783B1 (ko) | 기판처리장치의인-시튜진공라인을세척하기위한평행판장치 | |
KR100767762B1 (ko) | 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치 | |
KR100271694B1 (ko) | 기판 처리 장치로부터의 과플루오르 화합물 가스 방출을 감소시키기 위한 방법 및 장치 | |
JP4916119B2 (ja) | リモートプラズマ源清浄技術を用いた窒化ケイ素堆積中の白色粉末低減用の装置 | |
KR100696030B1 (ko) | 실리콘-산소-탄소 증착 프로세스의 기판 처리 챔버 배출 라인으로부터 잔류물을 제거하기 위한 방법 | |
JP2006121073A (ja) | 終点検出器及び粒子モニタ | |
JPH1171680A (ja) | 基板処理装置と共に用いるための改良型遠隔マイクロ波プラズマソース用装置 | |
US6564810B1 (en) | Cleaning of semiconductor processing chambers | |
TW536739B (en) | Apparatus for exhaust white powder elimination in substrate processing | |
US20080124670A1 (en) | Inductively heated trap |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100331 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100331 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101007 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20101130 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101210 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120508 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120808 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20120925 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130430 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130508 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |